Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi MJE200STU

Part No.:
MJE200STU
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-225AA, TO-126-3
Datasheet:
AetrixMJE200STU.pdf
Description:
TRANS NPN 25V 5A TO-126-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:99,932

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

MJE200STU from ON Semiconductor (formerly Fairchild) is an NPN epitaxial silicon power transistor in TO-126 package, rated for 25 V VCEO, 5 A IC, 15 W PC at TC=25°C, with fT=65 MHz and low VCE(sat) of 0.3 V at IC=500 mA/IB=50 mA - used in linear amplifiers, switching regulators, and motor drive stages.

For engineers reviewing the MJE200STU datasheet, pinout, applications, or equivalent options, key selection criteria include verified DC current gain (hFE ≥70 at IC=500 mA), thermal derating behavior, safe operating area (SOA) limits, and complementary pairing with MJE210 in push-pull output stages.

Technical Context

This NPN bipolar junction transistor employs epitaxial base construction to support high-speed switching and linear operation. Its fT=65 MHz enables audio-frequency amplification and medium-speed switching up to ~10 MHz, while VCE(sat) ≤1.8 V at IC=5 A ensures low conduction loss in saturated-switching applications.

The device operates within a junction temperature range of –65°C to +150°C and features low leakage: ICBO ≤100 nA at 40 V and ≤100 µA at 125°C. Its complement, MJE210, shares identical TO-126 mechanical form and thermal profile but with matched hFE spread and inverted polarity.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO25 V - maximum collector-emitter voltage before breakdown under open-base condition; defines safe DC/peak voltage swing in amplifier or switch circuits.
IC5 A - continuous collector current rating; sets upper limit for load-handling capability in power stage designs.
PC @ TC=25°C15 W - thermal power dissipation limit at case temperature 25°C; requires heatsinking above ~2 W in practical operation.
fT65 MHz - current-gain bandwidth product; supports stable small-signal amplification up to ~10 MHz and fast switching transitions.
VCE(sat) @ IC=5 A1.8 V - collector-emitter saturation voltage at full rated current; determines conduction loss and heat generation in on-state switching.
hFE @ IC=500 mA70–180 - DC current gain range at moderate bias; enables predictable base drive sizing for linear or saturated operation.
Cob80 pF @ VCB=10 V - output capacitance; impacts high-frequency response and switching speed in tuned or RF-coupled circuits.

Pinout & Package

Package: TO-126 - thermally robust through-hole plastic power package with metal tab for heatsink mounting; pin 1 = Emitter, pin 2 = Collector (tab-connected), pin 3 = Base.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)Current exit path for majority carriersConnected to ground or low-side return; must handle full load current and be routed with low-inductance layout.
2 (Collector)Current entry path; electrically tied to metal tabTab is collector - requires insulated mounting hardware when heatsink is grounded; defines thermal path to ambient.
3 (Base)Control terminal for minority-carrier injectionRequires current-limited drive (e.g., 1 A max for 5 A IC); sensitive to ESD and overvoltage transients.

Key Features

FeatureDesign Value
Low VCE(sat)0.3 V at IC=500 mA/IB=50 mA - reduces conduction loss and self-heating in Class-A/B amplifiers and PWM drivers.
High fT65 MHz minimum - enables faithful reproduction of audio signals and reliable switching in 1–5 MHz DC-DC converters.
Complementary pairingDesigned as direct counterpart to MJE210 (PNP) - allows matched thermal tracking and symmetrical push-pull output stages.
Robust SOARated for 5 A/25 V DC operation with defined second-breakdown limits - supports reliable linear-mode operation without forced cooling.

Applications

Audio Power AmplifierDC-DC Converter Switch

Use Scenario: Output stage in 5–10 W single-ended or push-pull audio amplifier driving 4–8 Ω speakers.

IC Role / Device Role / Timing Role: NPN power switch amplifying line-level input into speaker-current output; biased in Class AB.

Use Value: Low VCE(sat) minimizes crossover distortion and thermal drift; hFE stability across IC ensures consistent gain control.

Use Scenario: Main switching transistor in 24 V input, 5–12 V output buck converter delivering up to 3 A.

IC Role / Device Role / Timing Role: Saturated-mode power switch controlled by PWM IC; operates at ≤200 kHz.

Use Value: 1.8 V VCE(sat) at 5 A keeps conduction loss below 9 W; TO-126 tab enables direct heatsink attachment for thermal management.

Motor Drive Half-BridgeLinear Voltage Regulator Pass Element

Use Scenario: Low-side switch in brushed DC motor driver for 12 V, 2–4 A fans or actuators.

IC Role / Device Role / Timing Role: Ground-referenced NPN switch turning motor winding on/off via microcontroller GPIO.

Use Value: 5 A IC rating accommodates motor stall current; fast fT supports PWM frequencies up to 20 kHz without switching loss penalty.

Use Scenario: Series pass transistor in adjustable linear regulator supplying 3.3 V/2 A from 12 V input.

IC Role / Device Role / Timing Role: Continuously biased active element dissipating excess voltage as heat.

Use Value: 15 W PC rating allows 8.7 V × 2 A = 17.4 W worst-case drop - requires heatsink but avoids thermal shutdown during sustained load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJE172VCEO=30 V, IC=3 A, PC=10 W, fT=100 MHz - lower current/power, higher speedSuitable for lower-power audio or signal switching where gain-bandwidth >65 MHz is prioritized over current handlingSelect MJE172 when design operates <3 A and benefits from faster transition times; not interchangeable at full MJE200STU load.
TIP31CVCEO=100 V, IC=3 A, PC=40 W, fT=3 MHz - higher voltage rating, lower speed, higher power dissipationBetter suited for high-voltage industrial controls or relay drivers where 25 V margin is insufficientChoose TIP31C for >40 V bus applications; verify SOA compatibility - its slower fT limits use in >100 kHz switching.

Compared with MJE172 and TIP31C, the MJE200STU occupies a mid-range niche: it delivers higher current than MJE172 while maintaining usable fT, and offers superior switching speed versus TIP31C without sacrificing thermal robustness in 25 V systems.

Availability

MJE200STU is available at Aetrix Electronics and suitable for audio amplifiers, DC-DC converters, motor drives, and linear regulators requiring stable component supply with documented thermal performance and SOA compliance.

Supply support for MJE200STU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (acquired Fairchild Semiconductor in 2016) designs and manufactures high-performance analog, discrete, and power management semiconductors for automotive, industrial, and consumer applications.

The MJE200STU belongs to Fairchild's legacy general-purpose power transistor family, engineered for cost-sensitive, thermally demanding linear and switching applications where reliability and SOA integrity are critical.

FAQ

What is the maximum continuous collector current rating for MJE200STU?

The MJE200STU is rated for 5 A continuous collector current (IC) at case temperature TC = 25°C. Derating is required above 25°C per the published power derating curve - at TC = 100°C, the usable IC drops to approximately 2.5 A. This rating assumes proper heatsinking and adherence to the Safe Operating Area (SOA) limits defined in the datasheet.

Is MJE200STU pin-compatible with MJE210?

No - MJE200STU (NPN) and MJE210 (PNP) are complementary devices with identical TO-126 package outline and pinout (Emitter-Collector-Base), but opposite polarity. They share mechanical and thermal characteristics, enabling matched push-pull designs, but cannot be substituted directly due to reversed current flow and bias requirements.

What is the typical VCE(sat) of MJE200STU at full rated current?

At IC = 5 A and IB = 1 A, the MJE200STU exhibits VCE(sat) ≤ 1.8 V. This value is confirmed in the "Electrical Characteristics" table under test condition IC=5A, IB=1A. It reflects conduction loss under hard saturation and informs thermal design - at 5 A, this yields up to 9 W of resistive heating at the collector-emitter junction.

Does MJE200STU have built-in protection features such as thermal shutdown or overcurrent limiting?

No - the MJE200STU is a discrete bipolar junction transistor with no integrated protection circuitry. It relies entirely on external design measures: base current limiting, heatsinking, SOA-aware layout, and system-level current/voltage clamping. Its 150°C maximum junction temperature and defined SOA provide inherent ruggedness, but designers must implement all protection externally.

Can MJE200STU be used in switching power supplies operating above 100 kHz?

Yes - with caveats. The MJE200STU's fT = 65 MHz supports switching up to ~10 MHz in small-signal contexts, but practical hard-switching efficiency above 100 kHz is limited by stored charge and minority-carrier lifetime. For reliable operation >100 kHz, gate/base drive strength, snubber networks, and SOA margins must be rigorously validated - many designs prefer faster FETs above 200 kHz.

MJE200STU Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-225AA, TO-126-3
Packaging:
Bulk
Product Status:
Active
Transistor Type:
NPN
Current - Collector (Ic) (Max):
5 A
Voltage - Collector Emitter Breakdown (Max):
25 V
Vce Saturation (Max) @ Ib, Ic:
1.8V @ 1A, 5A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
45 @ 2A, 1V
Power - Max:
15 W
Frequency - Transition:
65MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-126-3

MJE200STU FAQ

1.How can I place an order for MJE200STU through Aetrix?

Please submit a Request for Quotation (RFQ) for MJE200STU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJE200STU reliable?

The price and inventory of MJE200STU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJE200STU is usually 5 days.

3.What payment methods are accepted for MJE200STU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJE200STU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJE200STU?

MJE200STU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJE200STU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJE200STU?

For technical support, including MJE200STU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJE200STU requirements.

6.How does Aetrix verify that MJE200STU is sourced from the original manufacturer or authorized distributors?

All MJE200STU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJE200STU meets industry standards.

7.What is the process for return or replacement of MJE200STU?

All MJE200STU units undergo pre-shipment inspection (PSI). If there is an issue with MJE200STU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJE200STU part is unused and in its original packaging.

Return procedure for MJE200STU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MJE200STU Tags

  • MJE200STU
  • MJE200STU PDF
  • MJE200STU Datasheet
  • MJE200STU Specifications
  • MJE200STU Images
  • onsemi
  • onsemi MJE200STU
  • Buy MJE200STU
  • MJE200STU Price
  • MJE200STU Distributor
  • MJE200STU Supplier
  • MJE200STU Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER