Nexperia USA Inc. MM3Z43VT1GX

Overview

MM3Z43VT1GX from Nexperia is a Zener voltage regulator diode in SOD323 (SC-76) package, designed for precision voltage reference and overvoltage protection in low-power circuits. It delivers a nominal Zener voltage of 43 V with ±5 % tolerance, 300 mW total power dissipation, 30.1 Ω differential resistance at I_Z = 2 mA, and operates across −55 °C to +150 °C ambient temperature - deployed in power supply feedback loops and sensor biasing networks.

For engineers reviewing the MM3Z43VT1GX datasheet, MM3Z43VT1GX pinout, MM3Z43VT1GX application, or MM3Z43VT1GX equivalent, this page provides verified electrical characteristics, thermal behavior, cathode/anode terminal mapping, and validated alternatives for voltage regulation design-in at industrial and consumer electronics scale.

Technical Context

This device operates in reverse breakdown mode with a specified Zener voltage range of 40.0 V to 46.0 V at I_Z = 2 mA, exhibiting a low temperature coefficient of ±0.05 mV/K and reverse current ≤375 µA at V_R = 30 V. Its junction-to-ambient thermal resistance is 415 K/W on FR4 PCB, supporting stable regulation under transient load conditions.

The diode features non-repetitive peak reverse power dissipation up to 40 W (t_p = 100 µs), forward voltage ≤1.1 V at I_F = 100 mA, and capacitance of 40 pF at f = 1 MHz and V_R = 0 V - enabling use in fast-response clamping and reference stabilization where low parasitic capacitance and predictable knee behavior are critical.

Key Specifications

Pinout & Package

SOD323 (SC-76) plastic surface-mounted package with cathode-indicating marking bar; compact 1.35 mm × 0.85 mm outline, 0.45 mm height, and tin-plated terminations compatible with reflow and wave soldering per IPC-J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Compared with BZX384-B43,115, MM3Z43VT1GX offers slightly higher leakage but identical package and cost structure; versus 1N4749A, it trades thermal capacity and mechanical ruggedness for PCB space savings and automated manufacturing compatibility.

Availability

MM3Z43VT1GX is available at Aetrix Electronics and suitable for power supply feedback regulation, sensor biasing reference, overvoltage clamp protection, and signal-level translation requiring stable component supply and consistent parametric performance across production batches.

Supply support for MM3Z43VT1GX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

The MM3Z series targets general-purpose voltage regulation in space-constrained, cost-sensitive applications - delivering tight-tolerance Zener performance in miniature SOD323 packages for consumer, computing, and industrial power management.

FAQ

What is the maximum continuous reverse current the MM3Z43VT1GX can sustain without degradation?

The device is rated for a maximum forward current of 200 mA, but its continuous reverse operation is governed by power dissipation limits. At 25 °C ambient on FR4 PCB, sustained reverse current must be limited to ≤7 mA to stay within the 300 mW total power dissipation rating - calculated as I_Z × V_Z ≤ 0.3 W. Derating applies above 25 °C per the 415 K/W thermal resistance.

How does the marking code 'DR' correspond to MM3Z43VT1GX?

'DR' is the standardized top-side marking for MM3Z43VT1GX per Nexperia's ordering table, applied directly on the SOD323 package body. The bar adjacent to pin 1 identifies the cathode, and 'DR' uniquely distinguishes this 43 V variant from other members of the MM3Z series (e.g., 'DS' for 47 V, 'DT' for 51 V), ensuring traceability during visual inspection and automated optical recognition.

Can MM3Z43VT1GX replace a 1N5257B in an existing design?

No - the 1N5257B is a 30 V Zener diode in DO-35 package, whereas MM3Z43VT1GX is a 43 V device in SOD323. Direct substitution would cause incorrect regulation or clamp thresholds. For functional replacement, consider MM3Z30VT1GX (30 V, same series/package); however, verify matching r_diff, leakage, and thermal profile, as MM3Z30VT1GX has 21.0 Ω r_diff and 300 µA leakage at 20 V.

What is the typical reverse recovery time for MM3Z43VT1GX during transient clamping?

Zener diodes like MM3Z43VT1GX do not specify reverse recovery time (t_rr) because they operate in steady-state reverse breakdown, not switching mode. Their response to fast transients is governed by junction capacitance (40 pF) and series resistance - resulting in sub-nanosecond effective turn-on delay for surge suppression, confirmed by square-wave surge testing at 100 µs pulse width per datasheet Section 4.