onsemi MJE13007

Overview

MJE13007 from onsemi is an NPN bipolar power transistor designed for high-voltage, high-speed switching in inductive circuits-specifically optimized for fall time criticality in 115 V and 220 V switch-mode applications including switching regulators, inverters, motor controls, solenoid/relay drivers, and CRT deflection circuits. It delivers 8.0 A continuous collector current, 400 V collector-emitter sustaining voltage, and 80 W total device dissipation at TC = 25 °C.

For engineers reviewing the MJE13007 datasheet, pinout, applications, or equivalent options, key selection criteria include clamped inductive SOA compliance, reverse-biased turn-off performance (tsv ≤ 2.0 µs at 100 °C), VCE(sat) ≤ 3.0 V at 8.0 A/2.0 A IB, fT ≥ 4.0 MHz, and TO-220-3 package thermal resistance RJC = 1.56 °C/W.

Technical Context

The MJE13007 operates as a high-voltage NPN switch with forward-biased SOA validated up to 400 V and 8 A (DC), and reverse-biased SOA rated for clamped inductive turn-off up to 300 V clamp voltage and 5.0 A collector current at 100 °C. Its design emphasizes fast fall time (tfi ≤ 0.20 µs at 100 °C) under reverse base-emitter bias, enabling efficient energy handling in flyback and push-pull converters.

It features a minimum hFE of 5.0 at IC = 5.0 A/VCE = 5.0 V, supports forced gain operation (IC/IB = 5), and maintains VBE(sat) ≤ 1.6 V at 5.0 A/1.0 A IB-critical for minimizing base drive losses in high-duty-cycle switching topologies. Thermal derating follows 0.64 W/°C above 25 °C case temperature.

Key Specifications

Pinout & Package

Package: TO-220-3 (Case 221A, Style 1), 10.10 × 15.12 × 4.45 mm, 2.54 mm pin pitch, insulated mounting surface, Pb-free and RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN power switching applications.

Compared with MJE13007, the MJE13005 offers lower cost but sacrifices 100 V blocking margin and 50% current capacity-limiting use to entry-level 115 VAC supplies. The ST13007 matches voltage rating and package but exhibits higher tfi and lower hFE, making it suitable only where MJE13007's sub-0.20 µs fall time is non-critical.

Availability

MJE13007 is available at Aetrix Electronics and suitable for switching regulators, inverters, motor controls, and solenoid/relay drivers requiring stable component supply across industrial, automotive aftermarket, and consumer electronics production programs.

Supply support for MJE13007 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The MJE13007 belongs to onsemi's high-voltage bipolar power transistor family, engineered specifically for rugged, high-reliability switching in off-line power conversion-emphasizing SOA integrity, thermal robustness, and fast inductive turn-off performance.

FAQ

What is the maximum safe collector-emitter voltage for MJE13007 in continuous operation?

The MJE13007 has a collector-emitter sustaining voltage VCEO(sus) of 400 Vdc, verified at IC = 10 mA and IB = 0. This is the maximum voltage the device can block in active switching mode without breakdown. Exceeding this value risks permanent damage, especially under inductive load conditions where voltage spikes may occur during turn-off.

Can MJE13007 be used in 220 VAC input switch-mode power supplies?

Yes, the MJE13007 is explicitly designed for 220 VAC switch-mode applications. Its 400 V VCEO(sus) and 700 V VCES ratings provide sufficient margin above the rectified 220 VAC peak (~311 VDC), and its clamped inductive SOA (Figure 7) supports reliable operation in flyback and forward converters derived from that bus.

What base drive conditions are required to achieve the specified 0.20 µs fall time (tfi) for MJE13007?

To achieve tfi ≤ 0.20 µs at 100 °C, the MJE13007 requires reverse base-emitter bias of −5 V during turn-off (per Figure 12 test conditions), with IB(off) = 2.5 A and Vclamp = 300 V. A dedicated negative base drive stage or Baker clamp is necessary-standard TTL or CMOS logic-level drive alone cannot meet this requirement.

Is MJE13007 pin-compatible with other TO-220 NPN transistors like MJE13003 or MJE13005?

No-while all share the TO-220-3 package, the MJE13007 uses Style 1 pinout (Base–Collector–Emitter–Collector), whereas MJE13003/MJE13005 follow Style 2 (Base–Emitter–Collector–Emitter). Swapping them without PCB revision risks incorrect biasing and catastrophic failure due to reversed emitter-collector connections.

Does MJE13007 require a heatsink in typical 8 A switching applications?

Yes. With PD = 80 W at TC = 25 °C and RJC = 1.56 °C/W, even modest power dissipation (e.g., 20 W at 100 kHz) raises junction temperature significantly. A heatsink with RJA ≤ 30 °C/W is recommended for continuous 8 A operation; thermal interface material and mounting torque (6–8 lbs) must comply with onsemi's guidelines to maintain RJC performance.