onsemi MJE210

Overview

MJE210 from ON Semiconductor is a PNP epitaxial silicon power transistor in TO-126 package, rated for −25 V V_CEO, −5 A I_C, 15 W P_C at T_C = 25°C, with f_T = 65 MHz and low V_CE(sat) of −0.3 V at I_C = −500 mA / I_B = −50 mA - used in linear amplification and switching stages of audio output and power supply circuits.

For engineers reviewing the MJE210 datasheet, pinout, applications, or equivalent options, key selection considerations include its PNP polarity, TO-126 thermal performance, DC current gain range (h_FE = 10–180), saturation voltage behavior under high-current drive, and complementary pairing with MJE200 in push-pull configurations.

Technical Context

The MJE210 operates as a medium-power PNP bipolar junction transistor optimized for linear and switching applications where low saturation voltage and stable high-current gain are required. Its structure supports operation up to 150°C junction temperature and features a maximum collector-base voltage of −40 V and emitter-base voltage of −8 V.

Designed for discrete amplifier and regulator output stages, it delivers f_T = 65 MHz at V_CE = −10 V and I_C = −100 mA, with Cob = 120 pF at V_CB = −10 V, enabling use in audio-frequency amplifiers and DC-DC converter switching elements where bandwidth and capacitance impact stability.

Key Specifications

Pinout & Package

Package: TO-126 - plastic molded, through-hole, single-ended power package with integral heat sink tab (pin 2 connected to collector and tab). Designed for PCB mounting with mechanical stress relief and direct heatsink attachment via screw or clip.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJE210, MJE210G offers identical performance in an environmentally compliant package, while BD139 trades lower saturation voltage and tighter gain control for higher voltage tolerance - making MJE210 optimal for mid-voltage linear and switching roles where thermal and conduction efficiency are prioritized.

Availability

MJE210 is available at Aetrix Electronics and suitable for audio amplifier output stages, linear voltage regulator pass elements, and DC-DC converter switches requiring stable component supply and consistent parametric performance across production lots.

Supply support for MJE210 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensors, and logic devices for automotive, industrial, and consumer applications.

The MJE210 belongs to ON Semiconductor's legacy discrete power transistor family, engineered for robustness and consistency in analog power control and amplification circuits where reliability under thermal stress is essential.

FAQ

What is the maximum collector current rating for the MJE210?

The MJE210 has a maximum continuous collector current rating of −5 A at T_C = 25°C. This rating assumes proper heatsinking and derates linearly as case temperature increases, reaching zero at approximately 150°C. For reliable long-term operation, design margins should limit peak I_C to ≤4 A in sustained duty cycles. The MJE210 datasheet specifies this value under absolute maximum ratings and confirms it across multiple test conditions including pulse testing.

Does the MJE210 have a built-in heatsink tab, and how is it electrically connected?

Yes, the MJE210 in TO-126 package features an integral metal tab that serves as both mechanical heatsink interface and electrical connection to the collector terminal (Pin 2). This tab must be electrically isolated from other circuit nodes unless intentional collector-to-chassis connection is required. Thermal resistance from junction to case is specified at 2.5°C/W, making effective mounting to an external heatsink critical for operation above 1 W dissipation. The MJE210's tab design enables direct screw-down attachment without additional hardware.

What is the typical DC current gain (h_FE) of the MJE210 at different operating points?

The MJE210 exhibits h_FE = 70–180 at V_CE = −1 V and I_C = −500 mA, h_FE = 45–180 at V_CE = −1 V and I_C = −2 A, and h_FE = 10–180 at V_CE = −2 V and I_C = −5 A. These ranges reflect process variation and are confirmed in the official MJE210 datasheet. Gain decreases with increasing current and decreasing V_CE, so bias networks must accommodate this nonlinearity - especially in Class AB audio stages where the MJE210 operates near its upper h_FE boundary.

Is the MJE210 pin-compatible with the MJE200?

No, the MJE210 is not pin-compatible with the MJE200 - they are complementary devices (PNP vs NPN) with identical TO-126 mechanical footprint but reversed pin assignments: MJE210 uses Pin 1 = Emitter, Pin 2 = Collector, Pin 3 = Base, whereas MJE200 uses Pin 1 = Collector, Pin 2 = Base, Pin 3 = Emitter. Using them interchangeably without board revision will result in circuit failure. The MJE210 datasheet explicitly states their functional complementarity, not physical compatibility.

What is the safe operating area (SOA) limitation for the MJE210 in linear mode?

The MJE210 SOA curve (Figure 4 in the datasheet) defines maximum simultaneous V_CE and I_C combinations permissible without second breakdown. At DC operation, it limits V_CE × I_C to ≤15 W below 1 V, tightening to ≤5 W at V_CE = −10 V and I_C = −1 A. Pulse operation extends boundaries - e.g., 10 ms pulses allow up to −20 V / −2.5 A. Exceeding SOA risks irreversible thermal runaway. Designers must verify MJE210 operation within these boundaries using the published SOA graph, not just power dissipation calculations.