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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MMBT2131T1G

Name: MMBT2131T1G
Brand: onsemi
SKU: MMBT2131T1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MMBT2131T1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: SC-74, SOT-457

Datasheet:: MMBT2131T1G.pdf

Description:: TRANS PNP 30V 0.7A SC-74

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MMBT2131T1G from onsemi is a PNP bipolar junction transistor rated for −30 V V_CEO, −700 mA I_C, and 342 mW power dissipation at T_C = 25°C, designed for general-purpose switching and amplification in low-voltage DC circuits such as power management blocks and signal conditioning stages.

For engineers reviewing the MMBT2131T1G datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, guaranteed h_FE ≥ 150 at I_C = 100 mA, V_CE(sat) ≤ 0.25 V at I_C = 500 mA/I_B = 50 mA, and SC-74 (SOT-23) package compatibility with high-density PCB layouts.

Technical Context

The MMBT2131T1G operates as a discrete PNP BJT with fixed current gain and saturation characteristics defined under DC bias conditions. Its electrical behavior follows standard Ebers-Moll model assumptions, with breakdown voltages specified at negative polarities per PNP convention and thermal derating curves validated for FR-4 PCB mounting configurations.

It supports linear amplification in Class-A configurations and hard-switching in saturated mode, with base-emitter forward voltage (V_BE(sat)) reaching 1.1 V at I_C = 700 mA/I_B = 70 mA and collector-emitter leakage (I_CBO) capped at 1.0 µA at 25°C and 10 µA at 125°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−30 V: Maximum reverse-biased collector-emitter voltage before avalanche breakdown; defines safe operating range in PNP switch applications.
I_C	−700 mA: Continuous collector current rating; sets upper limit for load-driving capability in DC power control circuits.
h_FE	≥150 at V_CE = −3.0 V, I_C = −100 mA: Minimum DC current gain; ensures predictable base drive requirements for reliable saturation.
V_CE(sat)	≤0.25 V at I_C = −500 mA, I_B = −50 mA: Low saturation voltage reduces conduction loss in high-efficiency switching designs.
P_D @ T_C = 25°C	342 mW: Maximum power dissipation on minimum FR-4 PCB; determines thermal margin without heatsinking.
R_JA	366 °C/W: Junction-to-ambient thermal resistance; used to calculate temperature rise under steady-state power loading.

Pinout & Package

MMBT2131T1G uses the SC-74 (SOT-23) surface-mount package with 6 terminals, where pins 1 and 4 are unconnected, pins 2 and 5 serve as collector, pin 3 is emitter, and pin 6 is base - enabling dual-collector configuration for parallel current handling or redundancy.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	No Connection	Electrically isolated; no internal bond wire; must remain floating or grounded per layout best practice.
Pin 2	Collector	Primary collector terminal; shares internal die connection with Pin 5 for enhanced current sharing capability.
Pin 3	Emiter	Emitter output node; referenced to system ground in typical PNP high-side switch topology.
Pin 4	No Connection	Electrically isolated; no internal bond wire; must remain floating or grounded per layout best practice.
Pin 5	Collector	Secondary collector terminal; internally tied to Pin 2; allows PCB routing flexibility or current splitting.
Pin 6	Base	Control input; requires negative base current relative to emitter to turn on device in PNP configuration.

Key Features

Feature	Design Value
Pb-Free & RoHS compliant	Meets EU Directive 2011/65/EU; eliminates lead-based solder compatibility concerns and supports eco-conscious manufacturing.
Dual collector terminals (Pins 2 & 5)	Enables current sharing across two PCB traces, reducing trace resistance and localized heating in high-current paths.
Guaranteed h_FE ≥ 150	Ensures consistent base drive sizing across production lots, minimizing need for design margin or binning.
V_CE(sat) ≤ 0.25 V @ rated current	Reduces power loss to ≤125 mW at I_C = −500 mA, improving efficiency in battery-powered or thermally constrained systems.

Applications

Automotive Door Lock Actuator Control	Industrial PLC Digital Output Stage
Use Scenario: Driving solenoid loads in 12 V automotive body control modules where space and thermal budget are constrained. IC Role / Device Role / Timing Role: PNP high-side switch controlling ground-return solenoid current path via emitter-follower configuration. Use Value: Dual-collector layout lowers effective on-resistance, reducing I²R heating during repeated actuation cycles.	Use Scenario: Switching 24 V DC industrial sensors and actuators in programmable logic controller output modules. IC Role / Device Role / Timing Role: Discrete PNP switch interfacing microcontroller GPIO to higher-power field devices. Use Value: Guaranteed h_FE ≥ 150 ensures stable base current calculation across temperature, simplifying driver circuit design.
Consumer Appliance Power Sequencing	Medical Diagnostic Equipment Bias Supply
Use Scenario: Enabling sequential power-up of subsystems in smart home appliances using low-voltage logic-controlled rail switching. IC Role / Device Role / Timing Role: General-purpose PNP transistor used in discrete voltage-level translation and enable gating. Use Value: −30 V V_CEO provides 2× safety margin over 12 V nominal rails, supporting transient robustness.	Use Scenario: Providing precision bias current to analog front-end op-amps and ADC reference buffers in portable diagnostic tools. IC Role / Device Role / Timing Role: Linear-mode current source configured with emitter degeneration resistor. Use Value: Tight V_BE(sat) spec (≤1.1 V) enables accurate current setting with minimal headroom penalty.

Automotive Door Lock Actuator Control

Industrial PLC Digital Output Stage

Use Scenario: Driving solenoid loads in 12 V automotive body control modules where space and thermal budget are constrained.

IC Role / Device Role / Timing Role: PNP high-side switch controlling ground-return solenoid current path via emitter-follower configuration.

Use Value: Dual-collector layout lowers effective on-resistance, reducing I²R heating during repeated actuation cycles.

Use Scenario: Switching 24 V DC industrial sensors and actuators in programmable logic controller output modules.

IC Role / Device Role / Timing Role: Discrete PNP switch interfacing microcontroller GPIO to higher-power field devices.

Use Value: Guaranteed h_FE ≥ 150 ensures stable base current calculation across temperature, simplifying driver circuit design.

Consumer Appliance Power Sequencing

Medical Diagnostic Equipment Bias Supply

Use Scenario: Enabling sequential power-up of subsystems in smart home appliances using low-voltage logic-controlled rail switching.

IC Role / Device Role / Timing Role: General-purpose PNP transistor used in discrete voltage-level translation and enable gating.

Use Value: −30 V V_CEO provides 2× safety margin over 12 V nominal rails, supporting transient robustness.

Use Scenario: Providing precision bias current to analog front-end op-amps and ADC reference buffers in portable diagnostic tools.

IC Role / Device Role / Timing Role: Linear-mode current source configured with emitter degeneration resistor.

Use Value: Tight V_BE(sat) spec (≤1.1 V) enables accurate current setting with minimal headroom penalty.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PN2907A	Lower I_C rating (−600 mA), same SC-74 package, h_FE min = 100 at I_C = −150 mA	Suitable for lower-current switching but lacks dual-collector configuration and tighter h_FE guarantee	Select when cost sensitivity outweighs need for 700 mA capacity or dual-collector layout flexibility
MMBT2907ALT1G	Identical pinout and package; h_FE min = 100 at I_C = −150 mA; V_CEO = −60 V; P_D = 350 mW	Better voltage margin but lower current gain consistency; not optimized for high-gain linear operation	Choose when higher breakdown voltage is critical and base drive margin can accommodate lower h_FE

Compared with PN2907A and MMBT2907ALT1G, the MMBT2131T1G delivers superior current-handling (−700 mA), higher guaranteed h_FE (≥150), and dual-collector architecture-making it optimal for compact, high-reliability PNP switching where thermal and gain stability are prioritized.

Availability

MMBT2131T1G is available at Aetrix Electronics and suitable for automotive door lock control, industrial PLC output stages, and consumer appliance power sequencing requiring stable component supply and long-term manufacturability.

Supply support for MMBT2131T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power and signal management solutions for automotive, industrial, cloud, and consumer markets.

The MMBT2131T1G belongs to onsemi's general-purpose bipolar transistor product line, engineered for cost-sensitive, high-volume applications demanding proven reliability, tight parametric consistency, and Pb-free compliance.

FAQ

What is the maximum collector-emitter voltage rating for MMBT2131T1G?

The MMBT2131T1G has a maximum collector-emitter voltage rating (V_CEO) of −30 V. This value is specified under DC conditions with I_C = −10 mA and represents the peak reverse-bias voltage the device can sustain before entering avalanche breakdown. Exceeding this rating risks permanent damage, especially under transient conditions without clamping protection.

Does MMBT2131T1G support high-frequency switching applications?

The MMBT2131T1G is not characterized for high-frequency switching; its datasheet omits transition frequency (f_T) and switching time parameters. It is optimized for DC and low-frequency (<100 kHz) applications such as power sequencing and relay driving. For RF or fast-switching use cases, engineers should select transistors explicitly rated for those conditions, not the MMBT2131T1G.

How many collector terminals does MMBT2131T1G have, and why?

The MMBT2131T1G has two collector terminals (Pins 2 and 5), both internally connected to the same die region. This dual-collector configuration allows current sharing across two PCB traces, reducing trace resistance, lowering localized heating, and improving thermal distribution-particularly beneficial in high-current DC switching applications where the MMBT2131T1G is deployed.

Is MMBT2131T1G compatible with lead-free reflow soldering processes?

Yes, the MMBT2131T1G is Pb-free and RoHS compliant, qualified for standard lead-free reflow profiles including JEDEC J-STD-020. Its SC-74 package withstands peak temperatures up to 260°C for 30 seconds. The device marking "MMBT2131T1G" includes "M" denoting Pb-free packaging, and onsemi provides full soldering guidelines in document SOLDERRM/D.

What is the guaranteed DC current gain (h_FE) of MMBT2131T1G under standard test conditions?

The MMBT2131T1G guarantees h_FE ≥ 150 when tested at V_CE = −3.0 V and I_C = −100 mA. This minimum value is assured across production lots and forms the basis for base drive design. Typical h_FE exceeds 200 under these conditions, but circuit designs must rely only on the guaranteed minimum to ensure robust operation across voltage, temperature, and process variation.

MMBT2131T1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: SC-74, SOT-457

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 700 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 70mA, 700mA

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 150 @ 100mA, 3V

Power - Max:: 342 mW

Frequency - Transition:: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-74

MMBT2131T1G FAQ

1.How can I place an order for MMBT2131T1G through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT2131T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT2131T1G reliable?

The price and inventory of MMBT2131T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT2131T1G is usually 5 days.

3.What payment methods are accepted for MMBT2131T1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT2131T1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT2131T1G?

MMBT2131T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT2131T1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT2131T1G?

For technical support, including MMBT2131T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT2131T1G requirements.

6.How does Aetrix verify that MMBT2131T1G is sourced from the original manufacturer or authorized distributors?

All MMBT2131T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT2131T1G meets industry standards.

7.What is the process for return or replacement of MMBT2131T1G?

All MMBT2131T1G units undergo pre-shipment inspection (PSI). If there is an issue with MMBT2131T1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT2131T1G part is unused and in its original packaging.

Return procedure for MMBT2131T1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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