onsemi MJD47T4

Overview

MJD47T4 from onsemi is an NPN silicon power transistor in DPAK (Case 369C) package, rated for 250 V_CEO, 1 A continuous collector current, and 15 W power dissipation at T_C = 25°C. It serves as a high-voltage switching element in line-operated audio output amplifiers, switch-mode power supply drivers, and industrial motor control circuits.

For engineers reviewing the MJD47T4 datasheet, pinout, applications, or equivalent options, key selection criteria include its 250 V_CEO rating, 1 A I_C capability, 8.33°C/W R_θJC, AEC-Q101 qualification (NJV prefix variant), and compatibility with surface-mount thermal pad layouts per minimum footprint recommendations.

Technical Context

This device operates as a medium-power, high-voltage NPN bipolar junction transistor optimized for linear and switching applications where robust voltage blocking and controlled saturation behavior are required. Its DC current gain (h_FE) ranges from 30 to 150 at I_C = 0.3 A and V_CE = 10 V, with V_CE(sat) ≤ 1 V at I_C = 1 A and I_B = 0.2 A.

Thermal performance is defined by R_θJC = 8.33°C/W and R_θJA = 80°C/W (on minimum recommended PCB pads), supporting operation across −65°C to +150°C junction temperature range. It meets UL 94 V−0 flammability standard and is Pb-free/RoHS compliant.

Key Specifications

Pinout & Package

DPAK-3 (Case 369C) surface-mount package with exposed collector tab (pins 2 and 4 electrically common), 6.10 mm × 6.54 mm footprint, 2.28 mm height, and 2.29 mm lead pitch. Designed for thermal pad soldering to PCB copper areas per datasheet-recommended minimum pad dimensions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage power transistor applications.

Compared with MJD47G and TIP47, the MJD47T4 offers tape-and-reel compatibility for automated assembly and matches the NJV variant's AEC-Q101 qualification-making it the optimal choice for volume automotive and industrial SMT production where reliability and process integration are critical.

Availability

MJD47T4 is available at Aetrix Electronics and suitable for switch-mode power supply drivers, audio output amplifiers, and industrial motor control applications requiring stable component supply, long-term lifecycle assurance, and automotive-grade traceability.

Supply support for MJD47T4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and logic solutions for automotive, industrial, and cloud infrastructure markets.

The MJD47T4 belongs to onsemi's high-voltage power transistor family designed specifically for ruggedized switching and linear amplification in line-operated equipment-emphasizing thermal robustness, voltage endurance, and manufacturability in surface-mount formats.

FAQ

What is the maximum collector-emitter voltage rating for the MJD47T4?

The MJD47T4 has a maximum collector-emitter sustaining voltage (V_CEO(sus)) of 250 Vdc under specified test conditions (I_C = 30 mA, I_B = 0). This rating ensures safe operation in high-voltage switching applications such as flyback power supplies and audio output stages where transient overvoltage must be contained without breakdown.

Is the MJD47T4 suitable for automotive applications?

The MJD47T4 itself is not AEC-Q101 qualified; however, its NJV-prefixed variant NJVMJD47T4G is explicitly certified to AEC-Q101 and PPAP capable. For automotive use, engineers must specify NJVMJD47T4G-not MJD47T4-to ensure compliance with automotive reliability and change-control requirements.

What package type does the MJD47T4 use, and how is thermal management addressed?

The MJD47T4 uses the DPAK-3 (Case 369C) surface-mount package with pins 2 and 4 connected to the collector and an exposed metal tab for thermal conduction. Its R_θJC is 8.33°C/W, enabling effective heat transfer to a PCB copper pour or heatsink when mounted per datasheet-recommended minimum pad dimensions.

How does the MJD47T4 compare to the TIP47 in terms of form factor and performance?

The MJD47T4 and TIP47 share identical electrical specifications (250 V_CEO, 1 A I_C, 15 W P_D), but differ critically in package: MJD47T4 uses DPAK for surface-mount assembly and lower R_θJA (80°C/W on min pads), while TIP47 uses TO-220 requiring through-hole mounting and mechanical heatsinking. MJD47T4 supports higher-density layouts and automated manufacturing.

What is the DC current gain range of the MJD47T4, and how does it affect base drive design?

The MJD47T4 exhibits h_FE from 30 to 150 at I_C = 0.3 A and V_CE = 10 V. This wide gain spread means base drive must be designed for worst-case h_FE = 30 to guarantee saturation at full 1 A load-requiring ≥333 mA base current (I_B = I_C/30), though typical designs use I_B = 200–300 mA for margin and thermal stability.