onsemi MJW21196
- Part No.:
- MJW21196
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-247-3
- Datasheet:
-
MJW21196.pdf
- Description:
- TRANS NPN 250V 16A TO-247-3
- Quantity:
- Payment:

- Shipping:

Inventory:5,360
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Product details
Overview
MJW21196 from onsemi is an NPN silicon power transistor designed for high-fidelity audio output stages, disk head positioners, and linear amplifier applications. It features a 250 VCEO, 16 A continuous collector current, 200 W total power dissipation at TC = 25°C, Perforated Emitter technology, and a minimum DC current gain (hFE) of 20 at IC = 8 A.
For engineers reviewing the MJW21196 datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area (SOA) at 2.25 A/80 V for 1 second, THD characterization down to 0.08% in matched-pair configurations, thermal resistance RJC = 0.7°C/W, and TO-247 package compatibility with high-power heatsinking requirements.
Technical Context
The MJW21196 operates as a linear-mode NPN bipolar junction transistor optimized for analog signal fidelity rather than switching efficiency. Its Perforated Emitter construction improves thermal stability and gain linearity under high-current bias, while its SOA curve supports sustained operation up to 80 V and 2.25 A for non-repetitive pulses.
Electrical behavior is characterized across temperature (−65°C to +150°C), with hFE maintained ≥8 at IC = 16 A and VCE = 5 V, VCE(sat) ≤ 3 V at IC = 16 A/IB = 3.2 A, and fT = 4 MHz at IC = 1 A/VCE = 10 V - confirming suitability for audio-frequency amplification and precision linear control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 250 Vdc - maximum collector-emitter voltage before breakdown under open-base conditions; defines rail voltage limit in Class-AB audio output stages. |
| IC (continuous) | 16 Adc - continuous collector current rating; sets thermal design baseline for heatsink sizing at 200 W dissipation. |
| hFE min | 20 @ IC = 8 A - guaranteed DC current gain ensures stable biasing in emitter-follower or common-emitter linear amplifiers. |
| RJC | 0.7 °C/W - low junction-to-case thermal resistance enables efficient heat transfer to external heatsinks in high-power audio modules. |
| THD | 0.08% (matched pair) - measured at 28.3 VRMS, 1 kHz, 100 W load; confirms low distortion performance in high-end audio output circuits. |
| fT | 4 MHz - current-gain bandwidth product supports full-audio-spectrum amplification without phase degradation. |
| Cob | 500 pF - output capacitance at VCB = 10 V; impacts high-frequency stability and compensation network design in feedback amplifiers. |
Pinout & Package
Package: TO-247 (Case 340L), isolated collector tab, Pb-free option available as MJW21196G. Mounting requires insulated hardware due to electrically active collector tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal for forward-biased BJT operation; requires current-limited drive (IB ≤ 5.0 Adc continuous) to avoid thermal runaway. |
| 2 | Collector | Main high-current output terminal; electrically connected to metal tab - must be insulated from heatsink unless circuit ground reference permits. |
| 3 | Emitte | Power return path; carries full load current in common-emitter configuration; connects to output node in emitter-follower designs. |
Key Features
| Feature | Design Value |
|---|---|
| Perforated Emitter technology | Enhances thermal uniformity and gain linearity under high-current, high-temperature operation - critical for low-distortion audio amplification. |
| High SOA (2.25 A / 80 V / 1 s) | Enables robust transient handling in unprotected linear output stages without secondary breakdown during clipping or overload events. |
| Total Harmonic Distortion characterization | Validated THD ≤ 0.08% in matched-pair configuration - allows precise complementary symmetry in push-pull amplifier designs. |
| hFE ≥ 20 @ 8 A | Ensures predictable base drive requirements and stable quiescent current setting in Class-AB bias networks. |
Applications
| High-Fidelity Audio Amplifiers | Disk Head Positioning Drivers |
|---|---|
Use Scenario: Output stage in discrete Class-AB power amplifiers delivering 100+ W into 4–8 Ω loads. IC Role / Device Role / Timing Role: NPN power output transistor in complementary pair with MJW21195 (PNP), conducting positive half-cycle current. Use Value: Low THD (0.08%) and high SOA enable clean, undistorted output even during dynamic transients and thermal stress. | Use Scenario: Precision current driver for voice coil actuators in HDD servo systems requiring fast, linear position control. IC Role / Device Role / Timing Role: Linear current source regulating bidirectional coil current with minimal thermal drift and gain nonlinearity. Use Value: Perforated Emitter design maintains hFE stability across temperature swings, ensuring consistent positioning accuracy over duty cycles. |
| Linear Regulator Pass Elements | Industrial Motor Control Stages |
Use Scenario: Series pass transistor in high-current, low-noise linear regulators for test equipment and analog instrumentation. IC Role / Device Role / Timing Role: High-voltage, high-current series regulator element dissipating up to 200 W while maintaining tight output voltage regulation. Use Value: RJC = 0.7°C/W and wide VCEO = 250 V support stable operation under variable load and input ripple conditions. | Use Scenario: Discrete H-bridge half-bridge driver in low-frequency (<10 kHz), high-torque industrial motor controllers. IC Role / Device Role / Timing Role: NPN switch in linear or quasi-linear mode controlling motor winding current with analog feedback. Use Value: SOA-rated operation at 80 V/2.25 A enables safe conduction during stall conditions without device failure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SC5200 | VCEO = 230 V, IC = 15 A, hFE ≥ 80 @ 8 A, RJC = 0.8°C/W, no THD characterization | Higher hFE reduces base drive complexity but lacks THD validation and SOA data at 80 V | Select when high DC gain and cost sensitivity outweigh THD and SOA verification needs. |
| MJE15034 | VCEO = 250 V, IC = 8 A, hFE ≥ 20 @ 4 A, RJC = 1.5°C/W, SOA rated to 1.5 A/80 V | Lower current and thermal capability limits use to <100 W applications; no Perforated Emitter | Select for space-constrained designs where 8 A suffices and TO-220 footprint is preferred. |
Compared with 2SC5200 and MJE15034, the MJW21196 delivers verified THD performance, superior SOA at 80 V, and lower thermal resistance - making it the preferred choice for high-power, high-fidelity linear amplification where distortion and reliability under transient stress are critical.
Availability
MJW21196 is available at Aetrix Electronics and suitable for high-fidelity audio amplifiers, disk head positioners, and linear regulator designs requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for MJW21196 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The MJW21196 belongs to onsemi's Silicon Power Transistor product line, engineered specifically for high-linearity, high-power analog applications including audio output stages and precision motion control drivers.
FAQ
What is the maximum continuous collector current rating for the MJW21196?
The MJW21196 has a maximum continuous collector current rating of 16 A at TC = 25°C. This rating assumes proper heatsinking and derating per the 1.43 W/°C thermal derating curve above 25°C. Operation beyond this current without thermal mitigation risks exceeding the 150°C maximum junction temperature and triggering secondary breakdown.
Does the MJW21196 have a Pb-free version, and how is it marked?
Yes, the Pb-free version is designated MJW21196G and uses the same TO-247 package. It is marked with a "G" suffix in the date code (e.g., AYWWG), where "G" indicates compliance with RoHS Directive 2011/65/EU. The electrical and thermal specifications are identical to the standard MJW21196.
What does "Perforated Emitter technology" mean for the MJW21196?
Perforated Emitter technology in the MJW21196 refers to a proprietary emitter geometry that improves current density uniformity and thermal distribution across the die. This results in enhanced gain linearity, reduced thermal runaway risk, and improved SOA performance - especially critical in high-power linear amplifier applications where localized heating degrades fidelity.
Can the MJW21196 be used in a complementary pair with the MJW21195?
Yes, the MJW21196 (NPN) is explicitly designed as a complementary pair with the MJW21195 (PNP). Both share identical TO-247 packaging, matching SOA curves, Perforated Emitter construction, and THD characterization - enabling symmetrical push-pull output stages with tightly matched gain and thermal behavior.
What is the safe operating area (SOA) limit for the MJW21196 at 80 V?
The MJW21196 is rated for 2.25 A at 80 V for 1 second in non-repetitive operation, as defined in the SOA curve (Figure 14). This rating assumes TJ(pk) ≤ 150°C and accounts for both thermal and secondary breakdown limits. Continuous operation at this voltage requires significant derating based on case temperature and heatsink performance.
MJW21196 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 16 A
- Voltage - Collector Emitter Breakdown (Max):
- 250 V
- Vce Saturation (Max) @ Ib, Ic:
- 3V @ 3.2A, 16A
- Current - Collector Cutoff (Max):
- 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 20 @ 8A, 5V
- Power - Max:
- 200 W
- Frequency - Transition:
- 4MHz
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-3
MJW21196 FAQ
1.How can I place an order for MJW21196 through Aetrix?
Please submit a Request for Quotation (RFQ) for MJW21196 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MJW21196 reliable?
The price and inventory of MJW21196 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MJW21196 is usually 5 days.
3.What payment methods are accepted for MJW21196?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MJW21196 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MJW21196?
MJW21196 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MJW21196 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MJW21196?
For technical support, including MJW21196 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MJW21196 requirements.
6.How does Aetrix verify that MJW21196 is sourced from the original manufacturer or authorized distributors?
All MJW21196 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MJW21196 meets industry standards.
7.What is the process for return or replacement of MJW21196?
All MJW21196 units undergo pre-shipment inspection (PSI). If there is an issue with MJW21196, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MJW21196 part is unused and in its original packaging.
Return procedure for MJW21196:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MJW21196 Tags

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