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onsemi MJD47TF
, SC-63.JPG)
- Part No.:
- MJD47TF
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
MJD47TF.pdf
- Description:
- TRANS NPN 250V 1A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,455
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Product details
Overview
MJD47TF from ON Semiconductor is a high-voltage NPN epitaxial silicon power transistor in TO-252 (DPAK) package, rated for 350 V collector-base voltage, 250 V collector-emitter voltage, and 1 A DC collector current. It delivers 15 W power dissipation at case temperature of 25°C and exhibits DC current gain (hFE) of 30–150 at IC = 0.3 A, serving as a robust switching element in offline AC-DC power supplies and motor control circuits.
For engineers reviewing the MJD47TF datasheet, pinout, applications, or equivalent options, key selection criteria include its 250 V VCEO rating, 1 V VCE(sat) at IC = 1 A/IB = 0.2 A, 10 MHz fT bandwidth, TO-252 thermal performance, and compatibility with TIP47-based designs requiring surface-mount reliability.
Technical Context
The MJD47TF operates as a medium-power NPN bipolar junction transistor optimized for linear and switching applications up to 250 V VCEO and 1 A continuous collector current. Its epitaxial base structure supports stable hFE across operating range, while the DPAK package enables efficient thermal transfer to PCB copper areas.
Electrical behavior is defined by VBE(on) = 1.5 V at IC = 1 A, VCE(sat) = 1 V under same conditions, and ICEO ≤ 0.2 mA at VCE = 150 V - confirming low leakage and predictable saturation characteristics suitable for flyback switch and relay driver topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCBO | 350 V - maximum reverse bias voltage the collector-base junction withstands before breakdown; defines safe operation in high-side switching with inductive loads. |
| VCEO | 250 V - maximum collector-emitter voltage under open-base condition; sets upper limit for DC bus voltage in offline SMPS primary-side switches. |
| IC (DC) | 1 A - continuous collector current rating at TC = 25°C; determines usable load current in constant-current drivers and linear regulators. |
| PC | 15.0 W - maximum power dissipation at case temperature of 25°C; requires ≥ 25 cm² 2-oz copper pad for thermal management in full-load operation. |
| hFE | 30–150 - DC current gain at VCE = 10 V, IC = 0.3 A; enables base drive design with IB = 2–3.3 mA for 1 A collector output. |
| fT | 10 MHz - current-gain bandwidth product at VCE = 10 V, IC = 0.2 A; supports switching frequencies up to ~500 kHz with acceptable gain margin. |
| VCE(sat) | 1 V - collector-emitter saturation voltage at IC = 1 A, IB = 0.2 A; yields 1 W conduction loss at full current, critical for efficiency in PWM-driven stages. |
Pinout & Package
Package: TO-252-3L (DPAK), surface-mount, single-ended heat sink tab (pin 2), JEDEC-compliant outline per drawing TO252D03.pdf. Thermal resistance θJC = 2.0°C/W typical.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Left) | Base | Current-controlled input node; requires ≥ 200 mA peak base drive for full saturation at 1 A collector current. |
| 2 (Center Tab) | Collector | Main power terminal and thermal path; electrically connected to exposed metal tab; must be isolated from heatsink unless common collector configuration used. |
| 3 (Right) | Emitter | Reference node for base-emitter bias; connects to ground or low-side return path; carries full load current in common-emitter topology. |
Key Features
| Feature | Design Value |
|---|---|
| High-Voltage Capability | 350 V VCBO and 250 V VCEO enable direct use in 230 VAC rectified bus applications without series stacking. |
| DPAK Surface-Mount Package | TO-252 footprint provides 2× thermal performance vs. TO-92 and supports automated assembly with standard reflow profiles. |
| Electrically Similar to TIP47 | Matches TIP47's voltage/current ratings and gain range, allowing drop-in replacement in legacy through-hole designs adapted for SMT. |
| Low Saturation Voltage | VCE(sat) = 1 V at IC = 1 A reduces conduction loss to 1 W, improving thermal headroom in compact power stages. |
Applications
| Switched-Mode Power Supply (SMPS) Primary Switch | DC Motor Speed Controller |
|---|---|
Use Scenario: Used as main switching transistor in 20–50 W offline flyback converters with universal AC input. IC Role / Device Role / Timing Role: NPN power switch controlled by PWM controller via base resistor network; handles 250 V DC bus and 1 A peak primary current. Use Value: 250 V VCEO and 15 W power dissipation allow reliable operation without snubber complexity in low-cost AC-DC adapters. |
Use Scenario: Drives brushed DC motors in industrial actuators and HVAC dampers with 24–48 V supply rails. IC Role / Device Role / Timing Role: Low-side switch in H-bridge half-bridge stage; commutates motor current with <1 μs turn-on time at IC = 1 A. Use Value: 10 MHz fT and 1 V VCE(sat) support efficient PWM control up to 20 kHz while minimizing I²R losses. |
| Relay Driver Circuit | High-Voltage Linear Regulator Pass Element |
Use Scenario: Interfaces microcontroller GPIO to 12–24 V coil relays in PLC I/O modules and building automation panels. IC Role / Device Role / Timing Role: Saturated NPN switch providing >100 mA coil current with TTL/CMOS-compatible base drive. Use Value: hFE ≥ 30 ensures reliable turn-on with ≤ 3.3 mA base current, reducing MCU port loading and enabling direct GPIO control. |
Use Scenario: Functions as pass transistor in 12–24 V, 500 mA linear regulators for analog sensor front-ends and precision reference supplies. IC Role / Device Role / Timing Role: Series pass element biased in active region; dissipates up to 12 W under worst-case dropout conditions. Use Value: 150°C max junction temperature and 15 W PC rating support stable operation with minimal heatsinking in space-constrained enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STMicroelectronics BUJ302A | Higher VCEO = 300 V, lower hFE = 20–80, TO-220 package | Requires through-hole mounting and larger heatsink; better suited for higher-voltage industrial controls | Select when >250 V VCEO margin is needed and board space allows TO-220 footprint |
| ON Semiconductor MJD44H11G | Same TO-252 package, VCEO = 80 V, hFE = 40–120, lower voltage rating | Optimized for low-voltage DC-DC conversion and automotive 12 V systems | Choose for 12–48 V applications where lower VCEO is acceptable and tighter hFE tolerance is preferred |
Compared with BUJ302A and MJD44H11G, the MJD47TF uniquely balances 250 V capability, DPAK mountability, and 1 A current handling-making it optimal for cost-sensitive, space-constrained 230 VAC-derived power stages where TIP47 compatibility matters.
Availability
MJD47TF is available at Aetrix Electronics and suitable for offline AC-DC power supplies, brushed DC motor controllers, and industrial relay driver circuits requiring stable component supply and long-term manufacturability.
Supply support for MJD47TF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The MJD47TF belongs to ON Semiconductor's legacy power bipolar transistor portfolio, originally developed by Fairchild Semiconductor to deliver rugged, high-voltage switching performance in surface-mount form factors for cost-sensitive power conversion.
FAQ
What is the maximum junction temperature rating for the MJD47TF?
The MJD47TF has a maximum junction temperature (TJ) of 150°C, as specified in its Absolute Maximum Ratings table. This rating defines the upper thermal limit for reliable semiconductor operation. To maintain this limit in practice, the device must be mounted on a PCB with adequate copper area (≥25 cm² 2-oz copper recommended) to keep case temperature within specification. Exceeding 150°C risks permanent degradation of hFE, increased leakage, and eventual failure. The MJD47TF datasheet confirms this value applies across its full operating range.
Is the MJD47TF pin-compatible with the TIP47 through-hole transistor?
No, the MJD47TF is not pin-compatible with the TIP47 due to differing packages: MJD47TF uses TO-252 (DPAK) with pins arranged Base–Collector–Emitter, while TIP47 uses TO-220 with Collector–Base–Emitter pinout. However, the MJD47TF is electrically similar - matching VCEO, IC, hFE, and VCE(sat) - enabling functional replacement in redesigned layouts. A new PCB footprint and thermal pad layout are required for MJD47TF integration.
What is the typical DC current gain (hFE) of the MJD47TF at 1 A collector current?
At VCE = 10 V and IC = 1 A, the MJD47TF exhibits a minimum hFE of 10, with no typical or maximum value guaranteed at that operating point. The datasheet specifies hFE = 30–150 only at IC = 0.3 A. Designers should size base drive for worst-case hFE = 10 at full load to ensure saturation, requiring ≥100 mA base current for 1 A collector output. This reflects the device's gain compression at high current density.
Can the MJD47TF be used in avalanche mode?
No, the MJD47TF is not rated or characterized for repetitive avalanche operation. Its Safe Operating Area (SOA) curve in the datasheet shows only forward-biased second breakdown limits, with no avalanche energy (EAS) rating provided. While the 350 V VCBO rating indicates junction robustness, intentional use in unclamped inductive switching - where collector voltage exceeds VCEO - risks irreversible damage. External clamping (e.g., RCD snubber or TVS) is mandatory for inductive load switching.
What is the thermal resistance from junction to case (θJC) for the MJD47TF?
The MJD47TF has a typical junction-to-case thermal resistance (θJC) of 2.0°C/W, as derived from its 15.0 W power dissipation rating at TC = 25°C and maximum TJ = 150°C. This value assumes proper soldering to a 2-oz copper thermal pad per JEDEC TO-252 standards. Actual θJC may increase by 15–25% with suboptimal PCB layout or insufficient solder coverage. No maximum θJC is specified, so thermal design must target the typical value with safety margin.
MJD47TF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 250 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 200mA, 1A
- Current - Collector Cutoff (Max):
- 200µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 300mA, 10V
- Power - Max:
- 1.56 W
- Frequency - Transition:
- 10MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DPAK
MJD47TF FAQ
1.How can I place an order for MJD47TF through Aetrix?
Please submit a Request for Quotation (RFQ) for MJD47TF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MJD47TF reliable?
The price and inventory of MJD47TF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJD47TF is usually 5 days.
3.What payment methods are accepted for MJD47TF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJD47TF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MJD47TF?
MJD47TF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MJD47TF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MJD47TF?
For technical support, including MJD47TF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJD47TF requirements.
6.How does Aetrix verify that MJD47TF is sourced from the original manufacturer or authorized distributors?
All MJD47TF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJD47TF meets industry standards.
7.What is the process for return or replacement of MJD47TF?
All MJD47TF units undergo pre-shipment inspection (PSI). If there is an issue with MJD47TF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MJD47TF part is unused and in its original packaging.
Return procedure for MJD47TF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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