onsemi MM3Z62VB

Overview

MM3Z62VB from onsemi is a 62 V ±2% tolerance Zener diode in SOD−323FL package, rated for 200 mW power dissipation, 2 mA test current (IZT), and 43.4 V reverse breakdown voltage (VR) at 0.045 µA leakage. It provides precision voltage regulation in low-power analog reference and overvoltage protection circuits.

For engineers reviewing the MM3Z62VB datasheet, pinout, applications, or equivalent options, this page delivers verified electrical specs, thermal resistance (595 °C/W), Zener impedance (202 Ω at IZT), cathode/anode terminal roles, and direct alternatives for voltage reference design and ESD-robust signal conditioning.

Technical Context

The MM3Z62VB operates as a two-terminal shunt regulator with sharp reverse breakdown at 62 V nominal, specified under 10 ms pulse test conditions. Its Zener impedance of 202 Ω at 2 mA reflects stable regulation performance across temperature, supported by a maximum junction temperature of 150 °C and storage range from −65 to +150 °C.

Designed for surface-mount use in space-constrained PCBs, it features matte tin (Pb-free) finish and complies with JEDEC SOD−323FL mechanical outline CASE 477AB. The device exhibits 0.045 µA reverse leakage at VR = 43.4 V, confirming tight control of off-state conduction in high-impedance bias networks.

Key Specifications

Pinout & Package

SOD−323FL package: ultra-thin, leadless, Pb-free surface-mount case per JEDEC outline CASE 477AB; dimensions 1.7 mm × 1.25 mm × 0.95 mm (L × W × H).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with BZX384-B62 and MMSZ4689-TP, the MM3Z62VB delivers tighter tolerance and thinner profile than the former, and superior voltage accuracy versus the latter-making it optimal for space-constrained, high-precision reference designs where 62 V stability is critical.

Availability

MM3Z62VB is available at Aetrix Electronics and suitable for voltage reference, overvoltage protection, ESD-safe signal conditioning, and low-power supply regulation requiring stable component supply and consistent Zener characteristics across production lots.

Supply support for MM3Z62VB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The MM3Z series is part of onsemi's precision Zener diode portfolio, engineered for high-accuracy voltage regulation and robust transient suppression in miniaturized SMT designs.

FAQ

What is the Zener voltage tolerance of MM3Z62VB?

The MM3Z62VB has a Zener voltage tolerance of ±2% at 2 mA test current, meaning its actual breakdown voltage falls between 60.76 V and 63.24 V under standard test conditions. This tight tolerance makes MM3Z62VB suitable for applications demanding high voltage reference accuracy, such as precision analog measurement circuits and regulated bias networks where drift must be minimized.

What package type does MM3Z62VB use and what are its key mechanical features?

MM3Z62VB uses the SOD−323FL package-a thin-profile, leadless surface-mount case defined by JEDEC outline CASE 477AB. Its dimensions are 1.7 mm × 1.25 mm × 0.95 mm, with matte tin (Pb-free) terminations. This ultra-thin form factor enables high-density PCB layouts in space-constrained applications like wearables and modular sensor nodes, while maintaining compatibility with standard SMT reflow processes.

What is the maximum power dissipation rating for MM3Z62VB and how does it affect thermal design?

MM3Z62VB is rated for 200 mW maximum power dissipation at 25 °C ambient. Its thermal resistance (RJA) is 595 °C/W, so at full power, junction temperature rises ~119 °C above ambient-requiring careful layout with adequate copper pour and airflow in enclosed environments. For reliable long-term operation, designers should limit average power to ≤100 mW in ambient temperatures above 50 °C, ensuring TJ stays below the 150 °C maximum.

How does the reverse leakage current of MM3Z62VB impact high-impedance circuit performance?

MM3Z62VB specifies 0.045 µA maximum reverse leakage (IR) at VR = 43.4 V, measured well below its 62 V Zener point. In high-impedance voltage divider or reference bias networks-such as those feeding ADC inputs or op-amp comparators-this ultra-low leakage minimizes DC error and prevents unintended node loading. For example, in a 10 MΩ divider leg, IR contributes only ~0.45 mV offset, preserving system-level accuracy without additional compensation.

Can MM3Z62VB be used for ESD protection, and if so, what are its limitations?

Yes, MM3Z62VB can serve as bidirectional ESD protection due to its symmetric Zener breakdown behavior near 62 V, making it effective against positive and negative transients. However, its 200 mW power rating limits single-event energy absorption-so it is best suited for low-energy IEC 61000-4-2 contact discharges (≤4 kV) or as a secondary clamp behind TVS diodes. For primary 8 kV ESD protection, a dedicated low-capacitance TVS with higher peak pulse power is recommended alongside MM3Z62VB for fine regulation.