onsemi MM3Z7V5T1

Overview

MM3Z7V5T1 from onsemi is a 7.5 V ±5% Zener voltage regulator diode in SOD−323 package, rated for 200 mW steady-state power dissipation at 25°C, with 15 Ω maximum Zener impedance at 5 mA test current and 1 µA reverse leakage at 5.0 V. It provides precision voltage reference and overvoltage protection in space-constrained portable electronics.

For engineers reviewing the MM3Z7V5T1 datasheet, pinout, applications, or equivalent options, key selection criteria include nominal Zener voltage (7.5 V), temperature coefficient (+2.5 mV/°C), low capacitance (140 pF at 0 V), ESD rating (>16 kV HBM), and SOD−323 mechanical compatibility with high-density PCB layouts.

Technical Context

This Zener diode operates in reverse breakdown to maintain stable voltage across its terminals under varying load and input conditions. Its 200 mW power rating and 635 °C/W junction-to-ambient thermal resistance define thermal limits in FR-4 board mounting, while the 15 Ω dynamic impedance at 5 mA ensures tight regulation under typical bias conditions.

The device features a cathode-indicated polarity band, Pb-free plating option (denoted by 'G' suffix), and UL 94 V−0 flammability rating. Its 1.7 mm × 1.25 mm body outline and 0.9 mm height enable integration into ultra-thin handheld devices without compromising solder joint reliability at 260°C for 10 seconds.

Key Specifications

Pinout & Package

SOD−323 surface-mount package with 1.7 mm × 1.25 mm footprint and 0.9 mm profile; void-free molded plastic case, corrosion-resistant finish, and Pb−Sn or Sn-only plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Compared with BZX384-B7V5 and MMSZ5236B, the MM3Z7V5T1 offers optimal balance of miniaturization (1.7 mm × 1.25 mm), low leakage (1 µA), and adequate 200 mW dissipation for compact, battery-sensitive designs-without requiring PCB redesign or sacrificing signal integrity.

Availability

MM3Z7V5T1 is available at Aetrix Electronics and suitable for smartphone power management, USB interface protection, and IoT sensor node reference applications requiring stable component supply and consistent parametric performance across production lots.

Supply support for MM3Z7V5T1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, high-performance silicon solutions for automotive, industrial, cloud, medical, and IoT applications.

The MM3Z series is part of onsemi's precision Zener regulator portfolio designed specifically for space-constrained, low-power voltage reference and protection functions in portable and high-density electronic systems.

FAQ

What is the Zener voltage tolerance of MM3Z7V5T1?

The MM3Z7V5T1 has a Zener voltage range of 7.0 V to 7.9 V at 5 mA test current, corresponding to a nominal 7.5 V with ±5% tolerance. This specification is guaranteed over ambient temperatures from −65°C to +150°C and is measured using pulse testing to avoid self-heating effects. The MM3Z7V5T1 maintains this tolerance without requiring external calibration or trimming in standard PCB layouts.

Does MM3Z7V5T1 support Pb-free assembly processes?

Yes, MM3Z7V5T1 is available in a Pb-free package, indicated by the 'G' suffix in the ordering code (MM3Z7V5T1G). It uses Sn-only plating and complies with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), supporting standard reflow profiles up to 260°C for 10 seconds. The MM3Z7V5T1 meets RoHS Directive 2011/65/EU and is qualified for lead-free manufacturing without derating.

What is the maximum reverse leakage current for MM3Z7V5T1?

The MM3Z7V5T1 specifies a maximum reverse leakage current of 1 µA at VR = 5.0 V and TA = 25°C. This value is verified per the Electrical Characteristics table in the official datasheet and remains stable across the full storage temperature range (−65°C to +150°C). For low-power IoT sensor nodes, this leakage ensures minimal battery drain in always-on reference configurations using the MM3Z7V5T1.

Can MM3Z7V5T1 be used in high-frequency signal paths?

The MM3Z7V5T1 exhibits 140 pF capacitance at 0 V bias and 1 MHz, making it suitable for DC biasing and low-speed clamping but not recommended for RF signal coupling above ~10 MHz. Its capacitance increases with reverse bias reduction, so design margins must account for this in AC-coupled applications. For RF front-end biasing where signal integrity is critical, the MM3Z7V5T1 should be placed outside active signal paths or evaluated with network analyzer validation.

How does temperature affect the Zener voltage of MM3Z7V5T1?

The MM3Z7V5T1 has a positive temperature coefficient of +2.5 mV/°C, meaning its Zener voltage increases linearly with junction temperature. This behavior is specified in the Electrical Characteristics table and validated across −65°C to +150°C. In precision reference applications, this drift must be compensated in firmware or hardware; the MM3Z7V5T1's predictable coefficient enables accurate modeling without additional sensing components.