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onsemi MJH11017

Part No.:
MJH11017
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-218-3
Datasheet:
AetrixMJH11017.pdf
Description:
TRANS PNP DARL 150V 15A SOT-93
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,194

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Product details

Overview

MJH11017 from onsemi is a PNP complementary Darlington silicon power transistor designed for low-frequency switching and motor control applications. It delivers 15 A continuous collector current, sustains 150 Vdc collector-emitter voltage (VCEO(sus)), and achieves minimum DC current gain (hFE) of 400 at 10 Adc - enabling high-current amplification with minimal base drive in industrial power stages.

For engineers reviewing the MJH11017 datasheet, pinout, applications, or equivalent options, key selection criteria include its 150 V/15 A rating, TO-218 (SOT-93) or TO-247 package options, low VCE(sat) of 1.2 V @ 5 A, thermal resistance of 0.83 °C/W, and suitability for linear amplifier and inductive load switching where robust second-breakdown SOA is required.

Technical Context

The MJH11017 is a monolithic PNP Darlington pair with integrated driver and output transistors, optimized for high DC current gain and rugged safe operating area (SOA) under both forward-bias (FBSOA) and reverse-bias (RBSOA) conditions. Its design supports stable operation up to 150 °C junction temperature and features Pb-free construction per RoHS.

It exhibits typical VCE(sat) of 1.2 V at IC = 5.0 A and 1.8 V at IC = 10 A, with VBE(on) of 2.8 V and VBE(sat) of 3.8 V under rated conditions. Small-signal current gain (hfe) is 75 at 10 A/3 V/1 kHz, while fT is 3.0 MHz - confirming suitability for audio-frequency and <100 kHz switching rather than RF or high-speed digital use.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO(sus) 150 Vdc minimum - defines maximum sustainable collector-emitter voltage during switching with zero base current, critical for inductive load snubbing design
IC (Continuous) 15 Adc - usable continuous collector current at TC = 25 °C; derates linearly above 25 °C per 1.2 W/°C
hFE (Min) 400 @ IC = 10 Adc, VCE = 5 Vdc - enables low base drive current (e.g., ~25 mA) for full 10 A output, reducing driver stage complexity
VCE(sat) (Typ) 1.2 V @ IC = 5.0 A, IB = 50 mA - limits conduction loss to ≤6 W at 5 A, supporting thermally constrained PCB layouts
RJC 0.83 °C/W - allows 150 W dissipation with only 124.5 °C rise from case to junction at max PD, easing heatsink selection
Cob 400–600 pF @ VCB = 10 Vdc, f = 0.1 MHz - impacts turn-off speed and gate/base drive impedance matching in switching circuits
td / tr / ts / tf 75 ns / 0.5 μs / 2.7 μs / 2.5 μs (PNP) - defines switching timing envelope for <50 kHz PWM motor drives and relay replacements

Pinout & Package

Package: TO-218 (SOT-93, Case 340D) or TO-247 (Case 340L), both 4-pin configurations with dual collector terminals for enhanced current handling and thermal path. Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter, Pin 4 = Collector (redundant collector connection).

Pin/Terminal Circuit Role Design Meaning
Pin 1 Base Control input requiring ~25 mA for full 10 A conduction; high hFE reduces driver burden vs. single bipolar devices
Pin 2 & Pin 4 Collector (dual) Parallel collector terminals lower effective lead inductance and spreading resistance; must be connected together externally
Pin 3 Emitter Power return path; tied to system ground or negative rail in PNP high-side switch configurations

Key Features

Feature Design Value
High hFE ≥ 400 @ 10 A Reduces base drive requirements by >10× versus standard power transistors, enabling direct microcontroller GPIO or low-power op-amp drive
150 V VCEO(sus) rating Supports 120 VAC line-connected loads and 100 VDC bus systems with margin for inductive kickback without external clamping
FBSOA/RBSOA curves Validated safe operating area up to 150 °C case temperature ensures reliability in motor stall, short-circuit, and regenerative braking events
Monolithic Darlington structure Eliminates inter-device parameter mismatch and thermal tracking issues found in discrete Darlington pairs, improving consistency
Pb-free TO-218/TO-247 packages Enables RoHS-compliant industrial assembly; TO-247 offers improved thermal performance and mechanical robustness over TO-218

Applications

DC Motor Control Linear Audio Amplifier Output Stage

Use Scenario: Bidirectional brushed DC motor driver in industrial actuators with 24–90 VDC supply and 5–12 A peak load.

IC Role / Device Role / Timing Role: PNP high-side switch in H-bridge complementing NPN MJH11018/MJH11020, handling reverse current during PWM decay.

Use Value: 150 V VCEO(sus) withstands back-EMF spikes up to 100 V; low VCE(sat) minimizes heat generation during 100% duty cycle stall conditions.

Use Scenario: Class-AB output stage in 50 W audio power amplifier for public address systems.

IC Role / Device Role / Timing Role: Complementary PNP output device paired with MJH11018, delivering symmetrical positive/negative swing into 4–8 Ω loads.

Use Value: High hFE ensures stable bias current across temperature; FBSOA curve guarantees no second-breakdown distortion at full power into reactive speaker loads.

Industrial Relay Replacement Low-Frequency Inverter Half-Bridge

Use Scenario: Solid-state replacement for 10 A electromechanical relays in PLC output modules controlling solenoids and valves.

IC Role / Device Role / Timing Role: Low-frequency switching element toggling at ≤10 Hz with 15 A resistive load and 120 VAC-derived DC bus.

Use Value: 15 A continuous rating and 30 A peak capability exceed relay specs; RBSOA validated for inductive turn-off without snubber diodes.

Use Scenario: Upper-leg switch in 20 kHz PWM inverter driving 3-phase induction motors in HVAC blowers (≤1 kW).

IC Role / Device Role / Timing Role: PNP Darlington in half-bridge topology, commutating 10 A inductive current with controlled fall time (2.5 μs).

Use Value: Cob of 400–600 pF sets practical gate/base drive impedance; thermal resistance of 0.83 °C/W enables compact heatsinking at 20 kHz switching loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington power transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
MJH11019 200 V VCEO(sus) min, same package and pinout Higher voltage margin for 160 VDC bus or 230 VAC rectified systems Select when operating above 150 V or requiring extended avalanche margin
BDW53C 100 V VCEO(sus), TO-220 package, hFE = 750 min @ 3 A Lower voltage rating but higher hFE at moderate current; smaller footprint Prefer for space-constrained 48 VDC designs where 100 V margin suffices and thermal budget allows TO-220

Compared with MJH11017, MJH11019 offers +50 V headroom for higher-voltage DC buses without changing layout, while BDW53C trades voltage capability for higher gain and smaller package - making it suitable for lower-voltage, space-sensitive applications where 100 V suffices.

Availability

MJH11017 is available at Aetrix Electronics and suitable for industrial motor control, audio amplifier output stages, solid-state relay modules, and low-frequency inverter half-bridges requiring stable component supply and long-term obsolescence management.

Supply support for MJH11017 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The MJH11017 belongs to onsemi's complementary Darlington power transistor family, engineered specifically for ruggedized linear amplification and low-frequency switching in harsh industrial environments where SOA integrity and thermal stability are critical.

FAQ

What is the maximum continuous collector current rating for the MJH11017 at 25°C case temperature?

The MJH11017 has a maximum continuous collector current (IC) rating of 15 Adc at TC = 25°C. This rating decreases linearly with rising case temperature at 1.2 W/°C derating - meaning at 100°C case temperature, the usable continuous current drops to approximately 6 A based on its 150 W total dissipation limit and 0.83 °C/W thermal resistance. Always verify actual junction temperature using RJC and ambient conditions in final layout.

Does the MJH11017 support direct microcontroller GPIO drive without an external driver transistor?

The MJH11017 can be driven directly by many microcontroller GPIOs under light-load conditions, thanks to its minimum hFE of 400 at 10 Adc - requiring only ~25 mA base current for full conduction. However, for reliable 15 A switching or fast turn-on/turn-off, a dedicated driver (e.g., ULN2003 or discrete BJT stage) is recommended to ensure sufficient IB during transient peaks and maintain VBE(sat) stability. The MJH11017 datasheet specifies VBE(on) = 2.8 V and VBE(sat) = 3.8 V, confirming significant base-emitter voltage drop.

What is the difference between MJH11017 and MJH11019 in terms of voltage rating and compatibility?

The MJH11017 is rated for 150 Vdc minimum collector-emitter sustaining voltage (VCEO(sus)), while the MJH11019 is rated for 200 Vdc - a +50 V increase. Both share identical pinout (TO-218/TO-247), thermal characteristics (RJC = 0.83 °C/W), and electrical behavior (hFE ≥ 400, VCE(sat) ≈ 1.2–1.8 V). They are not pin-compatible drop-in replacements due to differing voltage safety margins; substituting MJH11017 for MJH11019 in a 200 V system risks premature failure under transient overvoltage.

Can the MJH11017 be used in parallel configurations to increase current handling?

Yes, the MJH11017 supports paralleling due to its monolithic Darlington construction and inherent current-sharing characteristics - unlike discrete transistor pairs, which suffer from thermal runaway. However, external emitter resistors (typically 0.1 Ω) are still recommended to balance dynamic current distribution during switching transients. Thermal coupling between devices must be minimized via separate heatsink zones or shared thermal mass with uniform mounting pressure to prevent localized hot spots.

Is the MJH11017 suitable for high-frequency switching applications such as >100 kHz SMPS?

No, the MJH11017 is not suitable for high-frequency switching above ~50 kHz. Its specified fT is 3.0 MHz, but switching times (ts = 2.7 μs, tf = 2.5 μs) and Cob = 400–600 pF result in excessive switching losses and thermal stress at high frequencies. The device is explicitly characterized for low-frequency switching and linear amplification - per its datasheet description as "general purpose amplifiers, low frequency switching and motor control applications." For SMPS, MOSFETs or RF-optimized BJTs are preferred.

MJH11017 Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-218-3
Packaging:
Tube
Product Status:
Obsolete
Transistor Type:
PNP - Darlington
Current - Collector (Ic) (Max):
15 A
Voltage - Collector Emitter Breakdown (Max):
150 V
Vce Saturation (Max) @ Ib, Ic:
4V @ 150mA, 15A
Current - Collector Cutoff (Max):
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
400 @ 10A, 5V
Power - Max:
150 W
Frequency - Transition:
3MHz
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
SOT-93

MJH11017 FAQ

1.How can I place an order for MJH11017 through Aetrix?

Please submit a Request for Quotation (RFQ) for MJH11017 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MJH11017 reliable?

The price and inventory of MJH11017 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJH11017 is usually 5 days.

3.What payment methods are accepted for MJH11017?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJH11017 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MJH11017?

MJH11017 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MJH11017 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MJH11017?

For technical support, including MJH11017 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJH11017 requirements.

6.How does Aetrix verify that MJH11017 is sourced from the original manufacturer or authorized distributors?

All MJH11017 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJH11017 meets industry standards.

7.What is the process for return or replacement of MJH11017?

All MJH11017 units undergo pre-shipment inspection (PSI). If there is an issue with MJH11017, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MJH11017 part is unused and in its original packaging.

Return procedure for MJH11017:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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