onsemi MJE210G

Overview

MJE210G from ON Semiconductor is a PNP epitaxial silicon power transistor in TO-126 package, rated for -25 V V_CEO, -5 A I_C, 15 W P_C, with h_FE ≥ 45 at -2 A and f_T = 65 MHz. It serves as a medium-power switching or linear amplification device in DC-DC converters, relay drivers, and audio output stages.

For engineers reviewing the MJE210G datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, TO-126 thermal performance, saturation voltage under high-current drive, complementary pairing with MJE200, and safe operating area limits at elevated case temperatures.

Technical Context

The MJE210G operates as a bipolar junction transistor with fixed PNP polarity and epitaxial base construction, enabling stable gain and low leakage across its rated junction temperature range (-65°C to +150°C). Its design supports continuous collector current up to -5 A with forced base drive, and it exhibits defined saturation behavior at multiple current levels (e.g., V_CE(sat) = -0.75 V at I_C = -2 A, I_B = -200 mA).

Electrical characterization is specified at T_C = 25°C for absolute maximums and at T_J = 25°C for typical electrical parameters, with derating curves provided for power dissipation above 25°C case temperature. The device's Cob = 120 pF at V_CB = -10 V enables predictable high-frequency switching behavior within its 65 MHz f_T bandwidth limit.

Key Specifications

Pinout & Package

Package: TO-126 molded plastic case with integral heat sink tab (pin 2), standardized for medium-power discrete mounting and thermal management.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJE210G, the MJE210 offers identical electrical performance but lacks formal RoHS certification documentation, while BD140 trades bandwidth and gain for higher voltage rating and broader legacy availability-neither qualifies as pin-compatible, but both serve overlapping medium-power PNP roles with distinct trade-offs.

Availability

MJE210G is available at Aetrix Electronics and suitable for motor drive stages, DC-DC converter switches, and relay/solenoid drivers requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant packaging.

Supply support for MJE210G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and discrete solutions for automotive, industrial, and cloud power applications.

The MJE210G belongs to ON Semiconductor's legacy Fairchild discrete transistor portfolio, engineered for cost-sensitive, medium-power linear and switching applications where thermal robustness and complementary pairing matter.

FAQ

What is the maximum collector-emitter voltage rating for MJE210G?

The MJE210G has a maximum collector-emitter voltage rating (V_CEO) of -25 V at T_C = 25°C. This rating applies under open-base conditions and must be derated linearly above 25°C case temperature per the published power derating curve. Exceeding this voltage risks avalanche breakdown and permanent device failure. Always verify operating margin against worst-case system transients when using MJE210G in real-world circuits.

Does MJE210G have a RoHS-compliant version?

Yes, MJE210G is the RoHS-compliant version of the original MJE210, introduced after ON Semiconductor's integration of Fairchild. The 'G' suffix explicitly denotes lead-free, halogen-free packaging and manufacturing per EU RoHS Directive 2011/65/EU. MJE210G meets J-STD-609A marking requirements and carries full material declarations. Legacy MJE210 parts may still circulate but lack formal RoHS documentation.

What is the typical DC current gain (h_FE) of MJE210G at -2 A collector current?

The MJE210G specifies h_FE ≥ 45 at V_CE = -1 V and I_C = -2 A, with an upper limit of 180 under the same conditions. This gain range is confirmed in the official datasheet and reflects production lot variation. For stable bias design, engineers should use the minimum value (45) to ensure saturation across temperature and process corners when calculating base drive requirements for MJE210G.

Can MJE210G be used as a direct replacement for MJE200 in circuit designs?

No - MJE210G is a PNP transistor, while MJE200 is an NPN device; they are complementary, not interchangeable. The MJE210G is explicitly intended as the PNP counterpart to MJE200 in push-pull or quasi-complementary amplifier stages. Swapping them without inverting biasing and signal polarity will result in circuit failure. Their pinouts also differ: MJE210G is E-C-B (pin 1–2–3), whereas MJE200 is C-B-E.

What thermal considerations apply when mounting MJE210G on a PCB?

MJE210G uses a TO-126 package with pin 2 (collector) electrically and thermally connected to the metal tab. For optimal thermal performance, mount the tab directly to a copper pour or heatsink using thermal compound and mechanical fastening. The datasheet specifies 15 W maximum dissipation at T_C = 25°C, dropping linearly to zero at ~125°C case temperature. Without heatsinking, sustained >2 W dissipation risks exceeding T_J = 150°C. Always verify board-level thermal resistance in your layout before finalizing MJE210G usage.