Nexperia USA Inc. MM3Z4V3T1GX

Overview

MM3Z4V3T1GX from Nexperia is a Zener voltage regulator diode in SOD323 (SC-76) package, designed for precision low-power voltage reference and clamping in space-constrained circuits. It delivers a nominal 4.3 V Zener voltage at 5 mA with ±5 % tolerance, 3.0 Ω differential resistance, and 90 pF capacitance at 1 MHz, supporting stable regulation in power supply feedback paths and overvoltage protection circuits.

For engineers reviewing the MM3Z4V3T1GX datasheet, MM3Z4V3T1GX pinout, MM3Z4V3T1GX application, or MM3Z4V3T1GX equivalent, this page provides verified electrical characteristics, thermal behavior, junction-to-ambient thermal resistance (415 K/W), cathode/anode terminal mapping, and real-world use cases in voltage reference design, ESD clamp networks, and analog signal conditioning.

Technical Context

This device operates as a two-terminal silicon Zener diode, conducting in reverse breakdown to maintain a stable reference voltage across its terminals when biased above V_Z. Its 4.3 V nominal working voltage falls within the low-voltage Zener range where temperature coefficient is negative (−3.5 mV/K), enabling predictable drift compensation in temperature-sensitive references.

The SOD323 package supports surface-mount reflow assembly with defined solder land patterns, while its 300 mW total power dissipation and 40 W non-repetitive peak reverse power rating allow brief surge handling during transient suppression-critical for input-stage protection in low-current sensor interfaces and microcontroller I/O conditioning.

Key Specifications

Pinout & Package

SOD323 (SC-76) plastic surface-mounted package with 2 leads: compact 1.35 mm × 0.85 mm footprint, 0.45 mm height, and cathode-marked top-side bar.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage reference applications.

Compared with BZX384-B4V3,115, MM3Z4V3T1GX offers identical voltage grading but lower cost and broader availability in high-volume consumer production; versus MMBZ5225B-7-F, it trades power handling for 40 % smaller PCB area and better high-frequency performance due to lower capacitance.

Availability

MM3Z4V3T1GX is available at Aetrix Electronics and suitable for voltage reference design, ESD clamp networks, and analog signal conditioning requiring stable component supply, consistent parametric binning, and full traceability from wafer lot to shipment.

Supply support for MM3Z4V3T1GX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a leading semiconductor manufacturer headquartered in Nijmegen, Netherlands, specializing in high-volume, high-reliability discrete and logic devices for automotive, industrial, and consumer markets.

The MM3Z series targets general-purpose voltage regulation in space-constrained, cost-sensitive applications-emphasizing tight tolerance control, low thermal resistance, and compatibility with standard SMT assembly processes.

FAQ

What is the maximum continuous reverse current the MM3Z4V3T1GX can sustain without exceeding its 300 mW power limit?

At its nominal 4.3 V Zener voltage, the device sustains up to 69.8 mA continuously (300 mW ÷ 4.3 V) before reaching thermal shutdown. However, datasheet limiting values specify 200 mA absolute maximum forward current and 1000 µA reverse leakage at 1 V-so practical continuous Zener current is capped at 60 mA to maintain junction temperature below 150 °C on standard FR4 PCBs.

How does the −3.5 mV/K temperature coefficient affect circuit performance over −40 °C to +85 °C ambient range?

Over that 125 °C span, the Zener voltage shifts by approximately −437.5 mV (−3.5 mV/K × 125 K), resulting in a final V_Z of ~3.86 V at +85 °C. This drift is fully characterized and repeatable, allowing compensation via resistor networks or digital calibration-especially valuable in precision sensor bridges where offset tracking matters more than absolute value.

Can MM3Z4V3T1GX be used in place of a 4.3 V Schottky diode for reverse polarity protection?

No-it is not suitable for reverse polarity protection because it conducts heavily in reverse bias above 4.3 V, unlike Schottky diodes which block reverse current. Using it in series with a load would cause catastrophic failure under reverse voltage. Its role is shunt regulation/clamping, not series blocking; substitute only with purpose-built protection diodes like PMEG4010CEH.

Is the 350 pF junction capacitance measured at zero bias or at rated Zener voltage?

The 350 pF value is measured at V_R = 0 V and f = 1 MHz per Table 8 footnote [1], representing maximum capacitance in unbiased state. At operating Zener voltage (4.3 V), capacitance drops significantly-typically to ~120 pF-due to depletion region widening, making it suitable for signal-line clamping where bandwidth preservation is critical.