onsemi MJE210TG

Overview

MJE210TG from ON Semiconductor is a PNP epitaxial silicon power transistor in TO-126 package, rated for −25 V V_CEO, −5 A I_C, 15 W P_C at T_C = 25°C, and featuring f_T = 65 MHz - used in linear amplification, switching regulators, and high-current driver stages.

For engineers reviewing the MJE210TG datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, TO-126 thermal performance, DC current gain (h_FE = 70–180 across 0.5–5 A), low V_CE(sat) (−0.3 V to −1.8 V), and safe operating area compliance up to 150°C junction temperature.

Technical Context

The MJE210TG operates as a medium-power PNP bipolar junction transistor with complementary pairing to the NPN MJE200 series. Its design supports linear and saturated switching modes, with validated h_FE minima of 70 at I_C = −500 mA and 10 at I_C = −5 A, and V_BE(sat) = −2.5 V at I_C = −5 A / I_B = −1 A.

Thermal derating begins at T_C > 25°C, with linear reduction to zero dissipation at 150°C case temperature. Cob = 120 pF at V_CB = −10 V enables stable operation in audio-frequency and SMPS feedback paths without parasitic oscillation.

Key Specifications

Pinout & Package

Package: TO-126 - thermally robust through-hole plastic package with metal tab for heatsink mounting; pin 1 = Emitter, pin 2 = Collector (tab-connected), pin 3 = Base.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJE210G and BD139, the MJE210TG delivers optimized trade-offs for medium-voltage, medium-speed PNP switching: its −25 V rating targets 24 V systems, its −1.8 V V_CE(sat) at −5 A lowers conduction loss versus BD139, and its RoHS-compliant construction ensures modern manufacturing compliance.

Availability

MJE210TG is available at Aetrix Electronics and suitable for audio amplifier output stages, DC motor driver H-bridge legs, and linear voltage regulator pass elements requiring stable component supply and TO-126 thermal reliability.

Supply support for MJE210TG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MJE210TG belongs to ON Semiconductor's legacy power bipolar transistor family, originally developed by Fairchild and optimized for cost-sensitive, thermally demanding linear and switching applications in industrial controls and analog power systems.

FAQ

What is the maximum junction temperature specification for the MJE210TG?

The MJE210TG has a maximum junction temperature (T_J) of 150°C, as confirmed in its Absolute Maximum Ratings table. This rating applies under steady-state thermal conditions and must be respected in thermal design - actual operating T_J depends on case temperature, heatsink efficiency, and power dissipation. Derating curves in the datasheet show linear reduction of P_C above 25°C case temperature, reaching zero at 150°C. For reliable long-term operation, keep MJE210TG T_J ≤ 135°C in most industrial applications.

Is the MJE210TG pin-compatible with the MJE210G?

Yes, the MJE210TG is physically and electrically pin-compatible with the MJE210G - both use identical TO-126 packaging, pin 1 = Emitter, pin 2 = Collector (tab), pin 3 = Base, and share identical absolute maximum ratings and electrical characteristics. The sole distinction is environmental compliance: MJE210TG is lead-free and RoHS-compliant, while MJE210G may be supplied in legacy Pb-bearing form. No PCB layout changes are needed when substituting MJE210TG for MJE210G in existing designs.

What is the typical DC current gain (h_FE) of the MJE210TG at 2 A collector current?

At V_CE = −1 V and I_C = −2 A, the MJE210TG exhibits h_FE = 45 (minimum) per its Electrical Characteristics table. This value reflects guaranteed minimum gain under those specific test conditions - typical units often exceed 70. Designers should size base drive using the 45 minimum to ensure saturation across process and temperature variation. The MJE210TG's h_FE decreases predictably with increasing current, dropping to 10 at −5 A, which informs bias network design for wide dynamic range applications.

Does the MJE210TG have a built-in base-emitter resistor or protection diode?

No, the MJE210TG is a standard discrete PNP bipolar junction transistor with no integrated base-emitter resistor or protection diode. It consists solely of emitter, base, and collector terminals in a monolithic silicon die. External base resistors must be added to limit I_B and prevent damage during switching; a reverse-biased diode (e.g., 1N4148) is recommended across B–E if inductive turn-off stress is expected. This bare-die architecture gives full design flexibility but requires careful external biasing - unlike digital transistors, the MJE210TG offers no internal integration.

Can the MJE210TG be used in parallel configurations for higher current handling?

Parallel operation of MJE210TG devices is not recommended without individual emitter resistors and matched thermal mounting. Due to inherent h_FE and V_BE parameter spread, unequal current sharing can occur - one device may hog >70% of total current, leading to thermal runaway. If parallel use is unavoidable, use 0.1–0.5 Ω emitter resistors per device and ensure identical heatsinking. For >5 A applications, consider higher-rated alternatives like MJ15003 or dedicated MOSFETs instead of paralleling MJE210TG units.