onsemi MJE13003G

Overview

MJE13003G from onsemi is an NPN silicon power transistor designed for high-voltage, high-speed switching in inductive circuits-specifically 115 V and 220 V SWITCHMODE applications. It delivers 1.5 A continuous collector current, supports 700 V collector-emitter clamping voltage (VCEV), achieves 290 ns typical crossover time (tc) at TC = 100°C, and features TO-225 package with base-collector-emitter pinout. It is used in switching regulators, motor controls, and deflection circuits where fast fall time and reverse-biased SOA are critical.

For engineers reviewing the MJE13003G datasheet, pinout, applications, or equivalent options, key selection criteria include its 700 V blocking capability, 40 W power dissipation at TC = 25°C, guaranteed inductive switching performance at 100°C, Pb-free TO-225 packaging, and suitability for clamped inductive loads in SMPS and relay drivers.

Technical Context

This device operates as a high-voltage NPN switch optimized for inductive load switching where simultaneous high voltage and current during turn-off demand robust reverse-biased safe operating area (RBSOA) compliance. Its design emphasizes low crossover time (tc) and controlled fall time (tfi) under clamped conditions, with guaranteed tc ≤ 0.75 µs at IC = 1 A and TC = 100°C.

The MJE13003G uses a rugged silicon die structure rated for TJ = –65°C to +150°C, with thermal resistance RJC = 3.12°C/W enabling efficient heat transfer to the case. It exhibits hFE = 5–25 at IC = 1 A, VCE = 2 V, and VCE(sat) ≤ 1.0 V at IC = 1 A, IB = 0.25 A-supporting reliable saturation in hard-switched topologies.

Key Specifications

Pinout & Package

Package: TO-225 (Case 77, Style 3), Pb-free, through-hole, with integral metal tab acting as collector terminal. Mounting requires mechanical fixation and thermal interface to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power switching applications.

Compared with MJE13003 and BU2508DX, the MJE13003G offers verified 100°C inductive switching performance in a Pb-free TO-225 package-making it optimal for cost-sensitive, thermally constrained, RoHS-compliant SMPS and motor drive designs where pin compatibility and proven RBSOA are essential.

Availability

MJE13003G is available at Aetrix Electronics and suitable for switching regulators, motor controls, and deflection circuits requiring stable component supply, long-term manufacturability, and RoHS-compliant power switching solutions.

Supply support for MJE13003G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MJE13003G belongs to the SWITCHMODE™ Series of high-voltage bipolar transistors engineered specifically for reliable, high-speed inductive switching in offline power supplies and electromagnetic actuator drivers.

FAQ

What is the maximum collector-emitter clamping voltage (VCEV) rating for the MJE13003G?

The MJE13003G has a guaranteed VCEV rating of 700 Vdc. This parameter defines the maximum voltage the device can sustain across collector and emitter while conducting current under reverse-biased base conditions-critical for clamped inductive switching applications like SMPS and relay drivers. The rating is validated per Figure 12 (RBSOA) in the official datasheet and applies at TC = 25°C with appropriate base reverse bias.

Does the MJE13003G support operation at elevated case temperatures?

Yes, the MJE13003G is characterized for inductive switching performance up to TC = 100°C, with guaranteed crossover time (tc) ≤ 0.75 µs and voltage storage time (tsv) ≤ 4 µs. Its operating junction temperature range is –65°C to +150°C, and thermal resistance RJC = 3.12°C/W allows effective heatsinking. Derating of PD begins above 25°C at 320 mW/°C for case-mounted operation.

What is the pin configuration of the MJE13003G in its TO-225 package?

The MJE13003G uses TO-225 package (Case 77, Style 3) with pin 1 = Base, pins 2 and 4 = Collector (commoned via metal tab), and pin 3 = Emitter. This configuration is explicitly shown in the marking diagram and mechanical outline drawing. The collector is internally connected to the metal tab, which must be electrically isolated and thermally coupled to the heatsink in circuit layout.

How does the MJE13003G differ from the non-Pb-free MJE13003?

The MJE13003G is the Pb-free variant of the MJE13003, sharing identical electrical specifications, thermal characteristics, and mechanical dimensions. The sole difference is the termination plating: MJE13003G complies with RoHS Directive 2011/65/EU and supports lead-free soldering up to 275°C for 5 seconds. Both parts use the same TO-225 package and have identical switching, SOA, and DC performance.

Can the MJE13003G replace a MOSFET in high-voltage switching applications?

The MJE13003G is not a drop-in MOSFET replacement due to fundamental differences in drive architecture: it requires sustained base current (up to 0.75 A continuous) versus voltage-driven gate control. While it delivers comparable 700 V blocking and fast switching in inductive loads, its lower input impedance, higher drive loss, and need for active base turn-off limit efficiency in high-frequency (>100 kHz) applications. Use MJE13003G where bipolar advantages-like ruggedness, SOA margin, and cost-outweigh gate-drive complexity.