onsemi MJE15035

Overview

MJE15035 from onsemi is a complementary PNP silicon plastic power transistor in TO−220 package, rated for 350 V_CEO, 4.0 A continuous collector current, and 50 W power dissipation at T_C = 25°C; it delivers f_T = 30 MHz and h_FE ≥ 100 at I_C = 0.1 A, designed specifically as a high-frequency driver stage in Class AB audio amplifier output circuits.

For engineers reviewing the MJE15035 datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, TO−220 thermal performance (R_JC = 2.5°C/W), safe operating area under pulsed conditions, V_CE(sat) ≤ 0.5 V at I_C/I_B = 10, and compatibility with NPN complement MJE15034 in push-pull configurations.

Technical Context

The MJE15035 operates as a linear PNP bipolar junction transistor optimized for audio frequency amplification up to 30 MHz f_T, with DC current gain h_FE ranging from 100 (at 0.1 A) down to 10 (at 2.0 A) under V_CE = 5 V bias. Its rugged SOA supports 100 ms pulses at 4 A/350 V and handles ±65°C to +150°C junction temperature swings.

Thermally, it relies on case-mounted heat sinking via the TO−220 metal tab (Pin 2 & 4 = Collector), achieving 2.5°C/W junction-to-case resistance; ambient-limited dissipation is only 2.0 W at 25°C due to R_JA = 62.5°C/W, requiring mechanical thermal management for full-power operation.

Key Specifications

Pinout & Package

Package: TO−220 (Case 221A, Style 1), 4-pin outline with Pins 2 and 4 internally connected to Collector; metal tab is Collector and electrically active. Dimensions: 10.10 × 15.12 × 4.45 mm, 2.54 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJE15035, the MJE15035G offers identical performance with mandatory environmental compliance, while BD711 trades voltage rating, speed, and thermal capability for lower cost and smaller footprint - making it unsuitable as a direct substitute in high-fidelity or high-power roles.

Availability

MJE15035 is available at Aetrix Electronics and suitable for high-fidelity audio amplifier output stages, professional PA system drivers, and studio monitor power sections requiring stable component supply, long-term lifecycle assurance, and consistent parametric binning across production lots.

Supply support for MJE15035 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MJE15035 belongs to onsemi's complementary silicon power transistor family engineered for high-linearity, high-voltage audio amplification - emphasizing rugged SOA, tight gain matching, and thermal reliability in discrete analog output stages.

FAQ

What is the maximum continuous collector current rating for the MJE15035?

The MJE15035 has a maximum continuous collector current (I_C) rating of 4.0 A at case temperature T_C = 25°C. This rating assumes adequate heatsinking to maintain the case within specification; current must be derated linearly above 25°C at 0.40 W/°C, and the device's safe operating area limits pulsed current based on duration and voltage. The MJE15035 must not exceed this limit in sustained operation to prevent thermal runaway or second breakdown.

Is the MJE15035 pin-compatible with the NPN MJE15034?

Yes, the MJE15035 is complementary and pin-compatible with the NPN MJE15034 in TO−220 package (Style 1), sharing identical pinout: Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter, Pin 4 = Collector. Both devices are designed for direct pairing in push-pull amplifier stages, with matched voltage ratings (350 V), current capability (4.0 A), and thermal characteristics (R_JC = 2.5°C/W), enabling symmetrical layout and thermal coupling on shared heatsinks.

What is the typical current gain bandwidth product (f_T) of the MJE15035?

The MJE15035 has a minimum specified current gain bandwidth product (f_T) of 30 MHz, measured at I_C = 500 mA, V_CE = 10 V, and f_test = 1.0 MHz. This f_T value confirms suitability for high-frequency audio driver applications, supporting stable gain and phase response well beyond the audible spectrum, and is validated across the −65°C to +150°C operating junction temperature range.

Does the MJE15035 require a heatsink in normal operation?

Yes, the MJE15035 requires a heatsink for any operation above ~0.5 W dissipation. Its ambient-limited power rating is only 2.0 W at T_A = 25°C (R_JA = 62.5°C/W); full-rated 50 W operation is only possible with case temperature maintained at 25°C via robust heatsinking. Without a heatsink, even moderate audio output levels will cause rapid junction temperature rise and potential thermal shutdown or failure. The metal tab (Collector) must be electrically isolated unless referenced to circuit ground.

What is the safe operating area (SOA) limitation for the MJE15035 at 100 ms pulse width?

Per the SOA curve in the official onsemi datasheet, the MJE15035 supports up to 4.0 A at 350 V for 100 ms pulses under DC conditions, provided case temperature remains ≤25°C. At higher temperatures or longer durations, the allowable voltage-current envelope contracts significantly due to thermal limitations. Designers must verify SOA compliance using the normalized transient thermal impedance curve (Figure 3) and ensure no operation exceeds the boundary defined by secondary breakdown, bond wire fusing, or thermal runaway thresholds.