onsemi MJE5852

Overview

MJE5852 from onsemi is a PNP silicon power transistor designed for high-voltage, high-speed switching in inductive circuits where fast fall time is critical-specifically rated for 400 V_CEO(sus), 8 A continuous collector current, 80 W total power dissipation at T_C = 25°C, and TO-220 package. It is optimized for line-operated switch-mode applications including deflection circuits and motor controls.

For engineers reviewing the MJE5852 datasheet, pinout, applications, or equivalent options, key selection criteria include its 400 V sustained collector-emitter voltage rating, 0.11 µs typical fall time under resistive load, guaranteed inductive switching performance at 100°C, RBSOA compliance with clamped inductive turn-off, and complementary pairing with the MJE13007 series.

Technical Context

The MJE5852 operates as a high-voltage PNP bipolar junction transistor with base-controlled current amplification (h_FE ≥ 5 at I_C = 5.0 A, V_CE = 5 V). Its safe operating area is defined for both forward-biased (SOA) and reverse-biased (RBSOA) conditions, with second-breakdown limits validated up to 5 ms pulse width and thermal resistance R_JC = 1.25°C/W.

Switching behavior is characterized under both resistive and clamped inductive loads: t_f = 0.11 µs (resistive), t_fi = 0.1 µs (inductive current fall), and t_c = 0.4 µs (crossover time at 100°C), enabling efficient operation in high-frequency converter topologies requiring minimal switching loss.

Key Specifications

Pinout & Package

Package: TO-220 (Case 221A-09, Style 1), 3-terminal variant with collector internally connected to tab (pins 2 and 4 both collector).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage power switching applications.

Compared with MJE5851, the MJE5852 provides 50 V higher sustained blocking voltage for enhanced flyback margin in CRT deflection and offline SMPS. Compared with BDW53C, it delivers 3× faster fall time and full RBSOA validation at 100°C-critical for reliable high-voltage inductive turn-off without snubbers.

Availability

MJE5852 is available at Aetrix Electronics and suitable for horizontal deflection circuits, switch-mode power supplies, and motor control drivers requiring stable component supply across industrial and broadcast equipment lifecycles.

Supply support for MJE5852 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MJE5852 belongs to onsemi's Switch-mode Series of PNP silicon power transistors, engineered specifically for high-voltage, high-speed inductive switching where fall time and RBSOA performance at elevated temperature are critical design constraints.

FAQ

What is the maximum collector-emitter sustaining voltage for the MJE5852?

The MJE5852 has a maximum collector-emitter sustaining voltage V_CEO(sus) of 400 Vdc under open-base conditions, as specified in the onsemi datasheet. This rating defines its ability to block inductive flyback voltage without breakdown and is validated per JEDEC test conditions with I_C = 10 mA and I_B = 0. The MJE5852 also supports V_CEV = 450 Vdc under reverse-biased base conditions for clamped inductive turn-off scenarios.

Is the MJE5852 suitable for use in switch-mode power supplies operating above 100°C junction temperature?

No-the MJE5852 is specified for operation up to +150°C junction temperature, but its key performance parameters-including saturation voltage, leakage current, switching times, and RBSOA-are guaranteed only up to +100°C per the datasheet. While the device can survive brief excursions beyond 100°C, design margins must be maintained using the 100°C-tested values for reliability-critical switch-mode power supply applications.

Does the MJE5852 have a complementary NPN counterpart in the same package?

Yes-the MJE5852 is explicitly designed as the PNP complement to the MJE13007 series of NPN transistors, which share the TO-220 package and compatible voltage/current ratings. This pairing facilitates balanced push-pull and half-bridge driver stages in power conversion and motor control circuits without layout redesign.

What is the thermal resistance from junction to case for the MJE5852?

The MJE5852 has a maximum thermal resistance R_JC of 1.25°C/W, measured from junction to the metal tab (collector). This value is critical for heatsink sizing: for example, at 80 W dissipation and 25°C case temperature, the junction will reach approximately 125°C-well within the 150°C absolute maximum limit. Derating begins above 25°C at 0.640 W/°C.

How does the MJE5852's inductive switching performance differ from its resistive switching specs?

The MJE5852's inductive switching performance-particularly t_fi = 0.1 µs (current fall time) and t_c = 0.4 µs (crossover time)-is guaranteed at 100°C and reflects real-world behavior under clamped inductive loads like flyback transformers. In contrast, resistive specs (e.g., t_f = 0.11 µs) are measured at 25°C and do not capture voltage-current phase shift or RBSOA-limited turn-off dynamics essential for switch-mode design.