onsemi MJE13003

Overview

MJE13003 from onsemi is an NPN silicon power transistor designed for high-voltage, high-speed switching in inductive circuits-specifically 115 V and 220 V SWITCHMODE applications including switching regulators, motor controls, solenoid/relay drivers, and deflection circuits. It delivers 700 V blocking capability, 1.5 A continuous collector current, 40 W power dissipation at TC = 25°C, and a typical crossover time (tc) of 290 ns at IC = 1 A, TC = 100°C.

For engineers reviewing the MJE13003 datasheet, pinout, applications, or equivalent options, key selection criteria include its reverse-biased SOA performance with inductive loads at TC = 100°C, clamped inductive switching matrix (0.5–1.5 A), VCE(sus) = 400 Vdc, and thermal resistance RJC = 3.12°C/W-critical for high-reliability power conversion designs.

Technical Context

The MJE13003 operates as a high-voltage NPN bipolar junction transistor optimized for fast turn-off in inductive switching topologies. Its design emphasizes controlled fall time and robust reverse-bias safe operating area (RBSOA), validated under clamped conditions up to 300 Vdc with IC = 1 A and TC = 100°C.

It supports resistive switching with td ≤ 0.1 µs, tr ≤ 1 µs, ts ≤ 4 µs, and tf ≤ 0.7 µs at VCC = 125 Vdc and IC = 1 A, while inductive switching yields tc = 0.29–0.75 µs and tsv = 1.7–4 µs-parameters guaranteed at elevated junction temperature, distinguishing it from general-purpose transistors.

Key Specifications

Pinout & Package

Package: TO-225 (Case 77, Style 3), through-hole, 3-pin, epoxy-encapsulated with metal tab connected to collector. Dimensions: D = 10.6–11.1 mm, E = 7.4–7.8 mm, L = 14.5–16.63 mm. Mounting requires mechanical torque control per onsemi specification to maintain R_JC integrity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching transistor applications.

Compared with MJE13005 and BU2508AX, the MJE13003 uniquely balances 700 V blocking, 290 ns crossover time at 100°C, and validated reverse-biased SOA-making it the preferred choice for thermally constrained, medium-power SMPS where switching loss and reliability under inductive stress are prioritized over raw current rating.

Availability

MJE13003 is available at Aetrix Electronics and suitable for switching regulators, motor controls, inverters, and deflection circuits requiring stable component supply, long-term manufacturability, and RoHS-compliant through-hole power transistors.

Supply support for MJE13003 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, medical, and IoT applications.

The MJE13003 belongs to the SWITCHMODE™ Series of high-voltage bipolar transistors engineered specifically for high-reliability, high-efficiency inductive switching in offline power conversion-emphasizing RBSOA integrity, thermal robustness, and consistent dynamic performance across temperature.

FAQ

What is the maximum collector-emitter voltage rating for the MJE13003?

The MJE13003 has a V_CEV rating of 700 Vdc-the maximum clamped collector-emitter voltage under reverse-biased turn-off conditions. Its V_CEO(sus) is 400 Vdc at I_C = 10 mA and I_B = 0, which defines its sustainable blocking capability in forward-biased operation. These ratings are validated per onsemi's Figure 12 RBSOA and Figure 11 SOA curves.

Does the MJE13003 support operation at elevated temperatures?

Yes, the MJE13003 is characterized and guaranteed for inductive switching performance-including crossover time (t_c) and voltage storage time (t_sv)-at case temperatures up to 100°C. Its operating junction temperature range is –65°C to +150°C, and thermal resistance R_JC = 3.12°C/W enables accurate junction temperature prediction in real-world heatsink-mounted applications.

What is the pin configuration of the MJE13003 in the TO-225 package?

The MJE13003 uses TO-225 package Style 3: Pin 1 is Base, Pins 2 and 4 are Collector (internally connected to the metal tab), and Pin 3 is Emitter. This configuration is confirmed in the official onsemi mechanical drawing CASE 77–09 and marking diagram on page 1 of the MJE13003/D datasheet.

How does the MJE13003 handle inductive load switching?

The MJE13003 is explicitly designed for inductive switching with documented Reverse Bias Safe Operating Area (RBSOA) up to 300 Vdc and 1.5 A at T_C = 100°C. Its clamped inductive switching parameters-including t_c, t_sv, and t_fi-are measured using the test circuit in Figure 13 and Table 1, ensuring predictable behavior in flyback, forward, and deflection topologies without avalanche stress.

Is the MJE13003 available in a lead-free version?

Yes, the MJE13003G is the Pb-free variant of the MJE13003, packaged in the same TO-225 outline and qualified to JEDEC J-STD-020 moisture sensitivity level 1. The "G" suffix denotes RoHS-compliant termination finish and is fully compatible with both SnPb and lead-free soldering processes per onsemi's SOLDERING AND MOUNTING TECHNIQUES REFERENCE MANUAL.