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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MJE18004G

Name: MJE18004G
Brand: onsemi
SKU: MJE18004G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MJE18004G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: MJE18004G.pdf

Description:: TRANS NPN 450V 5A TO-220

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Product details

Overview

MJE18004G from onsemi is an NPN bipolar power transistor optimized for high-voltage switching in 220 V line-operated switch-mode power supplies and electronic light ballasts. It delivers 5.0 A continuous collector current, sustains 450 V collector-emitter voltage, and achieves fast switching with turn-off time as low as 1.0 µs at 125°C - enabling compact, efficient SMPS designs in industrial lighting and AC-DC conversion.

For engineers reviewing the MJE18004G datasheet, pinout, applications, or equivalent options, key selection criteria include its 450 V V_CEO, 75 W T_C=25°C power dissipation, TO-220AB package with isolated collector terminals, low base drive requirements (h_FE ≥12 @ I_C=1.0 A), and dynamic saturation voltage performance under inductive load conditions.

Technical Context

The MJE18004G employs a state-of-the-art die optimized for high-voltage switching applications, featuring flat DC current gain (h_FE = 12–22 across I_C = 0.01–2.0 A) and minimized storage time (t_s ≤ 3.0 µs at 125°C). Its design eliminates need for external turn-off coil due to absence of current tail, reducing component count in base drive circuits.

Thermal performance is characterized by R_JC = 1.65 °C/W and full parametric validation at 125°C, supporting reliable operation in thermally demanding environments. The device meets ON Semiconductor's Six Sigma manufacturing standards, ensuring tight distribution of V_CE(sat) (0.25–0.5 V), t_on (75–90 ns), and t_off (1.5–2.5 µs) under specified inductive load test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	450 Vdc - Sustains 450 V collector-emitter voltage during switching transitions, suitable for 220 VAC line-derived topologies with safety margin.
I_C (continuous)	5.0 Adc - Supports up to 5 A steady-state collector current, enabling medium-power SMPS output stages (e.g., 100–200 W).
P_D @ T_C=25°C	75 W - Maximum junction-to-case power dissipation enables high-efficiency operation with standard heatsinking.
t_off (inductive)	1.5–2.5 µs @ 125°C - Fast turn-off minimizes switching losses in high-frequency ballast and SMPS designs (typically 20–100 kHz).
h_FE @ I_C=1.0 A	12–22 - High and flat DC current gain reduces required base drive current, simplifying driver stage design and improving efficiency.
R_JC	1.65 °C/W - Low thermal resistance from junction to case ensures effective heat transfer to heatsink, critical for sustained high-power operation.
V_CE(sat) @ I_C=2.0 A	0.29–0.6 V - Low saturation voltage limits conduction loss, directly improving system efficiency and reducing thermal stress.

Pinout & Package

Package: TO-220AB (Case 221A-09), non-isolated, Pb-free, through-hole mounting. Standard 3-pin configuration with collector connected to tab for direct heatsink coupling.

Pin	Circuit Role	Design Meaning
1	Base	Control terminal; accepts low-current drive signal to modulate collector current flow; requires no external turn-off coil due to fast intrinsic switching.
2	Collector	Main high-current, high-voltage output terminal; electrically connected to metal tab for thermal and electrical grounding to heatsink.
3	Emiter	Current return path; referenced to system ground in common-emitter configurations; defines current gain (h_FE) and saturation behavior.

Key Features

Feature	Design Value
High h_FE with flat curve	h_FE = 12–22 over I_C = 0.01–2.0 A - Enables stable, predictable gain across operating range, reducing base drive design complexity.
No current tail / no turn-off coil	Eliminates need for external base-turn-off circuitry - simplifies PCB layout, lowers BOM cost, and improves reliability in SMPS feedback loops.
Full 125°C characterization	All parameters (V_CE(sat), t_on, t_off, h_FE) guaranteed at 125°C - ensures robust performance in enclosed, high-ambient lighting and power supply enclosures.
Low dynamic saturation voltage	V_CE(dsat) = 1.3–11.3 V (1.0 s/3.0 s) under inductive load - maintains low conduction loss even during transient overload conditions.
ON Semiconductor Six Sigma process	Tight parametric distributions - reduces binning requirements and improves yield in high-volume industrial power supply manufacturing.

Applications

Electronic Ballasts	Switch-Mode Power Supplies
Use Scenario: Driving resonant LC tank in fluorescent or HID lamp ballasts operating from 220 VAC mains. IC Role / Device Role / Timing Role: Main switching transistor in half-bridge or single-ended flyback topology, handling high-voltage, high-dV/dt transitions. Use Value: 450 V V_CEO and fast t_off (≤2.5 µs) enable reliable operation at 20–60 kHz with minimal snubber loss.	Use Scenario: Primary-side switch in offline AC-DC converters for industrial control systems and telecom power modules. IC Role / Device Role / Timing Role: High-voltage NPN switch controlling energy transfer in forward or flyback transformers. Use Value: 75 W power rating and 1.65 °C/W R_JC support continuous 100–150 W output with passive heatsinking.
LED Driver Circuits	Inductive Load Switching
Use Scenario: Constant-current switching regulator for high-bay LED luminaires powered from universal AC input. IC Role / Device Role / Timing Role: Primary switch regulating bulk DC bus voltage before buck/boost LED current stage. Use Value: Low V_CE(sat) (0.29 V typ.) and high h_FE reduce driver-stage conduction loss, improving overall system efficacy >90%.	Use Scenario: Solenoid, relay, or motor drive in industrial automation where inductive kick must be clamped safely. IC Role / Device Role / Timing Role: Snubberless switching element managing stored inductive energy during turn-off. Use Value: Validated safe operating area (SOA) up to 300 V clamp voltage and 2.5 A peak current ensures robustness without external protection.

Electronic Ballasts

Switch-Mode Power Supplies

Use Scenario: Driving resonant LC tank in fluorescent or HID lamp ballasts operating from 220 VAC mains.

IC Role / Device Role / Timing Role: Main switching transistor in half-bridge or single-ended flyback topology, handling high-voltage, high-dV/dt transitions.

Use Value: 450 V V_CEO and fast t_off (≤2.5 µs) enable reliable operation at 20–60 kHz with minimal snubber loss.

Use Scenario: Primary-side switch in offline AC-DC converters for industrial control systems and telecom power modules.

IC Role / Device Role / Timing Role: High-voltage NPN switch controlling energy transfer in forward or flyback transformers.

Use Value: 75 W power rating and 1.65 °C/W R_JC support continuous 100–150 W output with passive heatsinking.

LED Driver Circuits

Inductive Load Switching

Use Scenario: Constant-current switching regulator for high-bay LED luminaires powered from universal AC input.

IC Role / Device Role / Timing Role: Primary switch regulating bulk DC bus voltage before buck/boost LED current stage.

Use Value: Low V_CE(sat) (0.29 V typ.) and high h_FE reduce driver-stage conduction loss, improving overall system efficacy >90%.

Use Scenario: Solenoid, relay, or motor drive in industrial automation where inductive kick must be clamped safely.

IC Role / Device Role / Timing Role: Snubberless switching element managing stored inductive energy during turn-off.

Use Value: Validated safe operating area (SOA) up to 300 V clamp voltage and 2.5 A peak current ensures robustness without external protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJF18004G	TO-220 Fullpak (isolated package); 35 W P_D; R_JC = 3.55 °C/W; UL Recognized (3500 V_RMS)	Required where reinforced isolation between leads and heatsink is mandated (e.g., Class II lighting systems)	Select MJF18004G when creepage/clearance compliance or regulatory isolation certification is required; not drop-in due to different thermal and mounting constraints.
BU508AF	Higher V_CES = 1500 V; lower I_C = 8 A (peak); slower t_off ≈ 4 µs; TO-220AB package	Better suited for higher-voltage flyback or resonant converters (>600 V reflected transients)	Choose BU508AF only when V_CES > 1000 V is needed; trade-off is reduced switching speed and higher V_CE(sat) (0.5–1.2 V).

Compared with MJE18004G, MJF18004G offers certified isolation but sacrifices 40 W of power dissipation and doubles thermal resistance, while BU508AF provides higher breakdown voltage at the cost of switching performance and efficiency in mid-voltage SMPS designs.

Availability

MJE18004G is available at Aetrix Electronics and suitable for electronic ballasts, switch-mode power supplies, and LED driver circuits requiring stable component supply, long-term industrial lifecycle support, and consistent parametric performance across production batches.

Supply support for MJE18004G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in power management, analog, sensor, and logic solutions for automotive, industrial, and cloud power applications.

The MJE18004G belongs to onsemi's high-voltage bipolar power transistor product line, engineered specifically for energy-efficient, thermally robust switching in 220 V line-operated lighting and power conversion systems.

FAQ

What is the maximum collector-emitter sustaining voltage for MJE18004G?

The MJE18004G has a guaranteed collector-emitter sustaining voltage (V_CEO(sus)) of 450 Vdc at I_C = 100 mA and L = 25 mH. This rating is validated under switching conditions and supports reliable operation in 220 VAC-derived topologies with appropriate derating per IEC/UL safety margins.

Does MJE18004G require a base turn-off coil?

No, the MJE18004G does not require a base turn-off coil. Its internal die design eliminates current tail during turn-off, enabling clean, fast switching with simple resistor-based base drive - a key feature confirmed in the datasheet's "Improved Efficiency" section and verified by t_off measurements down to 1.0 µs.

What is the thermal resistance junction-to-case for MJE18004G?

The MJE18004G has a maximum thermal resistance of R_JC = 1.65 °C/W, measured from junction to case (tab). This value is specified in the Thermal Characteristics table and enables effective heat transfer when mounted to a heatsink using recommended torque (6–8 in·lbs) per Figure 23a.

Is MJE18004G RoHS compliant and Pb-free?

Yes, MJE18004G is Pb-free and RoHS compliant, as explicitly stated in the datasheet's "Features" section and confirmed in the Ordering Information table (marked with "G" suffix). It meets onsemi's Pb-Free strategy and is compatible with lead-free reflow and wave soldering processes.

What are the pin assignments for MJE18004G in TO-220AB package?

In the TO-220AB (Case 221A-09) package, MJE18004G pinout is: Pin 1 = Base, Pin 2 = Collector (connected to metal tab), Pin 3 = Emitter. This configuration is documented in the "Marking Diagrams" and "Mechanical Case Outline" sections of the datasheet (page 8 and cover page).

MJE18004G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: SWITCHMODE™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 5 A

Voltage - Collector Emitter Breakdown (Max):: 450 V

Vce Saturation (Max) @ Ib, Ic:: 750mV @ 500mA, 2.5A

Current - Collector Cutoff (Max):: 100µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 14 @ 300mA, 5V

Power - Max:: 75 W

Frequency - Transition:: 13MHz

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

MJE18004G FAQ

1.How can I place an order for MJE18004G through Aetrix?

Please submit a Request for Quotation (RFQ) for MJE18004G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJE18004G reliable?

The price and inventory of MJE18004G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJE18004G is usually 5 days.

3.What payment methods are accepted for MJE18004G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJE18004G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJE18004G?

MJE18004G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJE18004G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJE18004G?

For technical support, including MJE18004G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJE18004G requirements.

6.How does Aetrix verify that MJE18004G is sourced from the original manufacturer or authorized distributors?

All MJE18004G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJE18004G meets industry standards.

7.What is the process for return or replacement of MJE18004G?

All MJE18004G units undergo pre-shipment inspection (PSI). If there is an issue with MJE18004G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJE18004G part is unused and in its original packaging.

Return procedure for MJE18004G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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