onsemi MM3Z3V3T1

Overview

MM3Z3V3T1 from onsemi is a 3.3 V, 200 mW surface-mount Zener diode in SOD−323 package, with nominal Zener voltage of 3.3 V (min 3.1 V, max 3.5 V) at 5 mA test current, dynamic impedance ≤95 Ω, and leakage current ≤5 µA at 1.0 V reverse bias - used for precision voltage reference and overvoltage protection in space-constrained portable electronics.

For engineers reviewing the MM3Z3V3T1 datasheet, pinout, applications, or equivalent options, key selection factors include its 3.3 V regulation tolerance, low 95 Ω Zener impedance at 5 mA, −3.5 mV/°C temperature coefficient, 450 pF capacitance at 0 V, and Pb-free SOD−323 footprint compatibility with high-density PCB layouts.

Technical Context

This device operates as a two-terminal voltage reference diode, conducting in reverse breakdown to clamp voltage at ~3.3 V when reverse-biased above its Zener threshold. It exhibits a negative temperature coefficient of −3.5 mV/°C and maintains stable regulation across −65°C to +150°C junction temperature range.

Designed for low-power, low-leakage applications, it delivers 5 µA max reverse leakage at VR = 1.0 V and supports steady-state dissipation of 200 mW on FR-5 board at 25°C, derating linearly at 1.5 mW/°C above ambient.

Key Specifications

Pinout & Package

SOD−323 surface-mount plastic package (Case 477, Style 1), dimensions 1.7 mm × 1.25 mm × 0.9 mm, cathode marked by band, mountable in any orientation, UL 94 V−0 rated, Pb-free plating available.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Compared with BZX384-B3V3 and MMSZ4685, the MM3Z3V3T1 offers the tightest Zener voltage tolerance (±0.2 V), lowest dynamic impedance, and smallest footprint - making it optimal for miniaturized, low-leakage, thermally stable 3.3 V reference and clamping functions.

Availability

MM3Z3V3T1 is available at Aetrix Electronics and suitable for smartphone power rail clamping, wearable sensor bias reference, and IoT node battery monitor threshold applications requiring stable component supply, consistent parametric performance, and RoHS-compliant sourcing.

Supply support for MM3Z3V3T1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MM3Z3V3T1 belongs to the MM3ZxxxT1 series of 200 mW Zener regulators designed specifically for space-constrained, low-power voltage reference and overvoltage protection in portable and high-density electronic systems.

FAQ

What is the Zener voltage tolerance of MM3Z3V3T1 at 5 mA test current?

The MM3Z3V3T1 has a guaranteed Zener voltage range of 3.1 V to 3.5 V at I_ZT = 5 mA, corresponding to a ±0.2 V absolute tolerance around the nominal 3.3 V rating. This tolerance is specified in the Electrical Characteristics table on page 2 of the official onsemi datasheet (Rev. 7, November 2006), and applies under TA = 25°C conditions with pulse testing to minimize self-heating effects. The MM3Z3V3T1 maintains this specification across its qualified production lot.

Does MM3Z3V3T1 support Pb-free soldering processes?

Yes, the MM3Z3V3T1 is offered in a Pb-free version denoted by the "G" suffix (MM3Z3V3T1G), with Sn-only lead plating compatible with standard reflow profiles up to 260°C for 10 seconds. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements and is rated for UL 94 V−0 flammability. Its SOD−323 package is qualified for both Pb−Sn and Pb-free assembly without derating.

What is the maximum reverse leakage current for MM3Z3V3T1 at 1.0 V bias?

The MM3Z3V3T1 specifies a maximum reverse leakage current (I_R) of 5 µA at V_R = 1.0 V and TA = 25°C, as confirmed in the Electrical Characteristics table on page 2 of the onsemi datasheet. This value is measured under DC conditions and reflects the diode's ability to hold off low-voltage transients while minimizing standby current draw - a critical parameter for battery-operated devices using the MM3Z3V3T1 as a reference or clamp.

Can MM3Z3V3T1 be used in place of MM3Z3V0T1 for tighter voltage regulation?

No - the MM3Z3V3T1 and MM3Z3V0T1 are distinct parts with non-overlapping Zener voltage ranges: MM3Z3V3T1 is 3.1–3.5 V, while MM3Z3V0T1 is 2.8–3.2 V. Substituting MM3Z3V3T1 for MM3Z3V0T1 would raise the regulation point by ~0.3 V, potentially violating downstream IC input voltage limits. The MM3Z3V3T1 must be selected only where 3.3 V nominal regulation is explicitly required and validated in the target circuit.

What is the thermal resistance junction-to-ambient (R_JA) for MM3Z3V3T1 on FR-5 board?

The MM3Z3V3T1 has a specified thermal resistance of R_JA = 635°C/W when mounted on an FR-5 printed circuit board, as stated in the Maximum Ratings table on page 1 of the onsemi datasheet. This value assumes standard minimum pad layout (FR-4 minimum pad referenced in Note 1) and defines the temperature rise per milliwatt of dissipated power - enabling thermal design margining for continuous 200 mW operation at ambient temperatures up to 25°C before derating begins.