onsemi MM3Z8V2C

Overview

MM3Z8V2C from onsemi is a 8.2 V ±5% Zener diode in SOD−323FL package, rated for 200 mW power dissipation, with 14 Ω zener impedance at 5 mA test current and 0.63 µA reverse leakage at 5 V, used for precision voltage regulation and reference in low-power analog circuits.

For engineers reviewing the MM3Z8V2C datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, thermal limits, package dimensions, marking code (ZD), and direct alternatives for voltage reference design, ESD-protected biasing, and compact regulator feedback networks.

Technical Context

This device operates as a two-terminal silicon Zener diode optimized for stable voltage reference under reverse-biased conditions. It exhibits a nominal zener voltage of 8.2 V with ±5% tolerance, tested at IZT = 5 mA, and maintains low dynamic impedance (14 Ω) to minimize output variation under load changes.

Thermal resistance is 595 °C/W (junction-to-ambient, PCB-mounted), limiting continuous power handling to 200 mW at 25 °C ambient. Reverse leakage remains ≤0.63 µA at VR = 5 V, supporting high-impedance sensing and low-quiescent-current applications.

Key Specifications

Pinout & Package

SOD−323FL is a two-terminal surface-mount package with cathode-marked anode-cathode orientation. The device has no internal circuitry beyond the Zener junction; terminals serve only as anode (pin 1) and cathode (pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode voltage reference applications.

Compared with MM3Z8V2C, BZX384-B8V2 offers identical regulation but slightly reduced thermal efficiency in dense layouts, while MMSZ4687T1G trades miniaturization for robustness and thermal headroom-making MM3Z8V2C optimal for ultra-compact, low-power reference designs where size and leakage are critical.

Availability

MM3Z8V2C is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, microcontroller reset circuitry, and low-power analog front-end biasing requiring stable component supply and long-term manufacturability.

Supply support for MM3Z8V2C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The MM3Z series is part of onsemi's precision Zener diode portfolio designed specifically for compact, high-reliability voltage reference and regulation in space-constrained, low-power electronic systems.

FAQ

What is the zener voltage tolerance of MM3Z8V2C?

The MM3Z8V2C has a nominal zener voltage of 8.2 V with a tolerance of ±5%, meaning its actual breakdown voltage falls between 7.79 V and 8.61 V when tested at I_ZT = 5 mA. This tolerance is guaranteed across the full operating temperature range and is marked as "C" in the device suffix, confirming compliance with JEDEC standard tolerances for general-purpose Zener references.

What package type does MM3Z8V2C use and what are its key mechanical dimensions?

MM3Z8V2C uses the SOD−323FL package (Case 477AB), measuring 1.7 mm × 1.25 mm × 0.95 mm with a 0.7 mm pitch. Its matte tin finish ensures compatibility with lead-free reflow processes, and the cathode is marked by a band on terminal 2. This ultra-compact outline supports high-density PCB layouts without sacrificing thermal performance when mounted per onsemi's recommended land pattern.

Can MM3Z8V2C be used in both forward and reverse bias configurations?

Yes, MM3Z8V2C functions in both modes: in reverse bias it regulates at ~8.2 V with low dynamic impedance; in forward bias it conducts with ≤1.0 V drop at 10 mA. This dual-mode behavior enables combined clamping and referencing in single-supply analog circuits, such as protecting op-amp inputs while simultaneously establishing a stable bias point-without requiring additional discrete components.

What is the maximum reverse leakage current for MM3Z8V2C and at what voltage is it specified?

The maximum reverse leakage current for MM3Z8V2C is 0.63 µA, specified at V_R = 5 V and T_A = 25 °C. This low leakage ensures minimal error contribution in high-impedance reference divider networks and preserves accuracy in battery-operated systems where quiescent current must remain sub-microampere.

How does the thermal resistance of MM3Z8V2C affect its usable power dissipation at elevated ambient temperatures?

With R_JA = 595 °C/W, MM3Z8V2C derates linearly above 25 °C ambient: at 70 °C ambient, its maximum allowable power drops to approximately 135 mW ((150 °C − 70 °C) / 595 °C/W). This requires careful thermal layout-such as using minimum 10 mm² copper pour-to maintain junction temperature below 150 °C under continuous operation.