onsemi MJF15031

Overview

MJF15031 from onsemi is a PNP complementary silicon power transistor in TO-220 Fullpack package, rated for 150 V_CEO, 8 A continuous collector current, and 36 W power dissipation at T_C = 25°C. It delivers electrically isolated mounting (4500 V_RMS isolation), high h_FE linearity (typ. 2–3), and 30 MHz f_T, enabling use in high-reliability linear amplifiers and switching stages where heatsink electrical isolation is mandatory.

For engineers reviewing the MJF15031 datasheet, pinout, applications, or equivalent options, key selection criteria include verified 4500 V_RMS isolation rating, PNP polarity with base-emitter voltage ≤1 V at I_C = 1 A, thermal resistance R_JC = 3.5 °C/W, and safe operating area compliance up to 150°C junction temperature under pulsed and DC conditions.

Technical Context

The MJF15031 operates as a high-voltage, medium-power PNP bipolar junction transistor optimized for isolated-package mounting-eliminating need for insulating washers. Its design integrates UL-recognized 4500 V_RMS isolation between leads and heatsink, validated per Figure 11 test setup with shorted leads.

It features a DC current gain (h_FE) of ≥40 at I_C = 0.1 A and ≥20 at I_C = 4 A, with V_CE(sat) ≤ 0.5 V at I_C/I_B = 10, supporting efficient switching in complementary amplifier pairs alongside its NPN counterpart MJF15030.

Key Specifications

Pinout & Package

Package: TO-220 Fullpack (Case 221D, Style 2), Pb-free, electrically isolated plastic housing with metal tab serving as collector terminal and mechanical mounting surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJE15031 and BDW53C, the MJF15031 uniquely provides certified 4500 V_RMS isolation in a standard TO-220 footprint-enabling direct heatsink attachment while meeting UL clearance requirements, unlike either alternative which require additional insulation and introduce thermal penalty.

Availability

MJF15031 is available at Aetrix Electronics and suitable for audio power amplifiers, industrial motor drivers, switch-mode power supplies, and test & measurement equipment requiring stable component supply and certified electrical isolation.

Supply support for MJF15031 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The MJF15031 belongs to onsemi's Complementary Power Transistors family, engineered specifically for high-reliability amplifier and switching circuits where electrically isolated mounting eliminates insulator hardware and improves thermal performance.

FAQ

What is the maximum isolation voltage rating for MJF15031?

The MJF15031 is UL Recognized (File #E69369) for 4500 V_RMS isolation between all leads and the heatsink, measured with leads shorted together per Figure 11 of the datasheet. This rating applies at t = 0.3 sec, relative humidity ≤30%, and T_A = 25°C. The device achieves this via fully isolated TO-220 Fullpack construction, eliminating need for external insulating hardware.

Does MJF15031 have the same pinout as standard TO-220 transistors?

Yes, the MJF15031 uses TO-220 Fullpack Style 2 pinout: Pin 1 = Base, Pin 2 & 4 = Collector (metal tab), Pin 3 = Emitter. This matches industry-standard TO-220 layout, ensuring compatibility with existing PCB footprints designed for MJE15031 or BDW53C-though thermal and isolation performance differ significantly due to the insulated package construction.

What is the safe operating area (SOA) limitation for MJF15031 at 100°C case temperature?

At T_C = 100°C, the MJF15031's SOA is constrained by thermal limits rather than secondary breakdown. From Figure 2, the DC limit drops to approximately 3.5 A at V_CE = 50 V and 1.2 A at V_CE = 100 V. Derating follows R_JC = 3.5 °C/W and maximum T_J = 150°C, requiring heatsink thermal resistance ≤14.3 °C/W for full 36 W dissipation at that case temperature.

Can MJF15031 be used in parallel with other transistors for higher current?

Parallel operation of MJF15031 devices is feasible but requires individual emitter resistors (typically 0.1–0.22 Ω) to ensure current sharing, as h_FE variation across units can cause imbalance. The device's positive temperature coefficient of V_BE aids thermal stability, but layout symmetry and matched base drive are essential. Refer to onsemi Application Note AN1040 for validated parallel mounting techniques.

Is MJF15031 suitable for switching applications above 100 kHz?

The MJF15031 has f_T = 30 MHz and typical turn-off time t_s + t_f ≈ 0.5 μs at I_C/I_B = 10, making it viable for switching up to ~200 kHz in hard-switched topologies. However, its relatively high V_CE(sat) (≤0.5 V) and lack of optimized charge storage characteristics mean it is less efficient than modern MOSFETs or RF BJTs above 500 kHz-use is recommended primarily for audio, SMPS auxiliary stages, or <200 kHz industrial switching.