onsemi MJE13009

Overview

MJE13009 from ON Semiconductor is an NPN silicon power transistor designed for high-voltage, high-speed switching in inductive circuits-specifically 115 V and 220 V SWITCHMODE applications including switching regulators, inverters, motor controls, solenoid/relay drivers, and deflection circuits. It delivers 12 A continuous collector current, 400 V collector-emitter sustaining voltage (V_CEO(sus)), 700 V blocking capability (V_CEV), and 120 ns typical fall time (t_f) at 8 A and 100 °C.

For engineers reviewing the MJE13009 datasheet, pinout, applications, or equivalent options, key selection criteria include reverse-biased SOA performance at 100 °C, clamped inductive switching matrix (3–12 A), V_CE(sat) ≤ 1.5 V at 8 A/1.6 A, and TO-220AB package thermal resistance (R_JC = 1.25 °C/W).

Technical Context

The MJE13009 operates as a high-voltage NPN power switch optimized for fast turn-off under inductive loads with base-emitter reverse biasing (V_BE(off) = 5 V). Its design centers on robust reverse-bias safe operating area (SOA) compliance up to 100 °C case temperature and guaranteed inductive switching performance-including t_sv = 920 ns and t_c = 120 ns at 8 A and 100 °C.

It supports clamped inductive switching with V_clamp = 300 Vdc, exhibits second-breakdown-limited energy handling, and maintains stable h_FE = 6–30 across 5–8 A at V_CE = 5 V. Thermal design relies on low R_JC (1.25 °C/W) and 100 W total dissipation at T_C = 25 °C, derating to 800 mW/°C above 25 °C.

Key Specifications

Pinout & Package

Package: TO-220AB (Case 221A-09), 4-pin variant with Collector connected to both pins 2 and 4, enabling dual-collector mounting for enhanced thermal and current-handling capability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage power transistor applications.

Compared with BU508A and MJE13007, the MJE13009 uniquely balances 12 A continuous current, 120 ns fall time at 100 °C, and 700 V blocking in a thermally efficient TO-220AB package-making it optimal for mid-power, high-reliability SWITCHMODE systems where both speed and ruggedness are critical.

Availability

MJE13009 is available at Aetrix Electronics and suitable for switching regulators, inverters, motor controls, and solenoid/relay drivers requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant manufacturing.

Supply support for MJE13009 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (now part of onsemi) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MJE13009 belongs to the SWITCHMODE Series of NPN silicon power transistors engineered specifically for high-voltage, high-speed inductive switching-targeting reliability-critical applications like offline power supplies and motor drives.

FAQ

What is the maximum continuous collector current rating for the MJE13009?

The MJE13009 has a maximum continuous collector current (I_C) rating of 12 Adc at T_C = 25 °C. This rating decreases with rising case temperature due to thermal derating-800 mW/°C above 25 °C-and must be applied within the forward-bias SOA limits shown in Figure 1 of the datasheet. The MJE13009 achieves this current with V_CE(sat) ≤ 1.5 V when driven with I_B = 1.6 A.

Does the MJE13009 support reverse-biased base drive for improved switching performance?

Yes, the MJE13009 is explicitly characterized and rated for reverse-biased base drive (V_BE(off) = 5 V) during turn-off. Its reverse-bias SOA (Figure 2) and inductive switching data (Table 3) are validated under this condition. Using reverse bias reduces storage time and fall time-critical for minimizing crossover loss in high-frequency SWITCHMODE applications-and the MJE13009 guarantees t_c = 120 ns at 8 A and 100 °C under these conditions.

What is the difference between V_CEO(sus) and V_CEV for the MJE13009?

V_CEO(sus) = 400 Vdc is the collector-emitter sustaining voltage with base open-defining safe operating voltage during active conduction. V_CEV = 700 Vdc is the collector-emitter clamped voltage with base-emitter reverse biased-specifying peak blocking capability during off-state voltage transients. The MJE13009 leverages V_CEV for robustness against leakage inductance spikes in flyback and resonant converters, while V_CEO(sus) governs linear-mode safe operation.

Is the MJE13009 available in a Pb-free version?

Yes, the MJE13009G is the Pb-free variant of the MJE13009, packaged in the same TO-220AB outline with identical electrical and thermal specifications. The "G" suffix denotes RoHS-compliant termination, qualified per JESD201 Class 1A vibration and J-STD-020 moisture sensitivity level 1. Both MJE13009 and MJE13009G share identical marking, shipping (50 units/rail), and thermal characteristics-including R_JC = 1.25 °C/W.

How does the dual-collector TO-220AB package of the MJE13009 improve thermal performance?

The MJE13009's TO-220AB package features two collector terminals (Pins 2 and 4), both electrically connected to the die's collector region and mechanically bonded to the metal tab. This dual-collector configuration increases copper cross-section for current conduction and expands heatsink contact area-reducing effective thermal resistance and enabling more uniform heat spreading. As a result, the MJE13009 achieves R_JC = 1.25 °C/W, supporting 100 W dissipation at T_C = 25 °C and stable operation at elevated ambient temperatures in compact power modules.