onsemi MJH16006A

Overview

MJH16006A from ON Semiconductor is an NPN silicon power transistor engineered for high-voltage, high-speed switching in inductive circuits-specifically line-operated SWITCHMODE applications. It delivers 8 A continuous collector current, 500 V V_CEO, and 150 W power dissipation at T_C = 25°C, with critical fast turn-off performance including 80 ns inductive fall time (T_J = 100°C). It is used in deflection circuits, motor controls, and relay drivers where controlled energy transfer and rugged SOA are essential.

For engineers reviewing the MJH16006A datasheet, pinout, applications, or equivalent options, key selection criteria include reverse-biased SOA validation under clamped inductive loads, verified 1000 V V_CEV sustaining capability, thermal resistance of 1.0 °C/W (junction-to-case), and confirmed 800 ns inductive storage time at 100°C-parameters directly tied to reliability in flyback and resonant converter topologies.

Technical Context

The MJH16006A operates as a high-voltage NPN switch optimized for inductive load switching where fall time and RBSOA govern system robustness. Its design emphasizes ultra-fast turn-off (80 ns typical fall time) and extended reverse-biased safe operating area using ultra-fast rectifiers like MUR8100, enabling reliable operation during voltage-current overlap in clamp-assisted topologies.

It features guaranteed second breakdown limits up to 10 µs pulse width, thermal derating from 125 W at 25°C to 50 W at 100°C, and specified performance across –55°C to +150°C junction temperature range-including leakage currents (ICEV ≤ 0.02 mA at 1000 V, 100°C) and saturation voltages (V_CE(sat) ≤ 0.6 V at 5 A/1 A, 100°C).

Key Specifications

Pinout & Package

Package: CASE 340D–02 - TO-3P variant with 4-pin configuration, metal tab (collector-connected), and isolated mounting flange. Dimensions per Issue B: 20.35 mm max height, 18.20 mm max width, 16.20 mm max length; designed for high-power thermal management and PCB-mounting with mechanical stability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN switching transistor applications.

Compared with MJ16006A and ST13007, the MJH16006A provides superior thermal performance (1.0 vs. 1.17 °C/W), verified 1000 V transient capability, and documented RBSOA for clamped inductive loads-making it the preferred choice for high-reliability, high-voltage SWITCHMODE applications demanding predictable safe operating margins.

Availability

MJH16006A is available at Aetrix Electronics and suitable for switching regulators, inverters, and deflection circuits requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial and broadcast equipment manufacturing.

Supply support for MJH16006A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensor, and discrete solutions for automotive, industrial, and communications markets.

The MJH16006A belongs to the 1 kV SWITCHMODE Series-a family of high-voltage bipolar transistors designed specifically for rugged, high-speed power switching in inductive circuits where fall time, RBSOA, and V_CEV define system reliability.

FAQ

What is the maximum collector-emitter voltage rating for MJH16006A?

The MJH16006A has a V_CEO rating of 500 Vdc and a V_CEV (sustaining voltage with base open) of 1000 Vdc. This dual rating allows the MJH16006A to withstand transient overvoltages up to 1000 V in clamped inductive circuits while maintaining safe DC blocking at 500 V-critical for line-operated SWITCHMODE applications where voltage spikes exceed nominal bus levels.

Does MJH16006A support reverse-biased safe operating area (RBSOA) operation?

Yes, the MJH16006A specifies RBSOA performance validated under clamped inductive conditions (see Figure 15). Its RBSOA is characterized for V_CE(pk) up to 400 V and I_C up to 5 A at T_J ≤ 100°C with V_BE(off) = 5 Vdc. This makes the MJH16006A suitable for high-reliability turn-off in flyback, forward, and resonant converters where base reverse bias is applied during switching transitions.

What is the thermal resistance of MJH16006A and how does it affect heatsink design?

The MJH16006A has a junction-to-case thermal resistance (R_θJC) of 1.0 °C/W. This value enables precise junction temperature calculation using T_J = T_C + (P_D × 1.0). For example, at 100 W dissipation and T_C = 80°C, T_J = 180°C-exceeding the 150°C maximum, confirming that heatsink design must keep T_C ≤ 50°C at full power to ensure reliability of the MJH16006A.

How does MJH16006A compare to MJ16006A in terms of package and thermal performance?

The MJH16006A uses CASE 340D–02 (isolated tab), while MJ16006A uses CASE 340D–01 (non-isolated tab). The MJH16006A achieves R_θJC = 1.0 °C/W versus 1.17 °C/W for MJ16006A-providing 17% better thermal conduction. Both share identical electrical specs, but the MJH16006A's improved thermal path and isolation make it preferable for high-density, safety-isolated, or high-reliability implementations of the same circuit.

What base drive requirements must be met to ensure safe turn-on of MJH16006A?

To ensure safe turn-on, the MJH16006A requires base current rise time faster than collector current rise time-especially above 75% of V_CEO(sus). A base drive compliance voltage exceeding 10 V is recommended, with IB1 ≥ 0.66 A for 5 A collector current. The MJH16006A datasheet specifies this condition in Switchmode III Design Considerations to avoid FBSOA violations during crossover, ensuring robust operation in high-voltage switching applications.