onsemi MM5Z4688T1G

Overview

MM5Z4688T1G from onsemi is a 4.7 V ±5% Zener voltage regulator diode in SOD−523 package, rated for 500 mW power dissipation at TL = 75°C, with 10 µA reverse leakage at VR = 3 V and ESD rating >16 kV (HBM). It serves as a precision voltage reference and overvoltage clamp in space-constrained portable electronics.

For engineers reviewing the MM5Z4688T1G datasheet, pinout, applications, or equivalent options, key selection criteria include nominal Zener voltage tolerance, low IZT of 50 µA, thermal derating slope of 4.0 mW/°C above 75°C, and SOD−523 footprint compatibility with high-density PCB layouts.

Technical Context

This Zener diode operates in reverse breakdown to maintain stable voltage regulation across load and line variations. Its 4.7 V nominal Zener voltage is specified at IZT = 50 µA, with temperature coefficient near zero in the 4–5 V range per Figure 1.

The device exhibits 10 µA reverse leakage at VR = 3 V and forward voltage ≤0.9 V at IF = 10 mA. Thermal resistance is 250 °C/W (junction-to-ambient), enabling reliable operation within −55°C to +150°C junction temperature range.

Key Specifications

Pinout & Package

SOD−523 surface-mount package (1.20 × 0.80 × 0.60 mm), cathode indicated by polarity band; optimized for pick-and-place assembly and high-density routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Compared with BZX584C4V7LT1G and MMSZ4700T1G, MM5Z4688T1G uniquely balances ±5% tolerance, 500 mW power capability, and minimal SOD−523 footprint-making it optimal for next-generation portable designs where board area and thermal margin are co-constrained.

Availability

MM5Z4688T1G is available at Aetrix Electronics and suitable for smartphone power rail clamping, IoT sensor bias referencing, USB-C port protection, and industrial PLC input conditioning requiring stable component supply and full RoHS compliance.

Supply support for MM5Z4688T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and edge applications.

The MM5Z4xxxTxG series was designed specifically for space-constrained voltage regulation and ESD protection in portable electronics, emphasizing ultra-small packaging, low leakage, and high reliability under thermal stress.

FAQ

What is the nominal Zener voltage and tolerance of MM5Z4688T1G?

The MM5Z4688T1G has a nominal Zener voltage of 4.7 V with a tolerance of ±5%, specified as 4.47 V minimum and 4.94 V maximum at test current I_ZT = 50 µA. This tolerance band ensures predictable clamping behavior in low-power bias and protection circuits where tight regulation is balanced against cost and size constraints. The MM5Z4688T1G maintains this specification across its qualified operating temperature range.

What is the maximum power dissipation rating for MM5Z4688T1G and how does it derate with temperature?

The MM5Z4688T1G is rated for 500 mW total power dissipation on FR−5 board at lead temperature (T_L) = 75°C. Above 75°C, it derates linearly at 4.0 mW/°C. This derating curve ensures safe operation up to +150°C junction temperature when board layout and thermal mass are properly managed. The MM5Z4688T1G's 250 °C/W junction-to-ambient thermal resistance informs heatsinking decisions in compact assemblies.

Does MM5Z4688T1G have an automotive qualification, and what is its ESD rating?

The MM5Z4688T1G is not AEC−Q101 qualified; that status applies only to parts marked with the "SZ" prefix (e.g., SZMM5Z4688T1G). However, the MM5Z4688T1G carries an ESD rating of Class 3 (>16 kV) per Human Body Model, verified per JESD22-A114. This makes the MM5Z4688T1G suitable for consumer and industrial applications requiring robust electrostatic handling, though automotive-grade use requires the SZ variant.

What is the reverse leakage current specification for MM5Z4688T1G, and at what voltage is it measured?

The MM5Z4688T1G specifies a reverse leakage current (I_R) of 10 µA maximum at reverse voltage (V_R) = 3 V, measured at T_A = 25°C. This low leakage supports ultra-low-power applications such as battery-backed sensors and always-on monitoring circuits. The MM5Z4688T1G's leakage remains well below 100 µA even at higher temperatures, preserving system efficiency.

What package type and dimensions does MM5Z4688T1G use, and how is polarity identified?

The MM5Z4688T1G uses the SOD−523 surface-mount package with dimensions 1.20 mm × 0.80 mm × 0.60 mm. Polarity is identified by a cathode band at terminal 1; terminal 2 is the anode. This marking aligns with JEDEC standard CASE 502 STYLE 1, ensuring compatibility with automated optical inspection and pick-and-place equipment used in high-volume manufacturing of the MM5Z4688T1G.