onsemi MJE5730G

Overview

MJE5730G from onsemi is a high-voltage PNP silicon plastic power transistor in TO-220 package, rated for 300 V_CEO, 1.0 A continuous collector current, and 40 W total device dissipation at T_C = 25°C. It serves as a line-operated audio output amplifier stage and switch-mode power supply driver with robust unclamped inductive load energy handling (20 mJ).

For engineers reviewing the MJE5730G datasheet, pinout, applications, or equivalent options, key selection criteria include its 300 V_CEO rating, TO-220 thermal resistance (R_JC = 3.125 °C/W), PNP complementarity to TIP47–TIP50 series, and Pb-free RoHS-compliant construction.

Technical Context

This device operates as a medium-power PNP bipolar junction transistor optimized for switching and linear amplification in high-voltage DC circuits. Its design supports stable operation across −65°C to +150°C junction temperature range and features low saturation voltage (V_CE(sat) ≤ 1.0 V at I_C = 1.0 A, I_B = 0.2 A) and moderate gain bandwidth product (f_T ≥ 10 MHz).

Thermal performance is defined by R_JC = 3.125 °C/W and R_JA = 62.5 °C/W, enabling effective heatsink-coupled power handling. Safe operating area (SOA) curves account for second breakdown limits, with pulse energy capability validated up to 20 mJ under unclamped inductive load conditions.

Key Specifications

Pinout & Package

Package: TO-220 (Case 221A-09, Style 1), plastic, Pb-free, RoHS-compliant, with metal tab electrically connected to collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage power transistor applications.

Compared with MJE5730G, MJE5731G offers extended voltage headroom while maintaining full mechanical and thermal compatibility, whereas TIP42C provides lower-cost operation below 100 V but requires board-level redesign due to non-matching pin configuration and reduced voltage rating.

Availability

MJE5730G is available at Aetrix Electronics and suitable for line-operated audio amplifiers, switch-mode power supply drivers, and high-voltage relay/solenoid control applications requiring stable component supply and long-lifecycle availability.

Supply support for MJE5730G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MJE5730G belongs to onsemi's high-voltage discrete transistor family designed specifically for robust switching and linear amplification in mains-connected equipment and industrial controls.

FAQ

What is the maximum collector-emitter voltage rating for the MJE5730G?

The MJE5730G has a maximum collector-emitter sustaining voltage (V_CEO(sus)) of 300 Vdc at I_C = 30 mA and I_B = 0. This rating is verified under pulsed test conditions (pulse width ≤ 300 µs, duty cycle ≤ 2.0%) and defines the upper limit for safe DC or peak AC voltage operation. Exceeding this voltage risks avalanche breakdown and permanent device damage. The MJE5730G must be used within this limit in all applications including audio output stages and SMPS drivers.

Is the MJE5730G pin-compatible with the TIP42 series?

No, the MJE5730G is not pin-compatible with the TIP42 series. While both use TO-220 packages, the MJE5730G (Style 1) has Base–Collector–Emitter–Collector pinout, whereas TIP42C uses Emitter–Base–Collector. Swapping them without PCB modification will result in incorrect biasing and immediate failure. The MJE5730G is explicitly designed as a PNP complement to the TIP47–TIP50 series-not the TIP41–TIP42 family-and shares pinout only with those designated complements.

Does the MJE5730G require a heatsink in normal operation?

Yes, the MJE5730G requires a heatsink for any sustained power dissipation above ~2–3 W. With R_JC = 3.125 °C/W and R_JA = 62.5 °C/W, even at 10 W dissipation and ambient 25°C, junction temperature would exceed 100°C without thermal management. The metal tab is electrically connected to the collector, so isolation hardware (mica washers, sil-pad) must be used if mounting to a grounded heatsink. Thermal design must account for both steady-state and transient SOA limits.

What does the "G" suffix indicate in MJE5730G?

The "G" suffix in MJE5730G denotes a Pb-free, RoHS-compliant packaging variant per onsemi's standard nomenclature. It confirms the device meets EU Directive 2011/65/EU requirements and uses lead-free terminations and molding compound. This designation appears in the ordering information and marking diagram, and applies to all three variants (MJE5730G, MJE5731G, MJE5731AG). No functional or electrical differences exist between "G" and legacy non-Pb-free versions beyond environmental compliance.

Can the MJE5730G be used in linear regulator applications?

Yes, the MJE5730G is suitable as a series pass element in high-voltage linear regulators, provided thermal design accommodates its 40 W dissipation limit at T_C = 25°C and derating curve (0.32 W/°C above 25°C). Its 300 V_CEO rating supports input voltages up to ~260 VDC after rectification and filtering. However, efficiency is inherently low compared to switching alternatives, and SOA must be verified for worst-case dropout and load current combinations using Figure 5 from the datasheet.