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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MJE18002G

Name: MJE18002G
Brand: onsemi
SKU: MJE18002G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MJE18002G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: MJE18002G.pdf

Description:: TRANS NPN 450V 2A TO-220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MJE18002G from onsemi is an NPN bipolar power transistor designed for high-voltage switching in 220 V line-operated switch-mode power supplies and electronic light ballasts, featuring V_CEO = 450 V, I_C = 2.0 A continuous, P_D = 50 W at T_C = 25°C, and fast switching with t_off ≤ 2.5 µs at 125°C.

For engineers reviewing the MJE18002G datasheet, pinout, applications, or equivalent options, this device is selected for high-efficiency, low-base-drive switching in offline SMPS and ballast drivers where V_CES = 1000 V surge capability, tight h_FE distribution, and TO-220AB thermal performance (R_JC = 2.5°C/W) are critical.

Technical Context

The MJE18002G employs a state-of-the-art die optimized for hard-switched inductive loads, delivering flat DC current gain (h_FE = 11–34 at I_C = 0.2–1.0 A) across temperature and eliminating current tail during turn-off without requiring base-coil snubbing. Its rugged safe operating area supports clamped inductive switching up to V_CLAMP = 300 V with simultaneous high voltage and current stress.

Thermal design is enabled by low junction-to-case resistance (2.5°C/W), enabling reliable operation at T_J = 150°C when mounted on heatsinks; dynamic saturation voltage remains ≤ 8.0 V after 1.0 s at 125°C under 0.4 A/40 mA drive, confirming robustness in sustained conduction phases of ballast preheat cycles.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	450 Vdc - Sustains 450 V collector-emitter voltage under switching conditions without breakdown, suitable for 220 V AC line-derived 300–400 V DC bus rails.
I_C (continuous)	2.0 Adc - Supports continuous output current up to 2 A in power stage switching, enabling ≥60 W SMPS designs with margin.
P_D @ T_C = 25°C	50 W - Delivers full rated power dissipation when case temperature is maintained at 25°C, requiring effective heatsinking in real-world applications.
t_off (inductive)	1.7–2.75 µs - Fast turn-off time under inductive load (L = 200 µH, V_CLAMP = 300 V) minimizes switching losses and enables >50 kHz operation.
R_JC	2.5 °C/W - Low junction-to-case thermal resistance allows efficient heat transfer to heatsink, supporting stable operation at T_J = 150°C with modest thermal interface design.
h_FE @ I_C = 1.0 A	6.0–20 - Confirmed DC current gain range ensures predictable base drive sizing (I_B = 50–167 mA) for saturation across production lots.
V_CE(sat) @ I_C = 1.0 A	0.2–0.6 Vdc - Low saturation voltage reduces conduction loss and improves efficiency in high-current switching nodes.

Pinout & Package

Package: TO-220AB (Case 221A-09), 3-terminal through-hole package with electrically isolated tab (collector-connected), rated for 260°C lead soldering (5 s, 1/8″ from case).

Pin/Terminal	Circuit Role	Design Meaning
Collector (Tab)	Main current path input	Electrically connected to metal tab; must be insulated from heatsink unless circuit ground reference permits direct mounting.
Base	Control terminal	Receives low-current drive signal (I_B ≤ 1.0 A peak); requires no external coil for turn-off due to optimized die structure.
Emitter	Current return path	Serves as common reference node; connects to power ground or emitter resistor for current sensing and protection.

Key Features

Feature	Design Value
No base coil required for turn-off	Eliminates snubber inductance and associated PCB area/cost; enables simplified gate driver design in discrete SMPS controllers.
High and flat h_FE across I_C	h_FE = 11–34 over I_C = 0.01–1.0 A ensures consistent base drive requirements and stable loop gain in current-mode control.
Tight parametric lot-to-lot distribution	Reduces need for binning or system-level calibration; supports high-volume manufacturing with predictable thermal and switching behavior.
Pb-free and RoHS-compliant	Meets global environmental compliance requirements without derating or process change; compatible with standard lead-free reflow profiles.
V_CES = 1000 V rating	Withstands transient surges up to 1000 V in clamp or flyback topologies, enhancing reliability in unregulated or poorly filtered AC line inputs.

Applications

Compact Fluorescent Lamp (CFL) Ballasts	LED Driver Power Stages
Use Scenario: High-frequency resonant inverter driving lamp electrodes during preheat and run phases. IC Role / Device Role / Timing Role: Main switching transistor in half-bridge topology, handling 25–60 kHz square-wave switching with 300 V clamp. Use Value: Fast t_off ≤ 2.75 µs and low V_CE(sat) reduce switching and conduction losses, extending lamp life and improving lumen maintenance.	Use Scenario: Primary-side switch in isolated flyback LED drivers for commercial lighting. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from 375 V DC bus to transformer primary. Use Value: V_CES = 1000 V withstand capability prevents failure during output short-circuit or open-circuit transients.
Offline Switch-Mode Power Supplies	Electronic HID Ballasts
Use Scenario: 20–50 W AC/DC adapter with universal input (85–265 V AC). IC Role / Device Role / Timing Role: Main switch in DCM/CCM flyback converter, operating at 65 kHz with 450 V blocking. Use Value: Flat h_FE and tight parameter spread ensure stable regulation across line/load/temperature without feedback loop retuning.	Use Scenario: Ignition and sustaining switch in 70–150 W metal halide lamp ballasts. IC Role / Device Role / Timing Role: High-dV/dt switch managing lamp ignition pulses and steady-state AC square-wave inversion. Use Value: Rugged SOA and 150°C max junction temperature support repeated hot restrike cycles without thermal runaway.

Compact Fluorescent Lamp (CFL) Ballasts

LED Driver Power Stages

Use Scenario: High-frequency resonant inverter driving lamp electrodes during preheat and run phases.

IC Role / Device Role / Timing Role: Main switching transistor in half-bridge topology, handling 25–60 kHz square-wave switching with 300 V clamp.

Use Value: Fast t_off ≤ 2.75 µs and low V_CE(sat) reduce switching and conduction losses, extending lamp life and improving lumen maintenance.

Use Scenario: Primary-side switch in isolated flyback LED drivers for commercial lighting.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from 375 V DC bus to transformer primary.

Use Value: V_CES = 1000 V withstand capability prevents failure during output short-circuit or open-circuit transients.

Offline Switch-Mode Power Supplies

Electronic HID Ballasts

Use Scenario: 20–50 W AC/DC adapter with universal input (85–265 V AC).

IC Role / Device Role / Timing Role: Main switch in DCM/CCM flyback converter, operating at 65 kHz with 450 V blocking.

Use Value: Flat h_FE and tight parameter spread ensure stable regulation across line/load/temperature without feedback loop retuning.

Use Scenario: Ignition and sustaining switch in 70–150 W metal halide lamp ballasts.

IC Role / Device Role / Timing Role: High-dV/dt switch managing lamp ignition pulses and steady-state AC square-wave inversion.

Use Value: Rugged SOA and 150°C max junction temperature support repeated hot restrike cycles without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN bipolar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJE13003G	V_CEO = 400 V, I_C = 1.5 A, P_D = 40 W - Lower voltage/current ratings and higher V_CE(sat).	Not recommended for 220 V line applications above 40 W or where V_CLAMP > 350 V occurs.	Select only for lower-power (<35 W), cost-sensitive designs with relaxed voltage margin.
BU508AF	V_CEO = 1000 V, I_C = 8 A, but slower t_off ≈ 4 µs and higher C_ob - Higher capacitance increases switching loss at >30 kHz.	Better for high-voltage linear regulators or low-frequency inverters; less efficient in high-frequency SMPS.	Prefer for ultra-high-voltage applications (>600 V) where speed is secondary to breakdown margin.

Compared with MJE13003G and BU508AF, the MJE18002G delivers optimal balance of 450 V blocking, 2 A current, fast switching, and thermal efficiency for 25–60 W switch-mode systems-making it the preferred choice where both reliability and high-frequency operation are required.

Availability

MJE18002G is available at Aetrix Electronics and suitable for switch-mode power supplies, electronic ballasts, and LED driver power stages requiring stable component supply, long-term lifecycle continuity, and RoHS-compliant sourcing.

Supply support for MJE18002G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MJE18002G belongs to onsemi's high-voltage bipolar power transistor product line, engineered specifically for reliable, high-efficiency switching in offline AC/DC conversion and lighting control applications.

FAQ

What is the maximum collector-emitter voltage rating for the MJE18002G?

The MJE18002G has a collector-emitter sustaining voltage (V_CEO(sus)) of 450 Vdc, verified at I_C = 100 mA and L = 25 mH. This rating ensures reliable operation in 220 V AC line-derived 300–400 V DC bus applications. The device also supports V_CES = 1000 V for transient surge conditions, but sustained operation must remain within the 450 V V_CEO limit.

Does the MJE18002G require a base coil for turn-off in switching applications?

No, the MJE18002G does not require a base coil for turn-off. Its state-of-the-art die eliminates current tail during switching transitions, enabling clean, fast turn-off with simple resistive base drive. This simplifies circuit design and reduces component count compared to legacy bipolar transistors that rely on coil-based snubbers.

What is the thermal resistance from junction to case for the MJE18002G?

The MJE18002G has a thermal resistance from junction to case (R_JC) of 2.5°C/W, measured under standard test conditions. This low value enables efficient heat transfer to an external heatsink and supports continuous operation at T_J = 150°C when properly mounted with appropriate thermal interface material and mechanical pressure.

Is the MJE18002G RoHS-compliant and lead-free?

Yes, the MJE18002G is Pb-free and RoHS-compliant, as indicated by the "G" suffix in its part number and confirmed in the official datasheet. It meets EU Directive 2011/65/EU and is qualified for lead-free soldering processes with a maximum lead temperature of 260°C for 5 seconds at 1/8″ from the case.

What are the key switching performance metrics of the MJE18002G at 125°C?

At T_C = 125°C, the MJE18002G achieves t_on ≤ 150 ns and t_off ≤ 2.75 µs under inductive load (L = 200 µH, V_CLAMP = 300 V). Its dynamic saturation voltage remains ≤ 8.0 V after 1.0 s, confirming stable conduction behavior in thermally demanding ballast and SMPS applications.

MJE18002G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: SWITCHMODE™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 450 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 200mA, 1A

Current - Collector Cutoff (Max):: 100µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 14 @ 200mA, 5V

Power - Max:: 50 W

Frequency - Transition:: 13MHz

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

MJE18002G FAQ

1.How can I place an order for MJE18002G through Aetrix?

Please submit a Request for Quotation (RFQ) for MJE18002G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJE18002G reliable?

The price and inventory of MJE18002G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJE18002G is usually 5 days.

3.What payment methods are accepted for MJE18002G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJE18002G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJE18002G?

MJE18002G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJE18002G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJE18002G?

For technical support, including MJE18002G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJE18002G requirements.

6.How does Aetrix verify that MJE18002G is sourced from the original manufacturer or authorized distributors?

All MJE18002G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJE18002G meets industry standards.

7.What is the process for return or replacement of MJE18002G?

All MJE18002G units undergo pre-shipment inspection (PSI). If there is an issue with MJE18002G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJE18002G part is unused and in its original packaging.

Return procedure for MJE18002G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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