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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MMBT200

Name: MMBT200
Brand: onsemi
SKU: MMBT200
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MMBT200

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MMBT200.pdf

Description:: TRANS PNP 45V 0.5A SOT-23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MMBT200 from ON Semiconductor is a PNP general-purpose amplifier transistor in SOT-23 package, rated for -45 V V_CEO, -500 mA I_C, and 350 mW power dissipation at 25°C. It delivers h_FE = 100–350 at I_C = -100 mA and supports switching and linear amplification in low-voltage analog signal paths.

For engineers reviewing the MMBT200 datasheet, pinout, applications, or equivalent options, key selection considerations include its PNP polarity, SOT-23 thermal resistance (R_θJA = 357°C/W), DC current gain range across collector current, saturation voltage behavior at high drive, and suitability for compact board space-constrained designs.

Technical Context

The MMBT200 operates as a silicon PNP bipolar junction transistor fabricated on ON Semiconductor's Process 68. Its design targets general-purpose amplification up to 300 mA continuous collector current, with verified performance in both linear gain stages and saturated-switching configurations.

It exhibits f_T = 250 MHz at V_CE = -20 V and I_C = -20 mA, Cob = 6.0 pF at V_CB = -10 V, and NF = 4.0 dB at I_C = -100 μA - confirming utility in RF-coupled preamplifiers and noise-sensitive low-level signal conditioning.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	-45 V - Maximum safe collector-emitter reverse bias before breakdown in common-emitter configuration
I_C (max)	-500 mA - Continuous collector current limit defining usable dynamic range in switching or amplification
P_D	350 mW at 25°C - Total power dissipation ceiling before thermal derating begins
h_FE	100–350 at I_C = -100 mA - Confirmed DC current gain range enabling predictable biasing in amplifier designs
f_T	250 MHz - Gain-bandwidth product indicating usable frequency limit for small-signal amplification
R_θJA	357°C/W - Junction-to-ambient thermal resistance on standard FR-4 PCB, critical for thermal margin calculation

Pinout & Package

SOT-23 3L surface-mount package with gull-wing leads; JEDEC TO-236AB compliant; land pattern per ON Semiconductor MA03DREV10 recommendation.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Emitter terminal	Current sink node in PNP operation; connects to higher potential rail in common-emitter switch
2 (Base)	Base control terminal	Input for forward-bias current to enable conduction; requires negative drive relative to emitter
3 (Collector)	Collector terminal	Output current path; connects to load and lower-potential node in typical PNP switch configuration

Key Features

Feature	Design Value
High f_T bandwidth	250 MHz enables use in VHF preamplifier stages and fast-switching control circuits
Low V_CE(sat)	-0.2 V at I_C = -10 mA / I_B = -1.0 mA minimizes conduction loss in saturated-switch applications
Low noise figure	4.0 dB at 1 kHz supports high-fidelity audio and sensor front-end amplification
Wide operating temperature	-55°C to +150°C junction range allows deployment in automotive under-hood and industrial environments

Applications

Audio Preamp Stage	Level-Shifting Switch
Use Scenario: Amplifying low-level microphone or line-level signals in portable audio devices. IC Role / Device Role / Timing Role: PNP small-signal amplifier in common-emitter configuration with emitter-degeneration bias. Use Value: 4.0 dB noise figure and h_FE ≥ 100 at I_C = -100 μA ensure clean gain without introducing audible noise.	Use Scenario: Inverting logic-level signals between 3.3 V and 5 V domains in microcontroller I/O interfaces. IC Role / Device Role / Timing Role: Saturated PNP switch controlling pull-up/pull-down paths with fast t_r/t_f ≤ 300 ns. Use Value: V_CE(sat) ≤ -0.4 V at I_C = -200 mA ensures minimal voltage drop and reliable logic threshold crossing.
Current Mirror Reference	Power Supply Enable Control
Use Scenario: Building matched current sources in analog ICs or discrete op-amp bias networks. IC Role / Device Role / Timing Role: Active element in two-transistor current mirror topology with matched process characteristics. Use Value: Process 68 fabrication ensures consistent h_FE tracking and thermal coefficient alignment across paired devices.	Use Scenario: Enabling/disabling 12 V auxiliary rails in embedded power management subsystems. IC Role / Device Role / Timing Role: High-side PNP switch driven by MCU GPIO to control PMOS gate or relay coil. Use Value: -45 V V_CEO rating provides 3× safety margin over 12 V rail, supporting robust fault tolerance.

Audio Preamp Stage

Level-Shifting Switch

Use Scenario: Amplifying low-level microphone or line-level signals in portable audio devices.

IC Role / Device Role / Timing Role: PNP small-signal amplifier in common-emitter configuration with emitter-degeneration bias.

Use Value: 4.0 dB noise figure and h_FE ≥ 100 at I_C = -100 μA ensure clean gain without introducing audible noise.

Use Scenario: Inverting logic-level signals between 3.3 V and 5 V domains in microcontroller I/O interfaces.

IC Role / Device Role / Timing Role: Saturated PNP switch controlling pull-up/pull-down paths with fast t_r/t_f ≤ 300 ns.

Use Value: V_CE(sat) ≤ -0.4 V at I_C = -200 mA ensures minimal voltage drop and reliable logic threshold crossing.

Current Mirror Reference

Power Supply Enable Control

Use Scenario: Building matched current sources in analog ICs or discrete op-amp bias networks.

IC Role / Device Role / Timing Role: Active element in two-transistor current mirror topology with matched process characteristics.

Use Value: Process 68 fabrication ensures consistent h_FE tracking and thermal coefficient alignment across paired devices.

Use Scenario: Enabling/disabling 12 V auxiliary rails in embedded power management subsystems.

IC Role / Device Role / Timing Role: High-side PNP switch driven by MCU GPIO to control PMOS gate or relay coil.

Use Value: -45 V V_CEO rating provides 3× safety margin over 12 V rail, supporting robust fault tolerance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PN200A	TO-92 package; higher h_FE (240–600); 625 mW P_D; R_θJA = 200°C/W	Through-hole assembly; better thermal performance on large copper areas; less suitable for high-density SMT	Select PN200A when board real estate permits through-hole mounting and higher gain is required at low I_C
MMBT3906	SOT-23 package; V_CEO = -40 V; h_FE = 100–300; f_T = 250 MHz; Cob = 4.5 pF	Industry-standard PNP with tighter h_FE binning and broader distributor availability	Choose MMBT3906 for cross-compatible designs where standardized parametric consistency is prioritized over marginal V_CEO headroom

Compared with PN200A and MMBT3906, the MMBT200 offers intermediate voltage rating (-45 V), optimized SOT-23 thermal resistance for space-constrained layouts, and verified 250 MHz f_T - making it preferred for miniaturized analog signal chains requiring balanced gain, speed, and footprint.

Availability

MMBT200 is available at Aetrix Electronics and suitable for audio preamplifiers, level-shifting switches, current mirror references, and power supply enable controls requiring stable component supply and SMT-compatible packaging.

Supply support for MMBT200 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MMBT200 belongs to ON Semiconductor's general-purpose bipolar transistor product line, designed specifically for cost-sensitive, space-constrained analog and switching applications requiring reliable PNP functionality in SOT-23 format.

FAQ

What is the maximum collector-emitter voltage rating for the MMBT200?

The MMBT200 has a maximum collector-emitter voltage (V_CEO) rating of -45 V. This value is specified under test conditions of I_C = -1.0 mA and I_E = 0 at T_A = 25°C. Exceeding this rating risks irreversible breakdown. The MMBT200 must be operated within this limit in all circuit configurations, including transient conditions, to ensure long-term reliability.

Does the MMBT200 support high-frequency amplification?

Yes, the MMBT200 supports high-frequency amplification with a current gain–bandwidth product (f_T) of 250 MHz, measured at V_CE = -20 V and I_C = -20 mA. This makes the MMBT200 suitable for VHF preamplifier stages and RF-coupled signal conditioning. However, actual usable bandwidth depends on external biasing, layout parasitics, and load impedance - design validation at target frequency is recommended.

What is the thermal resistance of the MMBT200 in standard SMT layout?

The MMBT200 has a junction-to-ambient thermal resistance (R_θJA) of 357°C/W when mounted on a standard FR-4 PCB per ON Semiconductor's recommended land pattern. This value assumes a 1.6 inch × 1.6 inch × 0.06 inch board with minimum copper area. Derating begins above 25°C at 2.8 mW/°C, so ambient temperature and board copper mass directly impact safe operating current.

How does the MMBT200 compare to the MMBT3906 in switching applications?

The MMBT200 and MMBT3906 are both SOT-23 PNP transistors, but the MMBT200 offers -45 V V_CEO versus -40 V for the MMBT3906, giving it 5 V additional headroom in higher-voltage switching. Both exhibit similar V_CE(sat) and f_T, but the MMBT200's h_FE range extends to 350 at I_C = -150 mA, supporting more robust drive margin in high-current switch designs.

Is the MMBT200 suitable for low-noise audio signal amplification?

Yes, the MMBT200 is suitable for low-noise audio signal amplification, with a specified noise figure (NF) of 4.0 dB at I_C = -100 μA, V_CE = -5.0 V, R_G = 2.0 kΩ, and f = 1.0 kHz. Its low base spreading resistance and Process 68 fabrication contribute to this performance. For optimal noise performance, bias the MMBT200 near I_C = -100 μA and use proper shielding and grounding practices in the PCB layout.

MMBT200 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 45 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 20mA, 200mA

Current - Collector Cutoff (Max):: 50nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 150mA, 5V

Power - Max:: 350 mW

Frequency - Transition:: 250MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

MMBT200 FAQ

1.How can I place an order for MMBT200 through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT200 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT200 reliable?

The price and inventory of MMBT200 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT200 is usually 5 days.

3.What payment methods are accepted for MMBT200?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT200 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT200?

MMBT200 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT200 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT200?

For technical support, including MMBT200 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT200 requirements.

6.How does Aetrix verify that MMBT200 is sourced from the original manufacturer or authorized distributors?

All MMBT200 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT200 meets industry standards.

7.What is the process for return or replacement of MMBT200?

All MMBT200 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT200, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT200 part is unused and in its original packaging.

Return procedure for MMBT200:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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