onsemi MJE16004

Overview

MJE16004 from ON Semiconductor (formerly Motorola) is a high-gain NPN silicon power transistor designed for high-voltage, high-speed switching in inductive circuits where fall time and reverse-biased safe operating area (RBSOA) are critical. It delivers 5.0 A continuous collector current, 450 V collector-emitter sustaining voltage (V_CEO(sus)), and 80 W power dissipation at T_C = 25°C - optimized for line-operated switchmode applications with limited drive current.

For engineers reviewing the MJE16004 datasheet, pinout, applications, or equivalent options, this page provides verified technical context, validated pin configuration, confirmed switching performance at 100°C, RBSOA compliance data, and direct alternatives for high-voltage inductive switching designs.

Technical Context

The MJE16004 operates as a single NPN bipolar junction transistor with base-driven control, engineered specifically for clamped inductive turn-off where simultaneous high voltage and current must be sustained under reverse-biased base conditions. Its design emphasizes fast inductive fall time (80 ns typical at T_J = 100°C) and robust RBSOA performance up to 850 V_CEV.

It features a minimum DC current gain (h_FE) of 7.0 at I_C = 5.0 A and V_CE = 5.0 V, distinguishing it from the lower-gain MJE16002 (h_FE ≥ 5.0). Thermal resistance is fixed at 1.56°C/W (junction-to-case), and operation is fully specified from –65°C to +150°C junction temperature.

Key Specifications

Pinout & Package

Package: TO-220AB (Case 221A–06), isolated plastic power package with 4 leads - pins 1 (Base), 2 (Collector), 3 (Emitter), 4 (Collector). Mounting tab is Collector-connected and electrically isolated from PCB ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN power transistor applications.

Compared with MJE16002, the MJE16004 offers superior drive efficiency in current-limited gate stages; compared with BUL45, it delivers faster, temperature-validated switching and rigorously characterized RBSOA - making it the preferred choice for demanding inductive switching where reliability and thermal margin are non-negotiable.

Availability

MJE16004 is available at Aetrix Electronics and suitable for switching regulators, high-resolution deflection circuits, inverters, and motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and medical-grade production.

Supply support for MJE16004 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier specializing in power management, analog, sensor, and connectivity solutions for automotive, industrial, and cloud power applications.

The MJE16004 belongs to Motorola's legacy high-voltage bipolar power transistor family, engineered for ruggedized line-operated switchmode systems where RBSOA integrity, thermal stability, and high-current gain are essential design requirements.

FAQ

What is the maximum collector-emitter voltage rating for the MJE16004?

The MJE16004 has a collector-emitter sustaining voltage (V_CEO(sus)) rating of 450 Vdc, tested with base open. It also supports a higher clamped reverse-bias voltage (V_CEV) of 850 Vdc under controlled RBSOA conditions - critical for inductive turn-off reliability. This dual-voltage specification is explicitly defined in the Motorola Bipolar Power Transistor Device Data sheet for MJE16004.

How does the MJE16004 differ from the MJE16002 in terms of DC current gain?

The MJE16004 specifies a minimum DC current gain (h_FE) of 7.0 at I_C = 5.0 A and V_CE = 5.0 V, whereas the MJE16002 is rated at ≥5.0 under identical conditions. This 40% higher gain directly reduces required base drive current - for example, achieving 3.0 A collector current demands only 0.3 A base current for MJE16004 versus 0.4 A for MJE16002 - easing driver stage design in the MJE16004.

Is the MJE16004 pin-compatible with other TO-220AB transistors like the TIP31C?

No - the MJE16004 uses the TO-220AB package (Case 221A–06) with a 4-pin configuration: Pin 1 (Base), Pin 2 (Collector), Pin 3 (Emitter), Pin 4 (Collector). In contrast, TIP31C uses standard 3-pin TO-220 (Case 221D) with Base–Collector–Emitter pinout. The dual-collector layout and isolation structure of MJE16004 are unique to its family and not interchangeable with generic TO-220 devices.

What is the thermal resistance (R_θJC) of the MJE16004, and how does it affect heatsink selection?

The MJE16004 has a maximum junction-to-case thermal resistance (R_θJC) of 1.56°C/W, measured per Motorola's test methodology. At full 80 W dissipation, this yields a 125°C junction-to-case temperature rise - meaning a heatsink must maintain case temperature ≤50°C to keep T_J ≤150°C. This value is fixed by package construction and must be used directly in thermal calculations for the MJE16004; no derating or estimation is required.

Does the MJE16004 support operation at 100°C junction temperature, and which parameters are guaranteed at that condition?

Yes - the MJE16004 is fully specified at T_J = 100°C, including collector-emitter saturation voltage (V_CE(sat) ≤ 2.5 V at I_C = 3.0 A, I_B = 0.4 A), inductive fall time (t_fi = 80 ns typical), crossover time (t_c = 90 ns typical), and leakage currents (I_CEV ≤ 1.5 mA). These 100°C guarantees are explicitly documented in the "100°C Performance Specified" section of the official Motorola device data sheet for MJE16004.