My Inquiry
My Account
onsemi MJE4343G
- Part No.:
- MJE4343G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-247-3
- Datasheet:
-
MJE4343G.pdf
- Description:
- TRANS NPN 160V 16A TO-247-3
- Quantity:
- Payment:
- Shipping:
Inventory:42
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
MJE4343G from onsemi is an NPN high-voltage, high-power bipolar junction transistor designed for linear audio amplifier output stages and high-voltage DC-DC switching regulator switches. It delivers 16 A continuous collector current, sustains 160 Vdc collector-emitter voltage, and exhibits 35 (typ) DC current gain at 8.0 Adc - enabling robust Class AB audio output and hard-switched flyback/forward converter operation.
For engineers reviewing the MJE4343G datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area under reverse-bias turn-off, thermal resistance of 1.0 °C/W (junction-to-case), saturation voltage ≤2.0 V at 8.0 Adc, and Pb-free SOT-93 (TO-218) or TO-247 package compatibility with high-power heatsinking requirements.
Technical Context
The MJE4343G operates as a silicon planar epitaxial NPN power transistor with complementary PNP pairing (MJE4353G). Its design targets linear amplification and hard-switching applications where secondary breakdown immunity and reverse-bias SOA compliance are critical - evidenced by RBSOA curves validated under clamped conditions to avoid avalanche stress.
It features a low 1.0 °C/W thermal resistance (RθJC) and supports pulse operation up to 20 A peak with 10% duty cycle. Electrical behavior is characterized at TC = 25 °C, with hFE specified across 8.0–16 A and VCE(sat) tightly bounded at ≤2.0 V (IC = 8.0 A, IB = 800 mA), ensuring predictable conduction loss in high-current paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO(sus) | 160 Vdc - enables use in 100–140 VRMS audio supply rails and ≥120 V input DC-DC converters without derating. |
| IC (Continuous) | 16 Adc - supports high-fidelity audio output stages delivering ≥100 W into 4 Ω loads and primary-side switching in ≥300 W SMPS. |
| VCE(sat) (Max) | 2.0 Vdc @ IC = 8.0 Adc - limits conduction loss to ≤16 W per device in saturated switch mode, reducing heatsink requirements. |
| hFE (Typ) | 35 @ IC = 8.0 Adc - ensures stable base drive design with moderate IB ≈ 230 mA, easing driver stage complexity. |
| RθJC | 1.0 °C/W - allows direct mounting to heatsinks achieving ≤125 °C junction temperature at 125 W dissipation with 25 °C case temp. |
| fT | 1.0 MHz @ IC = 1.0 Adc - sufficient for audio frequency amplification and <50 kHz PWM switching, not suitable for MHz-range SMPS. |
| Cob | 800 pF @ VCB = 10 Vdc - impacts switching speed and EMI in hard-switched topologies; requires gate/base drive optimization. |
Pinout & Package
SOT-93 (TO-218) metal-can package with isolated collector tab; electrically insulated mounting surface required. Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter, Pin 4 = Collector (dual-collector configuration for enhanced current handling and thermal path).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal requiring ~230 mA DC base current to fully saturate at 8 A collector current; low-impedance drive essential. |
| 2 | Collector | Main high-current output node; electrically connected to metal tab - must be isolated from heatsink unless using insulating washer. |
| 3 | Emitter | Reference node for emitter-follower or common-emitter configurations; carries full load current and defines ground reference in many designs. |
| 4 | Collector | Second collector terminal tied internally to Pin 2 - provides parallel current path and improved thermal spreading across package base. |
Key Features
| Feature | Design Value |
|---|---|
| High VCEO(sus) | 160 Vdc rating enables direct use in 120 VAC-derived supplies and industrial 110 VDC bus systems without series stacking. |
| Low RθJC | 1.0 °C/W thermal resistance allows >100 W continuous dissipation with modest heatsinking - critical for compact audio amplifier chassis. |
| Pb-Free Construction | RoHS-compliant SOT-93 package (marked "G") meets global environmental regulations without compromising thermal or electrical performance. |
| Reverse Bias SOA | Validated RBSOA up to 160 V / 16 A at TJ = 100 °C ensures reliable turn-off under inductive load conditions with active clamping. |
| Secondary Breakdown Immunity | SOA curves defined for dc and pulsed operation prevent destructive localized heating during transient overloads in linear amplifier output stages. |
Applications
| High-Fidelity Audio Amplifiers | Industrial DC-DC Switching Regulators |
|---|---|
|
Use Scenario: Output stage in discrete Class AB stereo power amplifiers delivering 50–150 W per channel into 4–8 Ω speakers. IC Role / Device Role / Timing Role: NPN power switch in complementary push-pull pair; handles full audio-band current swing with minimal crossover distortion. Use Value: 160 V VCEO(sus) supports ±70 V rail supplies; 35 hFE ensures stable biasing; dual-collector pinout improves thermal coupling to heatsink. |
Use Scenario: Primary-side switch in 200–500 W offline forward or flyback converters for industrial PLC power supplies. IC Role / Device Role / Timing Role: Hard-switched NPN transistor controlling energy transfer from 100–400 VDC input bus to transformer primary. Use Value: 16 A continuous rating accommodates peak currents in 300 W designs; RBSOA compliance prevents failure during MOSFET-replacement retrofit. |
| High-Voltage Linear Regulators | Motor Drive H-Bridge Legs |
|
Use Scenario: Pass element in adjustable high-voltage linear regulators powering analog instrumentation or RF bias networks. IC Role / Device Role / Timing Role: Series pass transistor operating in active region; dissipates variable power based on load and input-output differential. Use Value: 125 W TC = 25 °C power rating and 1.0 °C/W RθJC enable regulated 100 V outputs at 1 A with forced-air cooling. |
Use Scenario: Low-side switch in 48–100 VDC brushed motor drives for automated machinery and material handling systems. IC Role / Device Role / Timing Role: High-current NPN switch in half-bridge configuration; commutates motor current with fast turn-on/turn-off control. Use Value: 2.0 V VCE(sat) minimizes I²R losses at 10–15 A motor stall current; dual-collector layout reduces bond-wire current density. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage NPN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STMicroelectronics BUW12A | Lower VCEO = 120 Vdc; higher VCE(sat) = 2.5 V @ 8 A; same SOT-93 package. | Restricted to ≤100 VDC systems; less efficient in high-voltage SMPS due to higher conduction loss. | Select when cost sensitivity outweighs 40 V headroom requirement and thermal margin is ample. |
| ON Semiconductor MJE13009 | Higher VCEO = 400 Vdc but lower IC = 12 A; fT = 4 MHz; TO-247 only. | Better for >200 V applications but unsuitable for 16 A continuous audio output; faster switching but poorer linearity. | Prefer for flyback snubberless designs above 250 V; avoid in high-fidelity audio due to reduced hFE stability at low frequencies. |
Compared with BUW12A and MJE13009, the MJE4343G uniquely balances 160 V sustain voltage, 16 A current capability, and audio-grade hFE linearity - making it optimal for mid-voltage, high-current linear and switching applications where both SOA integrity and thermal efficiency are critical.
Availability
MJE4343G is available at Aetrix Electronics and suitable for high-fidelity audio amplifiers, industrial DC-DC switching regulators, and high-voltage linear regulators requiring stable component supply, long-lifecycle support, and traceable Pb-free sourcing.
Supply support for MJE4343G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT markets.
The MJE4343G belongs to onsemi's legacy high-power bipolar transistor family, engineered specifically for ruggedized audio output stages and high-voltage switching power conversion where SOA reliability and thermal performance are non-negotiable.
FAQ
What is the maximum continuous collector current rating for the MJE4343G?
The MJE4343G is rated for 16 Adc continuous collector current at TC = 25 °C. This rating assumes proper heatsinking to maintain case temperature within limits; derating applies above 25 °C per the power derating curve in Figure 1. At TC = 100 °C, the usable continuous current drops to approximately 8 A. The MJE4343G also supports 20 A peak current under pulsed conditions (5 s, 10% duty cycle), as confirmed in the Maximum Ratings table.
Does the MJE4343G have a dual-collector configuration, and how does it affect PCB layout?
Yes, the MJE4343G in SOT-93 (TO-218) package has four terminals: Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter, and Pin 4 = Collector - forming a dual-collector structure. This design enhances current sharing and thermal spreading across the metal tab. For PCB layout, both collector pins must be routed to the same high-current net, and the metal tab must be electrically isolated from the heatsink unless using a thermally conductive but electrically insulating pad - critical to avoid short circuits in grounded-chassis systems.
Is the MJE4343G suitable for switching applications above 100 kHz?
No, the MJE4343G is not recommended for switching above 100 kHz. Its fT is specified at 1.0 MHz under low-current conditions (IC = 1.0 A), but practical switching performance degrades significantly above 50 kHz due to high Cob (800 pF) and relatively slow turn-on/turn-off times documented in Figures 3–4. The MJE4343G is optimized for audio-frequency amplification and sub-50 kHz hard-switched power conversion - for higher-frequency SMPS, consider MOSFETs or RF-optimized BJTs instead of the MJE4343G.
How does the Reverse Bias Safe Operating Area (RBSOA) of the MJE4343G impact its use in inductive switching circuits?
The MJE4343G's RBSOA - specified up to 160 V and 16 A at TJ = 100 °C in Figure 11 - defines the maximum simultaneous voltage and current the device can withstand during turn-off with reverse-biased base-emitter junction. In inductive switching (e.g., motor drives or flyback converters), this rating prevents second breakdown during the voltage rise phase. Designers must ensure clamping or snubbing keeps the operating point within the RBSOA boundary; exceeding it risks immediate parametric shift or catastrophic failure. This makes the MJE4343G viable for clamped inductive switching but unsuitable for unclamped avalanche operation.
What is the significance of the "G" suffix in MJE4343G, and does it affect electrical performance?
The "G" suffix in MJE4343G denotes a Pb-free (RoHS-compliant) version of the device, confirmed in the Ordering Information section and marking diagram. It indicates substitution of lead-based solder with lead-free alternatives in the internal die attach and external terminations. Electrical and thermal specifications - including VCEO(sus), IC, RθJC, and hFE - are identical to the legacy non-Pb-free variant. The "G" suffix has no impact on performance; it solely reflects environmental compliance and is required for products sold in EU, China, and other RoHS-regulated markets.
MJE4343G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 16 A
- Voltage - Collector Emitter Breakdown (Max):
- 160 V
- Vce Saturation (Max) @ Ib, Ic:
- 3.5V @ 2A, 16A
- Current - Collector Cutoff (Max):
- 750µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 15 @ 8A, 2V
- Power - Max:
- 125 W
- Frequency - Transition:
- 1MHz
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-3
MJE4343G FAQ
1.How can I place an order for MJE4343G through Aetrix?
Please submit a Request for Quotation (RFQ) for MJE4343G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MJE4343G reliable?
The price and inventory of MJE4343G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJE4343G is usually 5 days.
3.What payment methods are accepted for MJE4343G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJE4343G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MJE4343G?
MJE4343G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MJE4343G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MJE4343G?
For technical support, including MJE4343G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJE4343G requirements.
6.How does Aetrix verify that MJE4343G is sourced from the original manufacturer or authorized distributors?
All MJE4343G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJE4343G meets industry standards.
7.What is the process for return or replacement of MJE4343G?
All MJE4343G units undergo pre-shipment inspection (PSI). If there is an issue with MJE4343G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MJE4343G part is unused and in its original packaging.
Return procedure for MJE4343G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MJE4343G Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
