onsemi MM5Z3V6ST1

Overview

MM5Z3V6ST1 from onsemi is a 3.6 V ±3.5% Zener diode in SOD−523 package, rated for 200 mW steady-state power dissipation at 25°C, with 90 Ω max Zener impedance at 5 mA test current and 1.0 µA max reverse leakage at 2.88 V. It provides precision voltage regulation in space-constrained portable electronics.

For engineers reviewing the MM5Z3V6ST1 datasheet, pinout, applications, or equivalent options, key selection criteria include Zener voltage tolerance (±3.5%), low-profile SOD−523 footprint (1.20 mm × 0.80 mm × 0.70 mm), ESD robustness (>16 kV HBM), thermal resistance (635 °C/W), and tight ZZK (1000 Ω max at 1 mA).

Technical Context

This device operates as a two-terminal voltage reference diode, conducting in reverse breakdown to clamp voltage at 3.60–3.85 V when biased above its Zener threshold. Its temperature coefficient of −3.5 mV/°C ensures predictable drift over −65°C to +150°C junction range.

Designed for low-power regulation, it delivers stable reference performance with 450 pF max junction capacitance at 0 V and 1 MHz, and maintains 100% matte tin lead finish compatible with Pb-free reflow up to 260°C per MSL 1 qualification.

Key Specifications

Pinout & Package

SOD−523 surface-mount package with cathode marked by band; body dimensions 1.20 mm × 0.80 mm × 0.70 mm; mounting position unrestricted; qualified for 260°C reflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Compared with BZX584-C3V6 and MMSZ4685, the MM5Z3V6ST1 offers the smallest PCB area (1.20 mm × 0.80 mm), lowest profile (0.70 mm), and tightest V_Z tolerance (±3.5%), making it optimal for next-generation compact consumer electronics where board real estate and repeatability are critical.

Availability

MM5Z3V6ST1 is available at Aetrix Electronics and suitable for battery management systems, USB interface protection, RF front-end biasing, and smart card power regulation requiring stable component supply and long-term lifecycle support.

Supply support for MM5Z3V6ST1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The MM5Z series is designed specifically for space-constrained voltage regulation and ESD protection in portable electronics, emphasizing ultra-small SOD−523 packaging, tight Zener tolerances, and high-reliability Pb-free construction.

FAQ

What is the Zener voltage range for MM5Z3V6ST1?

The MM5Z3V6ST1 has a specified Zener voltage range of 3.60 V to 3.85 V at a test current of 5 mA, corresponding to a ±3.5% tolerance around the nominal 3.6 V rating. This range is guaranteed over ambient temperatures from −65°C to +150°C and is measured under standard conditions per the onsemi datasheet revision 6. The MM5Z3V6ST1 maintains this specification without requiring external trimming or calibration.

What is the maximum power dissipation of MM5Z3V6ST1 at 75°C ambient?

At 75°C ambient, the MM5Z3V6ST1's maximum power dissipation is derated linearly from 200 mW at 25°C using the 1.5 mW/°C derating factor. This yields 200 mW − (75 − 25) × 1.5 mW = 125 mW. The device remains functional within its −65°C to +150°C junction temperature range, and the MM5Z3V6ST1's thermal resistance of 635 °C/W confirms this derating aligns with safe junction limits.

Does MM5Z3V6ST1 have Pb-free construction?

Yes, the MM5Z3V6ST1 features 100% matte tin (Sn) lead finish and is certified Pb-free per JEDEC standards. The "T1" suffix denotes compliance with RoHS Directive 2011/65/EU, and the device meets MSL 1 reflow requirements up to 260°C. No lead-containing materials are used in the die attach, bond wires, or molding compound of the MM5Z3V6ST1.

What is the reverse leakage current specification for MM5Z3V6ST1?

The MM5Z3V6ST1 specifies a maximum reverse leakage current (I_R) of 1.0 µA at a reverse voltage (V_R) of 2.88 V (80% of nominal V_Z). This value is measured at T_A = 25°C and ensures minimal quiescent current draw in always-on monitoring circuits. The MM5Z3V6ST1 maintains low leakage across its full operating temperature range, supporting multi-year battery life in portable devices.

Is MM5Z3V6ST1 suitable for ESD protection in USB 2.0 interfaces?

Yes, the MM5Z3V6ST1 is suitable for ESD protection in USB 2.0 interfaces due to its Class 3 HBM rating (>16 kV), low 450 pF junction capacitance at 0 V, and fast response in reverse breakdown. Its SOD−523 footprint allows placement directly at connector pins, and the MM5Z3V6ST1 clamps transients while preserving signal integrity on D+ and D− lines without degrading data rates up to 480 Mbps.