Nexperia USA Inc. MM3Z5V6T1GX

Overview

MM3Z5V6T1GX from Nexperia is a 5.6 V ±5 % tolerance Zener diode in SOD323 (SC-76) package, rated for 300 mW total power dissipation and 40 W non-repetitive peak reverse power, with 1.0 Ω typical differential resistance at I_Z = 5 mA and −2.0 mV/K temperature coefficient - used for precision voltage reference and overvoltage clamping in low-power analog sensor interfaces.

For engineers reviewing the MM3Z5V6T1GX datasheet, MM3Z5V6T1GX pinout, MM3Z5V6T1GX application, or MM3Z5V6T1GX equivalent, this page delivers verified electrical specs, thermal behavior, cathode/anode terminal mapping, and direct-fit alternatives for stable voltage regulation in space-constrained PCB designs.

Technical Context

This Zener diode operates in reverse breakdown mode with tightly controlled V_Z = 5.31–5.92 V at I_Z = 5 mA, delivering low dynamic impedance (r_diff ≤ 1.0 Ω) and predictable temperature drift (S_Z = −2.0 mV/K). Its junction-to-ambient thermal resistance is 415 K/W on standard FR4 PCB.

Designed for DC voltage stabilization and transient suppression, it supports forward conduction up to 100 mA (V_F ≤ 1.1 V), withstands ambient temperatures from −55 °C to +150 °C, and maintains reverse leakage < 100 µA at 0.5 mA test current.

Key Specifications

Pinout & Package

Package: SOD323 (SC-76), surface-mount plastic case with 2 leads, 1.35 mm × 0.85 mm footprint, 0.45 mm height, cathode marked by bar on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage reference applications.

Compared with BZX384-B5V6,115, MM3Z5V6T1GX offers 50 % higher power margin and half the dynamic impedance; versus 1N5232B, it delivers 15× lower r_diff and documented thermal coefficient - making it superior for precision, miniaturized, and thermally demanding applications.

Availability

MM3Z5V6T1GX is available at Aetrix Electronics and suitable for industrial sensor conditioning, USB port protection, low-power IoT node regulation, and automotive cabin control panel reference requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for MM3Z5V6T1GX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability logic, discrete, and MOSFET solutions, headquartered in Nijmegen, Netherlands, serving automotive, industrial, and consumer markets.

The MM3Z series targets cost-sensitive, space-constrained applications needing stable voltage references - designed specifically for SMT manufacturing scalability, thermal resilience, and consistent parametric performance across wide ambient conditions.

FAQ

What is the maximum continuous reverse current (I_Z) this Zener can handle without exceeding its 300 mW rating?

At nominal V_Z = 5.6 V, the absolute maximum continuous I_Z is 53.6 mA (300 mW ÷ 5.6 V), but derating is required above 25 °C ambient. The datasheet specifies 200 mA as absolute max forward current, but reverse operation must stay within thermal limits defined by R_th(j-a) = 415 K/W and T_j ≤ 150 °C.

Can MM3Z5V6T1GX be used in series or parallel configurations for higher voltage or current capability?

No - Zener diodes exhibit manufacturing spread in V_Z and temperature coefficient; paralleling causes current hogging, and series stacking introduces cumulative tolerance errors and mismatched thermal drift. For higher voltage, select a single higher-V_Z part (e.g., MM3Z12VT1G); for higher current, use an active regulator or external transistor-assisted configuration.

Does the SOD323 package support reflow soldering per JEDEC J-STD-020, and what is the peak profile limit?

Yes - Nexperia qualifies MM3Z5V6T1GX for standard lead-free reflow per J-STD-020D. The peak temperature is 260 °C for ≤ 30 seconds, with ramp-up rate ≤ 3 °C/s and ramp-down rate ≤ 6 °C/s. Figure 12 in the datasheet provides the exact solder land pattern and paste volume recommendations for reliable attachment.

How does the −2.0 mV/K temperature coefficient affect regulation accuracy over a −40 °C to +125 °C range?

Over that 165 K span, V_Z shifts by approximately −330 mV (−2.0 mV/K × 165 K), resulting in a final V_Z of ~5.27 V at +125 °C and ~5.93 V at −40 °C - a total variation of ±5.9 % around nominal. This is within the device's ±5 % initial tolerance band and remains usable for non-critical references where absolute accuracy is secondary to stability under bias.