Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics MJE2955T

Part No.:
MJE2955T
Manufacturer:
STMicroelectronics
Category:
Single Bipolar Transistors
Package:
TO-220-3
Datasheet:
AetrixMJE2955T.pdf
Description:
TRANS PNP 60V 10A TO-220
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,464

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

MJE2955T from STMicroelectronics is a complementary PNP silicon epitaxial-base power transistor in TO-220 package, designed for high-current switching and linear amplification in DC-DC converters, motor drivers, and audio output stages. It delivers 10 A collector current, 60 V VCEO, 75 W power dissipation at Tcase ≤ 25 °C, and operates up to 150 °C junction temperature.

For engineers reviewing the MJE2955T datasheet, MJE2955T pinout, MJE2955T application, or MJE2955T equivalent, key selection criteria include its negative-polarity voltage/current ratings, thermal resistance (1.66 °C/W), DC current gain (hFE = 20–70 at 4 A), saturation voltage (VCE(sat) = 1.1 V at 4 A/0.4 A), and compatibility with MJE3055T in push-pull configurations.

Technical Context

The MJE2955T is a medium-power, through-hole PNP bipolar junction transistor optimized for robust operation in industrial switching and analog amplification. Its epitaxial base structure enables stable hFE across temperature and current, while the TO-220 package provides direct heatsink mounting and low thermal resistance (Rthj-case = 1.66 °C/W).

It operates with negative polarity: VCEO = –60 V, VCBO = –70 V, IC = –10 A, and Ptot = 75 W. The device supports pulsed operation (300 µs, ≤2% duty cycle) for sustaining voltage testing and exhibits fT = 2 MHz under specified bias conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO–60 V: Maximum reverse-biased collector-emitter voltage before breakdown in common-emitter configuration.
IC–10 A: Continuous DC collector current rating at Tcase ≤ 25 °C; defines maximum load-handling capability.
Ptot75 W: Total power dissipation limit at case temperature ≤ 25 °C; determines heatsink sizing requirements.
Rthj-case1.66 °C/W: Thermal resistance from junction to case; critical for calculating junction temperature rise under load.
hFE20–70: DC current gain range at IC = 4 A, VCE = 4 V; impacts base drive design and switching speed.
VCE(sat)1.1 V (at IC = –4 A, IB = –0.4 A): Saturation voltage defining conduction loss and heat generation in switch mode.
fT2 MHz: Transition frequency at IC = –500 mA, VCE = –10 V; indicates usable bandwidth in linear amplification.

Pinout & Package

Package: TO-220 (3-lead, vertical mounting, metal tab connected to collector). Standard JEDEC outline with mechanical dimensions per STMicroelectronics datasheet revision September 2003.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)Emitter terminalCurrent exit path for PNP device; connects to positive rail in high-side switch configurations.
2 (Base)Control inputReceives negative base current to turn on; requires current-limiting resistor for safe drive.
3 (Collector)Collector terminal / Heatsink interfaceInternally connected to metal tab; must be electrically isolated from heatsink unless circuit design permits common-collector reference.

Key Features

FeatureDesign Value
Complementary pairingDesigned as matched PNP counterpart to NPN MJE3055T for symmetrical push-pull and H-bridge circuits.
High ruggednessRated for 150 °C max junction temperature and 75 W dissipation, enabling reliable operation in industrial ambient conditions.
Low saturation voltageVCE(sat) = 1.1 V at –4 A/–0.4 A reduces conduction losses and improves efficiency in switching applications.
Epitaxial base constructionEnsures stable hFE and consistent switching characteristics across temperature and current ranges.

Applications

DC-DC Converter SwitchLinear Audio Amplifier Output Stage

Use Scenario: High-current buck converter output stage operating at 24 V input, 5–12 V output, 5 A load.

IC Role / Device Role / Timing Role: PNP power switch in synchronous or complementary pair configuration, handling high-side current commutation.

Use Value: Low VCE(sat) minimizes dropout and conduction loss; TO-220 package allows direct heatsinking for sustained 5 A operation.

Use Scenario: Class-AB audio amplifier output stage delivering 10 W into 4 Ω speaker load.

IC Role / Device Role / Timing Role: Complementary PNP emitter-follower output transistor paired with MJE3055T for symmetrical signal swing.

Use Value: Matched hFE and thermal behavior with MJE3055T reduce crossover distortion; 150 °C Tj rating ensures reliability during transient peaks.

H-Bridge Motor DriverIndustrial Power Supply Regulator

Use Scenario: 24 V brushed DC motor driver with bidirectional control and 3 A stall current.

IC Role / Device Role / Timing Role: Upper-leg PNP switch in half-bridge leg, controlled via level-shifted base drive.

Use Value: –60 V VCEO provides margin against inductive kickback; 10 A IC rating accommodates short-term stall currents.

Use Scenario: Linear regulator pass element in 48 V to 12 V, 2 A industrial supply with thermal foldback protection.

IC Role / Device Role / Timing Role: Series pass transistor dissipating up to 72 W under worst-case dropout (36 V × 2 A).

Use Value: 75 W Ptot and 1.66 °C/W Rthj-case enable stable operation with moderate heatsinking; 150 °C Tj supports overtemperature tolerance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TIP2955VCEO = –60 V, IC = –10 A, but hFE min = 20 at IC = –4 A - identical gain spec; Rthj-case = 1.67 °C/W vs. 1.66 °C/W.No functional difference in switching or linear use; pinout and footprint identical to TO-220.Drop-in replacement where second-source qualification is required; same thermal and electrical envelope.
2N6292VCEO = –60 V, IC = –12 A, Ptot = 115 W - higher power rating; hFE = 20–100 at IC = –4 A.Higher current/power capability suits heavier loads; larger die may affect switching speed and thermal response.Select when >10 A peak current or >75 W dissipation is needed; verify base drive adequacy for higher hFE spread.

Compared with TIP2955 and 2N6292, the MJE2955T offers tighter thermal resistance matching with its complementary NPN partner (MJE3055T), making it preferred for balanced push-pull designs where thermal tracking and gain symmetry are critical.

Availability

MJE2955T is available at Aetrix Electronics and suitable for DC-DC converters, audio amplifiers, motor drivers, and linear power supplies requiring stable component supply and long-lifecycle support.

Supply support for MJE2955T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, microcontrollers, and discrete devices for industrial, automotive, and consumer markets.

The MJE2955T belongs to ST's legacy power bipolar transistor family, engineered for cost-effective, thermally robust solutions in industrial switching and analog amplification where reliability and manufacturability are prioritized.

FAQ

Is the MJE2955T pin-compatible with the MJE3055T?

No - they are complementary devices with opposite polarity: MJE2955T is PNP (Emitter=Pin1, Base=Pin2, Collector=Pin3), while MJE3055T is NPN (Collector=Pin1, Base=Pin2, Emitter=Pin3) in the same TO-220 package. Their pinouts are mirrored, not identical.

What is the maximum safe operating area (SOA) limitation for continuous DC operation?

At Tcase = 25 °C, the MJE2955T supports up to 10 A at VCE ≤ 7.5 V in DC mode. Above that voltage, derating applies per the SOA curve in the datasheet; at 60 V, maximum continuous IC drops to ~1.25 A to stay within 75 W Ptot.

Can the metal tab be electrically connected to the heatsink without isolation?

No - the metal tab is internally connected to the collector terminal. Direct mounting to a grounded heatsink creates a short unless the collector node is at system ground potential. Electrical isolation using mica washers or sil-pad insulators is required in most configurations.

Does the MJE2955T require a base resistor when driven by a microcontroller GPIO?

Yes - driving the base directly from a 3.3 V or 5 V GPIO risks excessive base current. A series resistor (e.g., 220 Ω for ~15 mA IB at 5 V) is required to limit IB within the 6 A absolute maximum and ensure proper saturation at target IC.

MJE2955T Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
10 A
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
8V @ 3.3A, 10A
Current - Collector Cutoff (Max):
700µA
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 4V
Power - Max:
75 W
Frequency - Transition:
2MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

MJE2955T FAQ

1.How can I place an order for MJE2955T through Aetrix?

Please submit a Request for Quotation (RFQ) for MJE2955T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJE2955T reliable?

The price and inventory of MJE2955T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJE2955T is usually 5 days.

3.What payment methods are accepted for MJE2955T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJE2955T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJE2955T?

MJE2955T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJE2955T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJE2955T?

For technical support, including MJE2955T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJE2955T requirements.

6.How does Aetrix verify that MJE2955T is sourced from the original manufacturer or authorized distributors?

All MJE2955T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJE2955T meets industry standards.

7.What is the process for return or replacement of MJE2955T?

All MJE2955T units undergo pre-shipment inspection (PSI). If there is an issue with MJE2955T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJE2955T part is unused and in its original packaging.

Return procedure for MJE2955T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

MJE2955T Tags

  • MJE2955T
  • MJE2955T PDF
  • MJE2955T Datasheet
  • MJE2955T Specifications
  • MJE2955T Images
  • STMicroelectronics
  • STMicroelectronics MJE2955T
  • Buy MJE2955T
  • MJE2955T Price
  • MJE2955T Distributor
  • MJE2955T Supplier
  • MJE2955T Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER