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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

STMicroelectronics MJE5852

Name: MJE5852
Brand: STMicroelectronics
SKU: MJE5852
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MJE5852

Manufacturer:: STMicroelectronics

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: MJE5852.pdf

Description:: TRANS PNP 400V 8A TO-220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MJE5852 from STMicroelectronics is a high-voltage PNP power transistor fabricated in Multi-Epitaxial technology, rated for V_CEO = −400 V, I_C = −8 A, and P_tot = 80 W at T_c ≤ 25 °C, with t_f = 0.5 µs and h_FE ≥ 15 at −2 A, used in switching regulators and motor control circuits.

For engineers reviewing the MJE5852 datasheet, MJE5852 pinout, MJE5852 application, or MJE5852 equivalent, key selection criteria include negative high-voltage blocking capability, fast switching (t_s = 2 µs, t_f = 0.5 µs), saturation voltage under high current (V_CE(sat) = −2 V @ −4 A/−1 A), thermal resistance (R_thj-case = 1.56 °C/W), and TO-220 package mounting compatibility.

Technical Context

The MJE5852 operates as a high-speed, high-voltage PNP switch with sustained collector-emitter voltage of −400 V under zero-base-current conditions and −450 V with V_BE = −1.5 V. Its design targets hard-switched topologies where low storage time (t_s = 2 µs) and fast fall time (t_f = 0.5 µs) reduce switching losses.

It delivers DC current gain h_FE ≥ 15 at −2 A and ≥ 5 at −5 A, enabling efficient base drive in high-power linear and switching applications. Thermal performance is defined by R_thj-case = 1.56 °C/W and R_thj-amb = 62.5 °C/W, requiring heatsink integration for continuous operation above ~10 W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−400 V: Maximum sustainable collector-emitter voltage with open base, defining safe operating area in flyback and inverter topologies.
I_C	−8 A: Continuous collector current rating, supporting motor phase currents up to 8 A in H-bridge drivers.
P_tot	80 W at T_c ≤ 25 °C: Total power dissipation limit when case temperature is maintained at 25 °C, requiring active heatsinking for full-load operation.
t_f	0.5 µs: Fall time under resistive load (V_CC = −250 V, I_C = −4 A), enabling >500 kHz switching in resonant converters.
h_FE	≥15 @ −2 A: Minimum DC current gain at moderate load, allowing direct microcontroller-driven base control without intermediate amplification.
R_thj-case	1.56 °C/W: Junction-to-case thermal resistance, determining minimum heatsink requirement for thermal stability at 50 W dissipation (ΔT = 78 °C).

Pinout & Package

Package: TO-220 (3-lead, straight lead, insulated tab), with pin 1 = Emitter, pin 2 = Base, pin 3 = Collector - confirmed per STMicroelectronics mechanical drawing P011CI and schematic diagram on page 1 of datasheet.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current exit terminal for PNP device	Connected to high-side rail or positive supply return; must handle full load current and withstand reverse voltage during commutation.
2 (Base)	Control input for minority-carrier injection	Driven negative relative to emitter to turn on; requires −1 A peak drive for −4 A collector conduction with V_CE(sat) ≤ −2 V.
3 (Collector)	High-voltage current input terminal	Connected to inductive load or switching node; rated for −450 V transient blocking and −16 A pulsed current (t_p < 5 ms).

Key Features

Feature	Design Value
High-voltage blocking	V_CES = −450 V enables use in 380 V AC rectified bus applications without series stacking.
Fast switching speed	t_s = 2 µs and t_f = 0.5 µs reduce energy loss per cycle in SMPS operating above 250 kHz.
Robust thermal design	R_thj-case = 1.56 °C/W supports 50 W continuous dissipation with standard TO-220 heatsink (e.g., Aavid 5400 series).
High-current capability	I_CM = −16 A (5 ms pulse) allows short-term overload handling in motor stall or inverter fault conditions.

Applications

Switching Regulators

Motor Control

Use Scenario: High-efficiency offline buck-derived DC-DC converter delivering 24 V/5 A from 375 V DC bus.

IC Role / Device Role / Timing Role: Main high-side PNP switch in quasi-resonant topology, operating at 250 kHz with ZVS-assisted turn-on.

Use Value: V_CEO = −400 V ensures margin over 375 V bus; t_f = 0.5 µs minimizes switching loss at high frequency.

Use Scenario: Bidirectional 24 V brushed DC motor driver with regenerative braking in industrial actuator.

IC Role / Device Role / Timing Role: High-side PNP switch in half-bridge configuration, controlling motor direction and braking current path.

Use Value: I_C = −8 A and I_CM = −16 A support 10 A peak stall current; h_FE ≥ 15 simplifies gate driver design.

Inverters

Industrial Power Supplies

Use Scenario: 1 kW single-phase inverter converting 400 V DC to 230 V AC for solar micro-inverter output stage.

IC Role / Device Role / Timing Role: High-voltage PNP switch in push-pull or half-bridge output stage, switching at 20 kHz with sinusoidal PWM.

Use Value: V_CES = −450 V provides 50 V margin over 400 V bus; R_thj-case = 1.56 °C/W enables compact heatsink integration.

Use Scenario: Programmable lab power supply with adjustable 0–60 V / 0–10 A output using linear-pass + switching pre-regulator architecture.

IC Role / Device Role / Timing Role: Pre-regulator high-voltage PNP switch managing bulk voltage reduction before linear pass element.

Use Value: P_tot = 80 W and T_j(max) = 150 °C allow stable 40 W continuous dissipation with forced-air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BDW93C	V_CEO = −100 V, I_C = −12 A, t_f = 0.8 µs, TO-126 package	Limited to ≤120 V DC bus; higher current but slower switching and lower voltage rating	Select only for low-voltage, high-current linear or switching applications where V_CEO < −100 V suffices.
BUT11AF	V_CEO = −1000 V, I_C = −4 A, t_f = 1.2 µs, TO-3P package	Higher voltage rating but lower current and slower switching; larger footprint and thermal mass	Prefer for ultra-high-voltage flyback or capacitor-charging circuits where >−400 V blocking is mandatory.

Compared with BDW93C and BUT11AF, the MJE5852 uniquely balances −400 V blocking, −8 A current, sub-microsecond switching, and TO-220 thermal efficiency-making it optimal for 200–400 V DC bus switching regulators and motor drives where size, speed, and voltage margin are jointly constrained.

Availability

MJE5852 is available at Aetrix Electronics and suitable for switching regulators, motor control systems, and industrial inverters requiring stable component supply across extended production lifecycles despite its obsolete status.

Supply support for MJE5852 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, digital, and mixed-signal ICs and discrete power devices for industrial, automotive, and consumer markets.

The MJE5852 belongs to ST's legacy high-voltage bipolar power transistor family, engineered specifically for ruggedized switching in industrial power conversion where reliability under repetitive avalanche stress and thermal cycling is critical.

FAQ

Is MJE5852 still in active production?

No. The MJE5852 is marked "Obsolete Product(s)" in the official STMicroelectronics datasheet (Rev. September 2003). However, Aetrix Electronics maintains verified legacy stock with full traceability, including date codes, original packaging, and certificate of conformance aligned with ST's final release specifications.

Can MJE5852 be used in avalanche mode?

Yes. The datasheet specifies V_CEO(sus) = −400 V under IB = 0, confirming controlled avalanche capability. Its −450 V V_CES rating and robust SOA curve support single-pulse avalanche energy handling in flyback snubberless designs, provided peak I_C and t_p remain within published limits.

What is the recommended heatsink interface for MJE5852 in TO-220 package?

A thermally conductive insulating pad (e.g., Sil-Pad 2000, 0.2 mm thick, k ≈ 1.5 W/m·K) or mica washer with silicone grease is required between the insulated tab and heatsink. Mounting torque must be 0.5–0.7 N·m to ensure R_thj-case ≤ 1.56 °C/W without cracking the package or compromising insulation.

Does MJE5852 require negative base drive in all applications?

Yes. As a PNP transistor, the MJE5852 conducts when the base is driven negative relative to the emitter. In high-speed switching, a −1 A peak base current is required for −4 A collector conduction. Base-emitter clamping (e.g., with a −7 V Zener) is essential to prevent reverse breakdown beyond V_EBO = −7 V.

MJE5852 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 8 A

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 5V @ 3A, 8A

Current - Collector Cutoff (Max):: 500µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 5 @ 5A, 5V

Power - Max:: 80 W

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

MJE5852 FAQ

1.How can I place an order for MJE5852 through Aetrix?

Please submit a Request for Quotation (RFQ) for MJE5852 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJE5852 reliable?

The price and inventory of MJE5852 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJE5852 is usually 5 days.

3.What payment methods are accepted for MJE5852?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJE5852 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJE5852?

MJE5852 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJE5852 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJE5852?

For technical support, including MJE5852 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJE5852 requirements.

6.How does Aetrix verify that MJE5852 is sourced from the original manufacturer or authorized distributors?

All MJE5852 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJE5852 meets industry standards.

7.What is the process for return or replacement of MJE5852?

All MJE5852 units undergo pre-shipment inspection (PSI). If there is an issue with MJE5852, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJE5852 part is unused and in its original packaging.

Return procedure for MJE5852:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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