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onsemi MJE5731G

Part No.:
MJE5731G
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-220-3
Datasheet:
AetrixMJE5731G.pdf
Description:
TRANS PNP 350V 1A TO-220
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:249

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Product details

Overview

MJE5731G from onsemi is a high-voltage PNP silicon plastic power transistor in TO-220 package, rated for 350 VCEO, 1.0 A continuous collector current, and 40 W total device dissipation at TC = 25°C. It serves as a line-operated audio output amplifier stage and switch-mode power supply driver, with verified safe operating area up to 200 V and 1 A under resistive switching conditions.

For engineers reviewing the MJE5731G datasheet, pinout, applications, or equivalent options, this page delivers confirmed electrical ratings, thermal derating behavior, SOA limits, switching timing data (tr/tf < 15 ns), and validated PNP complementarity to TIP47–TIP50 series devices.

Technical Context

This device operates as a medium-power, high-voltage PNP bipolar junction transistor optimized for linear amplification and hard-switching applications. Its DC current gain (hFE) ranges from 10 to 150 at IC = 1.0 A, VCE = 10 V, and it sustains 350 V in open-base configuration with IC = 30 mA.

Thermal design is constrained by RJC = 3.125 °C/W and RJA = 62.5 °C/W, requiring heatsinking for sustained operation above ~1.5 W ambient dissipation. Unclamped inductive load energy rating is 20 mJ, validated per Figure 10 test circuit with 100 mH load and 20 V supply.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO350 Vdc - Maximum collector-emitter voltage before breakdown with base open; defines usable voltage headroom in SMPS and audio output stages.
IC (continuous)1.0 Adc - Continuous collector current limit; sets maximum linear or switching load current without thermal runaway at TC ≤ 25°C.
PD @ TC = 25°C40 W - Total device dissipation capability with case temperature held at 25°C; requires mechanical heatsink interface for real-world use.
hFE @ IC = 1.0 A10–150 - DC current gain range at full-rated current; supports stable biasing across production lots in Class AB audio drivers.
VCE(sat) @ IC/IB = 5≤1.0 Vdc - Saturation voltage at forced β = 5; determines conduction loss and thermal load in switching mode.
fT10 MHz - Current gain-bandwidth product at IC = 0.2 A, VCE = 10 V; confirms suitability for audio-frequency and low-MHz switching control.
E (unclamped)20 mJ - Energy handling capability under inductive turn-off; enables robust operation in relay drivers and flyback snubber circuits.

Pinout & Package

Package: TO-220 (Case 221A-09, Style 1), Pb-free, with metal tab electrically connected to collector (pins 2 and 4).

Pin/Terminal Circuit Role Design Meaning
1BaseCurrent-controlled input terminal; requires ≥0.2 A base drive for full saturation at 1.0 A collector current.
2CollectorMain high-side current path; electrically tied to metal tab and pin 4; must be isolated from heatsink unless referenced to system ground.
3EmitterCommon emitter node; connects to positive rail in high-side switch configurations or output coupling capacitor in audio amplifiers.
4CollectorSecondary collector connection; provides redundant current path and improved thermal conduction via dual-pin layout.

Key Features

Feature Design Value
TO-220 plastic packageIndustry-standard outline with integrated heatsink tab; enables direct mounting to aluminum chassis or external heatsinks without insulating hardware when collector is grounded.
PNP complement to TIP47–TIP50Direct functional pairing with NPN counterparts for push-pull audio output stages and complementary SMPS half-bridges.
RJC = 3.125 °C/WLow junction-to-case thermal resistance ensures efficient heat transfer to heatsink; supports >25 W continuous dissipation with 10°C/W heatsink.
Unclamped inductive energy: 20 mJValidated energy absorption under worst-case inductive turn-off; eliminates need for external clamp diodes in many relay and solenoid drivers.
Pb-free / RoHS compliantMeets EU Directive 2011/65/EU; compatible with lead-free reflow profiles and industrial recycling requirements.

Applications

Audio Output Amplifier Switch-Mode Power Supply Driver

Use Scenario: Medium-power Class AB audio output stage in consumer stereo receivers and active speaker systems operating from ±35 V rails.

IC Role / Device Role / Timing Role: PNP output transistor delivering 10–20 W into 4–8 Ω loads with low crossover distortion and thermal stability.

Use Value: High VCEO margin prevents breakdown during transient overloads; hFE consistency ensures predictable bias point across temperature.

Use Scenario: High-side switch in offline flyback or forward converter gate drivers, controlling MOSFET/IGBT bases at 100–500 kHz.

IC Role / Device Role / Timing Role: Fast-switching PNP driver providing 0.5–1.0 A peak base current with tr/tf < 15 ns to minimize switching losses.

Use Value: Verified 20 mJ unclamped inductive energy rating allows direct drive of transformer-coupled gate networks without snubbers.

Line-Operated Power Amplifier Industrial Relay/Solenoid Driver

Use Scenario: Mains-connected 120/230 VAC-powered audio amplifier output stage where high VCEO prevents breakdown during AC line surges.

IC Role / Device Role / Timing Role: Primary high-voltage PNP output device in transformerless output topology, handling peak voltages >300 V.

Use Value: 350 VCEO rating exceeds EN 61000-4-5 surge immunity requirements for 230 VAC systems with 2 kV line-earth transients.

Use Scenario: DC-controlled actuator driver for 24–48 V industrial relays, pneumatic valves, and latching solenoids in PLC I/O modules.

IC Role / Device Role / Timing Role: High-current, high-voltage switch interfacing microcontroller GPIO to inductive loads with flyback protection.

Use Value: Dual-collector pin (2 & 4) lowers effective bond wire resistance, improving reliability during repeated 100 ms inductive turn-off events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage power transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
MJE5731AVCEO = 375 V, VCB = 375 V - +25 V higher blocking rating than MJE5731G; otherwise identical pinout, gain, and thermal specs.Preferred in 230 VAC systems with elevated surge requirements (IEC 61000-4-5 Level 4); same PCB layout but higher voltage margin.Select MJE5731A when designing for >350 V transient tolerance; no layout change required.
TIP42CVCEO = 100 V, IC = 6 A, PD = 65 W - lower voltage rating but higher current and power; TO-220 package with different pinout (Emitter-Base-Collector).Suitable only for low-voltage (<100 V) switching or linear applications; not interchangeable due to pinout mismatch and voltage limitation.Use TIP42C only in legacy 24–48 V designs; MJE5731G is not a drop-in replacement.

Compared with MJE5731A, the MJE5731G offers 25 V lower VCEO but identical thermal performance and switching speed-ideal for cost-sensitive 350 V designs. Versus TIP42C, it trades current capacity for voltage headroom and uses a distinct pinout, making it unsuitable for direct substitution in existing TIP42C layouts.

Availability

MJE5731G is available at Aetrix Electronics and suitable for audio output amplifiers, switch-mode power supply drivers, and industrial relay/solenoid drivers requiring stable component supply, long-term manufacturability, and RoHS-compliant packaging.

Supply support for MJE5731G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The MJE5731G belongs to onsemi's high-voltage discrete transistor family designed specifically for robust line-operated audio amplification and reliable switching in off-line power conversion topologies.

FAQ

What is the maximum collector-emitter voltage rating for the MJE5731G?

The MJE5731G has a maximum collector-emitter sustaining voltage (VCEO(sus)) of 350 Vdc at IC = 30 mA and IB = 0. This rating is confirmed in the "OFF CHARACTERISTICS" table of the official onsemi datasheet (Rev. 9, October 2024) and defines the absolute upper limit for safe DC operation without breakdown. Exceeding this voltage risks irreversible device failure.

Is the MJE5731G pin-compatible with the TIP42 series?

No, the MJE5731G is not pin-compatible with the TIP42 series. While both use TO-220 packages, the MJE5731G (Style 1) has Base–Collector–Emitter–Collector pinout (1–2–3–4), whereas TIP42C uses Emitter–Base–Collector (1–2–3). Swapping them would cause immediate circuit malfunction or damage due to reversed polarity and misconnected terminals.

What is the thermal resistance from junction to case for the MJE5731G?

The MJE5731G has a maximum thermal resistance from junction to case (RJC) of 3.125 °C/W, as specified in the "THERMAL CHARACTERISTICS" section of the onsemi datasheet. This value assumes proper mounting with thermal compound and a flat, clean heatsink surface; actual performance depends on mechanical interface quality and heatsink thermal mass.

Can the MJE5731G be used in inductive load switching applications?

Yes, the MJE5731G is qualified for inductive load switching with an unclamped inductive load energy rating of 20 mJ, validated using the test circuit in Figure 10 of the datasheet. This makes it suitable for driving relays, solenoids, and transformer-coupled gate drivers-provided external clamping or snubbing is added for energy levels exceeding 20 mJ.

Does the MJE5731G meet RoHS compliance requirements?

Yes, the MJE5731G is Pb-free and RoHS compliant, as explicitly stated in the "Features" section and "ORDERING INFORMATION" page of the onsemi datasheet. The "G" suffix denotes the Pb-free package variant, and full compliance documentation is available in onsemi's Soldering and Mounting Techniques Reference Manual (SOLDERRM/D).

MJE5731G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
350 V
Vce Saturation (Max) @ Ib, Ic:
1V @ 200mA, 1A
Current - Collector Cutoff (Max):
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 300mA, 10V
Power - Max:
40 W
Frequency - Transition:
10MHz
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

MJE5731G FAQ

1.How can I place an order for MJE5731G through Aetrix?

Please submit a Request for Quotation (RFQ) for MJE5731G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJE5731G reliable?

The price and inventory of MJE5731G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJE5731G is usually 5 days.

3.What payment methods are accepted for MJE5731G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJE5731G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJE5731G?

MJE5731G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJE5731G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJE5731G?

For technical support, including MJE5731G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJE5731G requirements.

6.How does Aetrix verify that MJE5731G is sourced from the original manufacturer or authorized distributors?

All MJE5731G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJE5731G meets industry standards.

7.What is the process for return or replacement of MJE5731G?

All MJE5731G units undergo pre-shipment inspection (PSI). If there is an issue with MJE5731G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJE5731G part is unused and in its original packaging.

Return procedure for MJE5731G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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