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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MJE5850G

Name: MJE5850G
Brand: onsemi
SKU: MJE5850G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MJE5850G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: MJE5850G.pdf

Description:: TRANS PNP 300V 8A TO-220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MJE5850G from onsemi is a PNP silicon power transistor designed for high-voltage, high-speed switching in inductive circuits-specifically line-operated switch-mode applications. It delivers 8 A continuous collector current, 300 V collector-emitter sustaining voltage (V_CEO(sus)), and fast fall time (t_f = 0.11 µs) under clamped inductive load conditions at 100°C.

For engineers reviewing the MJE5850G datasheet, pinout, applications, or equivalent options, key selection criteria include its reverse-biased SOA performance at 100°C, guaranteed inductive switching times (t_sv, t_c), saturation voltage (V_CE(sat) ≤ 2.0 V at I_C = 4 A/I_B = 1 A), thermal resistance (R_θJC = 1.25°C/W), and TO-220 package compatibility with heatsink mounting.

Technical Context

The MJE5850G employs a rugged PNP bipolar junction structure optimized for fast turn-off in high-dV/dt, high-di/dt inductive switching environments. Its design emphasizes controlled second breakdown behavior and reverse-biased safe operating area (RBSOA) integrity during clamped turn-off at elevated junction temperatures up to 150°C.

It operates with base-emitter reverse biasing (V_BE(off) = 5 V) to minimize storage time, supports forced h_FE = 4 operation, and maintains specified performance-including leakage (I_CEV ≤ 0.5 mA at 100°C) and saturation voltages-at 100°C, enabling reliable use in thermally demanding switch-mode power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO(sus)	300 V - Sustains 300 V with I_C = 10 mA and open base; defines maximum usable voltage in non-avalanche switching
I_C (continuous)	8.0 A - Continuous collector current rating at T_C = 25°C; derates linearly above 25°C (0.64 W/°C)
V_CE(sat)	≤2.0 V at I_C = 4 A / I_B = 1 A - Low saturation voltage minimizes conduction loss in high-current switching paths
t_f (resistive)	0.11–0.5 µs - Fast fall time enables high-frequency operation (>100 kHz) in resistive-switching topologies
t_sv (inductive, 100°C)	0.8–3.0 µs - Voltage storage time under clamped inductive load at 100°C; critical for SOA-limited designs
R_θJC	1.25°C/W - Junction-to-case thermal resistance enables direct heatsink mounting for efficient power dissipation
T_J range	−65°C to +150°C - Wide operating junction temperature range supports industrial and high-ambient applications

Pinout & Package

Package: TO-220 (Case 221A-09, Style 1), 3-lead, Pb-free, with metal tab electrically connected to collector. Mounting hole allows mechanical fixation and thermal coupling to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal; requires negative drive relative to emitter to forward-bias PNP junction; reverse bias (−5 V) reduces storage time
2	Collector	Main high-current, high-voltage output terminal; internally connected to metal tab for low-inductance, low-thermal-resistance path to heatsink
3	Emiter	Power return node; common reference for base drive and load connection; must be low-impedance for stable switching

Key Features

Feature	Design Value
Clamped inductive SOA at 100°C	Guaranteed RBSOA curves (Figure 13) enable reliable operation in flyback, forward, and deflection circuits without avalanche stress
Fast turn-off with reverse base bias	Storage time (t_sv) and crossover time (t_c) specified at V_BE(off) = 5 V, reducing switching loss by minimizing overlap conduction
High-temperature parameter stability	Saturation voltage, leakage, and switching times validated at 100°C-critical for compact, unventilated power supply designs
Complementary pairing	Designed as PNP complement to MJE13007 series NPN transistors, enabling matched push-pull and half-bridge implementations
Pb-free and RoHS compliant	Meets environmental compliance requirements for industrial and consumer electronics without compromising thermal or electrical performance

Applications

Switch-Mode Power Supplies	Line-Operated Inverters
Use Scenario: Primary-side switching in offline 50/60 Hz input AC-DC converters delivering 100–500 W. IC Role / Device Role / Timing Role: High-voltage PNP switch controlling energy transfer through transformer primary winding during flyback or forward topology operation. Use Value: 300 V V_CEO(sus) and RBSOA-rated turn-off support direct rectified mains operation without external snubbers in cost-sensitive designs.	Use Scenario: DC-to-AC conversion in uninterruptible power supplies (UPS) and solar micro-inverters with 230 VAC output. IC Role / Device Role / Timing Role: High-side PNP switch in half-bridge or push-pull output stage driving transformer-coupled H-bridge outputs. Use Value: Matched complementary behavior with MJE13007 series enables symmetrical drive timing and balanced conduction losses across both legs.
Solenoid & Relay Drivers	Horizontal Deflection Circuits
Use Scenario: High-energy pulse actuation of industrial solenoids and contactors requiring rapid de-energization. IC Role / Device Role / Timing Role: Inductive load switch with active clamp control; turns off against back-EMF while limiting V_CE peak. Use Value: Guaranteed t_sv and t_c at 100°C ensure consistent release timing and coil lifetime even under sustained duty cycles.	Use Scenario: Horizontal output stage in CRT-based monitors and legacy test equipment requiring precise 15.625 kHz sawtooth current ramp. IC Role / Device Role / Timing Role: High-speed PNP switch commutating flyback transformer current to generate retrace pulse and linearity correction. Use Value: Fast fall time (t_f ≤ 0.5 µs) and low C_ob (270 pF) minimize retrace distortion and EMI generation in analog video systems.

Switch-Mode Power Supplies

Line-Operated Inverters

Use Scenario: Primary-side switching in offline 50/60 Hz input AC-DC converters delivering 100–500 W.

IC Role / Device Role / Timing Role: High-voltage PNP switch controlling energy transfer through transformer primary winding during flyback or forward topology operation.

Use Value: 300 V V_CEO(sus) and RBSOA-rated turn-off support direct rectified mains operation without external snubbers in cost-sensitive designs.

Use Scenario: DC-to-AC conversion in uninterruptible power supplies (UPS) and solar micro-inverters with 230 VAC output.

IC Role / Device Role / Timing Role: High-side PNP switch in half-bridge or push-pull output stage driving transformer-coupled H-bridge outputs.

Use Value: Matched complementary behavior with MJE13007 series enables symmetrical drive timing and balanced conduction losses across both legs.

Solenoid & Relay Drivers

Horizontal Deflection Circuits

Use Scenario: High-energy pulse actuation of industrial solenoids and contactors requiring rapid de-energization.

IC Role / Device Role / Timing Role: Inductive load switch with active clamp control; turns off against back-EMF while limiting V_CE peak.

Use Value: Guaranteed t_sv and t_c at 100°C ensure consistent release timing and coil lifetime even under sustained duty cycles.

Use Scenario: Horizontal output stage in CRT-based monitors and legacy test equipment requiring precise 15.625 kHz sawtooth current ramp.

IC Role / Device Role / Timing Role: High-speed PNP switch commutating flyback transformer current to generate retrace pulse and linearity correction.

Use Value: Fast fall time (t_f ≤ 0.5 µs) and low C_ob (270 pF) minimize retrace distortion and EMI generation in analog video systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJE5851G	Higher V_CEO(sus) = 350 V; otherwise identical pinout, package, and switching specs	Preferred where higher mains surge margin or 277 VAC input is required	Select MJE5851G when system-level overvoltage testing exceeds 300 V or long-term reliability at >280 V DC is mandated
BDW53C	Lower V_CEO(sus) = 100 V; higher h_FE (min 20); TO-220 package but different pinout (Emitter-Base-Collector)	Suitable only for low-voltage DC-DC converters (<100 V bus), not line-operated designs	Use BDW53C only in isolated low-voltage secondary-side switching; not a drop-in replacement due to pinout and voltage mismatch

Compared with MJE5850G, MJE5851G offers extended voltage headroom without layout change, while BDW53C provides higher DC gain but fails to meet the 300 V+ requirement and requires PCB redesign due to incompatible pin assignment.

Availability

MJE5850G is available at Aetrix Electronics and suitable for switch-mode power supplies, line-operated inverters, and horizontal deflection circuits requiring stable component supply, long-term BOM continuity, and RoHS-compliant manufacturing.

Supply support for MJE5850G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The MJE5850G belongs to onsemi's high-voltage bipolar power transistor product line, engineered specifically for robust, thermally stable switching in line-powered industrial and consumer power conversion systems.

FAQ

What is the maximum junction temperature specification for the MJE5850G?

The MJE5850G has a specified operating junction temperature range of −65°C to +150°C. Electrical characteristics-including saturation voltage, leakage current, and switching times-are guaranteed at 100°C, and safe operating area (SOA) limits are validated at this temperature for inductive loads. This ensures reliable operation in enclosed, high-ambient environments typical of industrial power supplies.

Is the MJE5850G pin-compatible with the MJE13007 series?

No, the MJE5850G is not pin-compatible with the MJE13007 series. While they are complementary in function (PNP vs. NPN), the MJE5850G uses TO-220 Style 1 pinout (Base–Collector–Emitter), whereas the MJE13007 uses Base–Emitter–Collector. Physical substitution requires PCB layout revision; however, they are functionally matched for push-pull or half-bridge designs when properly routed.

Does the MJE5850G require a heatsink in standard operation?

Yes, the MJE5850G requires a heatsink for continuous operation above ~2 A at ambient temperatures exceeding 40°C. With R_θJC = 1.25°C/W and P_D = 80 W at T_C = 25°C, thermal design must account for case-to-ambient resistance. A typical 2.5°C/W heatsink with thermal interface material keeps T_J within limit at 4 A continuous, making heatsink mounting essential for rated performance.

What does "G" suffix mean in MJE5850G?

The "G" suffix in MJE5850G indicates a Pb-free, RoHS-compliant packaging variant per onsemi's standard nomenclature. It denotes that the device meets EU Directive 2011/65/EU requirements, with lead-free terminations and compatible with standard SnAgCu reflow profiles. The "G" version shares identical electrical and thermal specifications with the legacy MJE5850 part.

Can the MJE5850G be used in avalanche mode?

No, the MJE5850G is not rated for avalanche operation. Its RBSOA curves (Figure 13) are verified under clamped conditions only-meaning external circuitry (e.g., clamping diodes or RC snubbers) must limit V_CE during turn-off to stay within the defined reverse-bias safe operating area. Operation beyond RBSOA boundaries risks single-pulse failure and is not supported by onsemi's characterization or warranty.

MJE5850G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: SWITCHMODE™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 8 A

Voltage - Collector Emitter Breakdown (Max):: 300 V

Vce Saturation (Max) @ Ib, Ic:: 5V @ 3A, 8A

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: 5 @ 5A, 5V

Power - Max:: 80 W

Frequency - Transition:: -

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

MJE5850G FAQ

1.How can I place an order for MJE5850G through Aetrix?

Please submit a Request for Quotation (RFQ) for MJE5850G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJE5850G reliable?

The price and inventory of MJE5850G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJE5850G is usually 5 days.

3.What payment methods are accepted for MJE5850G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJE5850G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJE5850G?

MJE5850G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJE5850G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJE5850G?

For technical support, including MJE5850G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJE5850G requirements.

6.How does Aetrix verify that MJE5850G is sourced from the original manufacturer or authorized distributors?

All MJE5850G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJE5850G meets industry standards.

7.What is the process for return or replacement of MJE5850G?

All MJE5850G units undergo pre-shipment inspection (PSI). If there is an issue with MJE5850G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJE5850G part is unused and in its original packaging.

Return procedure for MJE5850G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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