onsemi MJE703G
- Part No.:
- MJE703G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-225AA, TO-126-3
- Datasheet:
-
MJE703G.pdf
- Description:
- TRANS PNP DARL 80V 4A TO-126
- Quantity:
- Payment:

- Shipping:

Inventory:7,705
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Product details
Overview
MJE703G from onsemi is a PNP silicon Darlington power transistor in TO-225 package, rated for 80 VCEO, 4.0 A collector current, and 40 W power dissipation at TC = 25°C. It delivers high DC current gain (hFE = 750 min at IC = 2.0 A), low VCE(sat) (2.8 V max), and built-in base-emitter resistors to suppress leakage multiplication - used in industrial relay drivers and low-speed switching power stages.
For engineers reviewing the MJE703G datasheet, pinout, applications, or equivalent options, this page provides verified electrical parameters, thermal derating behavior, safe operating area limits, and validated alternative transistors for amplifier and switching designs requiring robust PNP Darlington performance at ≤80 V and ≤4 A.
Technical Context
The MJE703G implements a monolithic PNP Darlington pair with integrated base-emitter shunt resistors to minimize leakage-induced secondary breakdown risk. Its 80 VCEO rating and 4.0 A continuous collector current support medium-voltage, medium-current linear and switching applications where gain stability across temperature is critical.
Thermal design relies on its RJC = 3.12 °C/W junction-to-case resistance and defined SOA curves (Figures 5–6), with second-breakdown-limited operation up to 150°C junction temperature under pulsed conditions - validated for duty cycles ≤10% per Figure 4 transient thermal response data.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 Vdc - maximum collector-emitter voltage before breakdown at IC = 50 mA, defining safe blocking capability in PNP switch configurations. |
| IC | 4.0 Adc - continuous collector current limit at TC = 25°C, sets maximum load drive capacity in relay or lamp driver circuits. |
| PD | 40 W - total power dissipation at case temperature 25°C; derates linearly by 0.32 W/°C above 25°C per Figure 1. |
| hFE | 750 min @ IC = 2.0 A, VCE = 3.0 V - ensures low base drive current requirement (≤2.7 mA) for full-load switching. |
| VCE(sat) | 2.8 V max @ IC = 2.0 A, IB = 40 mA - determines conduction loss and heat generation in saturated switching mode. |
| RJC | 3.12 °C/W - defines minimum thermal resistance path from junction to heatsink mounting surface, critical for heatsink sizing. |
Pinout & Package
Package: TO-225 (Case 77-09, Style 1), plastic through-hole package with metal tab (pins 2 and 4 both connected to collector, pin 1 = emitter, pin 3 = base).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Emitter | Main current exit terminal for PNP device; connects to load return or ground reference in common-emitter configurations. |
| Pins 2 & 4 | Collector | Electrically tied collector terminals; mounted to heatsink via metal tab for thermal management and electrical connection. |
| Pin 3 | Base | Control input for Darlington pair; requires current-limited drive due to high hFE and internal resistor network. |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic Darlington construction | Integrates driver and output transistors on single die, eliminating interconnect parasitics and ensuring matched thermal tracking. |
| Built-in base-emitter shunt resistors | Suppresses leakage current multiplication at high temperature, improving reliability in sustained conduction or standby modes. |
| 80 VCEO rating | Enables use in 48 V industrial bus systems and 24 V control circuits with margin against inductive kickback and supply transients. |
| Pb-free and RoHS-compliant packaging | Meets global environmental regulations without compromising thermal or mechanical performance of TO-225 leadframe. |
Applications
| Industrial Relay Drivers | DC Motor Speed Controllers |
|---|---|
Use Scenario: Driving 24 V/48 V electromagnetic relays in PLC output modules with 100 ms switching cycles and ambient temperatures up to 70°C. IC Role / Device Role / Timing Role: PNP Darlington switch providing high-current sinking capability with minimal base drive overhead. Use Value: High hFE reduces microcontroller GPIO loading; 80 VCEO withstands relay coil flyback spikes without snubber diodes. | Use Scenario: Low-frequency PWM-based speed control of brushed DC motors (≤1 kW) in HVAC actuators and conveyor drives. IC Role / Device Role / Timing Role: Saturated PNP switch in high-side configuration, handling bidirectional current during braking phases. Use Value: 4.0 A IC and 40 W PD support intermittent 3 A motor stall currents; SOA curves validate safe operation at 10% duty cycle. |
| Linear Power Regulators | High-Voltage LED Drivers |
Use Scenario: Pass transistor in adjustable 0–36 V, 2 A linear regulator for test equipment requiring low noise and fast transient response. IC Role / Device Role / Timing Role: Series pass element operating in active region, dissipating up to 30 W continuously with heatsink. Use Value: RJC = 3.12 °C/W enables compact heatsink design; VBE(on) = 2.5 V ensures stable biasing over temperature. | Use Scenario: Constant-current sink for 36 V string LEDs in signage and architectural lighting with dimming via analog voltage control. IC Role / Device Role / Timing Role: High-side current regulator using emitter-follower configuration with precision sense resistor feedback. Use Value: 80 VCEO accommodates 36 V LED strings plus 20 V headroom; low VCE(sat) minimizes power loss in current-sense path. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP Darlington power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJE702G | Same TO-225 package, but rated for 60 VCEO and 4.0 A; lower voltage headroom and reduced SOA at high VCE. | Suitable only for ≤48 V systems; not recommended where 80 V transient immunity is required. | Select MJE702G only when cost sensitivity outweighs need for 80 V rating and system-level surge margin. |
| TIP42CG | TO-220 package, 100 VCEO, 6 A IC, but no integrated base-emitter resistors and higher VCE(sat) (1.5 V typ vs. 2.8 V max for MJE703G). | Requires external leakage suppression; better for high-current, high-voltage switching where layout allows TO-220 heatsinking. | Choose TIP42CG when higher voltage margin and current headroom are prioritized over leakage-controlled reliability in thermally constrained spaces. |
Compared with MJE702G and TIP42CG, the MJE703G uniquely balances 80 V blocking, built-in leakage suppression, and TO-225 form factor - making it optimal for space-constrained industrial controls needing robust PNP Darlington performance without external components.
Availability
MJE703G is available at Aetrix Electronics and suitable for industrial relay drivers, DC motor speed controllers, and linear power regulators requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for MJE703G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The MJE703G belongs to onsemi's legacy silicon power transistor family designed specifically for general-purpose amplifier and low-speed switching applications - emphasizing ruggedness, thermal stability, and ease of integration in industrial control hardware.
FAQ
What is the maximum safe collector-emitter voltage for MJE703G?
The MJE703G has a guaranteed minimum VCEO rating of 80 Vdc at IC = 50 mA and TC = 25°C. This value is confirmed in the "Maximum Ratings" table and validated by SOA curves in Figure 5. Exceeding 80 V risks avalanche breakdown and permanent damage, especially under elevated temperature or high-dV/dt conditions.
Does MJE703G require an external base resistor for reliable switching?
No - the MJE703G integrates base-emitter shunt resistors to limit leakage multiplication, eliminating the need for external base pull-down resistors in most applications. However, a series base current-limiting resistor remains necessary to set IB for desired IC, as specified in the "ON CHARACTERISTICS" table (e.g., 40 mA base drive for 2.0 A collector current).
Can MJE703G be used in parallel with other transistors for higher current handling?
Parallel operation of MJE703G devices is not recommended due to inherent parameter spread in hFE and VBE(on), which causes current imbalance and thermal runaway. The datasheet does not specify matching tolerances or recommend forced current-sharing techniques; discrete current-balancing resistors would degrade efficiency and add complexity.
What is the thermal resistance from junction to ambient for MJE703G?
The MJE703G has a maximum RJA of 83.3 °C/W under standard JEDEC test conditions (single-layer PCB, 1 in² copper pad). This value assumes no heatsink - actual RJA improves significantly with heatsinking via the metal tab (RJC = 3.12 °C/W), making heatsink selection essential for >10 W continuous dissipation.
Is MJE703G suitable for high-frequency switching applications?
No - the MJE703G is characterized for low-speed switching only, with typical turn-off time (toff) exceeding 1 μs and no small-signal fT specification. Its Darlington architecture introduces storage delay, making it unsuitable for PWM above ~10 kHz; use dedicated RF or fast-switching transistors for such applications.
MJE703G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-225AA, TO-126-3
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- PNP - Darlington
- Current - Collector (Ic) (Max):
- 4 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 2.8V @ 40mA, 2A
- Current - Collector Cutoff (Max):
- 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 750 @ 2A, 3V
- Power - Max:
- 40 W
- Frequency - Transition:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-126
MJE703G FAQ
1.How can I place an order for MJE703G through Aetrix?
Please submit a Request for Quotation (RFQ) for MJE703G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MJE703G reliable?
The price and inventory of MJE703G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJE703G is usually 5 days.
3.What payment methods are accepted for MJE703G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJE703G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MJE703G?
MJE703G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MJE703G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MJE703G?
For technical support, including MJE703G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJE703G requirements.
6.How does Aetrix verify that MJE703G is sourced from the original manufacturer or authorized distributors?
All MJE703G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJE703G meets industry standards.
7.What is the process for return or replacement of MJE703G?
All MJE703G units undergo pre-shipment inspection (PSI). If there is an issue with MJE703G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MJE703G part is unused and in its original packaging.
Return procedure for MJE703G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MJE703G Tags

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