onsemi MJE210STU

Overview

MJE210STU from ON Semiconductor is a PNP epitaxial silicon power transistor in TO-126 package, rated for −25 V V_CEO, −5 A I_C, 15 W P_C, with f_T = 65 MHz and low V_CE(sat) of −0.3 V at −500 mA/−50 mA drive-used in linear amplifiers, relay drivers, and DC power control stages.

For engineers reviewing the MJE210STU datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, TO-126 thermal performance, h_FE range (10–180), V_BE(sat) = −2.5 V at −5 A/−1 A, and Cob = 120 pF at −10 V-critical for switching speed and thermal stability in medium-power analog and discrete logic interface circuits.

Technical Context

The MJE210STU operates as a medium-power PNP bipolar junction transistor optimized for linear and saturated switching applications. Its design supports high DC current gain at low-to-moderate collector currents (h_FE = 70 min @ −500 mA) and retains usable gain up to −5 A (h_FE = 10 min), enabling stable biasing across wide load ranges.

Thermal derating begins at T_C = 25°C with 15 W dissipation, dropping linearly to zero at 150°C junction temperature. Safe operating area (SOA) curves confirm capability for pulsed operation up to 100 µs at −10 A/−20 V, supporting robust transient handling in industrial control outputs.

Key Specifications

Pinout & Package

Package: TO-126 plastic power package with integral metal tab for heatsinking; dimensions 16.10 × 13.06 × 4.2 mm (L×W×H), lead pitch 2.28 mm, emitter-collector-base pin order confirmed per official mechanical drawing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJE210STU, MJE210G offers identical performance with RoHS compliance, while BD140 trades bandwidth and pin compatibility for broader h_FE tolerance-making MJE210STU optimal for speed-critical, drop-in-replacement scenarios in existing TO-126 layouts.

Availability

MJE210STU is available at Aetrix Electronics and suitable for industrial relay drivers, audio amplifier output stages, and DC motor direction control circuits requiring stable component supply and long-term obsolescence management.

Supply support for MJE210STU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensors, and discrete devices for automotive, industrial, and cloud infrastructure markets.

The MJE210STU belongs to ON Semiconductor's legacy Fairchild discrete transistor portfolio, engineered for medium-power linear and switching applications where reliability, thermal robustness, and complementary NPN/PNP pairing are essential.

FAQ

What is the maximum junction temperature rating for the MJE210STU?

The MJE210STU has a maximum junction temperature (T_J) rating of 150°C, as specified in its Absolute Maximum Ratings table. This value defines the upper thermal limit for reliable operation and must be respected during thermal design. Derating curves show power dissipation decreases linearly above 25°C case temperature, reaching zero at 150°C. Proper heatsinking is required to maintain T_J ≤ 150°C under full-load conditions in the MJE210STU.

Is the MJE210STU pin-compatible with the MJE200?

No, the MJE210STU is not pin-compatible with the MJE200. The MJE210STU is a PNP transistor in TO-126 package with pinout Emitter–Collector–Base (1–2–3), while the MJE200 is an NPN device with Emitter–Base–Collector (1–2–3) arrangement. Though designed as complementary types for push-pull circuits, their pinouts differ-requiring separate PCB footprints. Always verify pin assignments using the official ON Semiconductor datasheet for MJE210STU and MJE200 before layout.

What is the typical DC current gain (h_FE) of the MJE210STU at −2 A collector current?

The typical DC current gain (h_FE) of the MJE210STU at V_CE = −1 V and I_C = −2 A is 45 (minimum), with a maximum of 180 per the Electrical Characteristics table. This gain range supports stable biasing in medium-current switching and linear applications. Designers should use the minimum value (45) for worst-case calculations involving base drive requirements and thermal stability in the MJE210STU.

Does the MJE210STU have built-in protection features such as thermal shutdown or overcurrent limiting?

No, the MJE210STU is a discrete bipolar junction transistor without integrated protection circuitry. It lacks thermal shutdown, overcurrent limiting, or built-in diodes. External protection-including base current limiting, collector-emitter flyback diodes, and heatsink-mounted thermal cutoffs-is required for reliable operation. The device's Safe Operating Area (SOA) curve must be consulted to ensure transient stresses remain within limits during switching events in the MJE210STU.

Can the MJE210STU be used in high-frequency amplifier designs above 10 MHz?

Yes, the MJE210STU can be used in high-frequency amplifier designs up to approximately 10 MHz, supported by its 65 MHz current-gain bandwidth product (f_T) measured at −10 V V_CE and −100 mA I_C. However, gain rolls off with increasing current and voltage; actual usable bandwidth in a given circuit depends on bias point, load impedance, and layout parasitics. For stable small-signal amplification near 10 MHz, keep I_C ≤ −100 mA and use proper RF grounding techniques with the MJE210STU.