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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Diodes Incorporated MMBT2222AQ-7-F

Name: MMBT2222AQ-7-F
Brand: Diodes Incorporated
SKU: MMBT2222AQ-7-F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MMBT2222AQ-7-F

Manufacturer:: Diodes Incorporated

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MMBT2222AQ-7-F.pdf

Description:: TRANS NPN 40V 0.6A SOT-23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MMBT2222AQ-7-F from Diodes Incorporated is a 40V, 600mA NPN small-signal transistor in SOT23 package, featuring V_CE(sat) < 300mV @ 150mA, h_FE = 35–300 (IC = 100µA to 500mA), and f_T = 300MHz - used for low-power switching and amplification in portable power management and signal conditioning circuits.

For engineers reviewing the MMBT2222AQ-7-F datasheet, MMBT2222AQ-7-F pinout, MMBT2222AQ-7-F application, or MMBT2222AQ-7-F equivalent, key selection criteria include saturation voltage at 150mA drive, DC current gain across temperature (−55°C to +150°C), thermal resistance (R_θJA = 403°C/W on minimal pad), ESD robustness (HBM 4kV), and automotive-grade qualification status.

Technical Context

This NPN bipolar junction transistor employs epitaxial planar die construction for stable gain and low V_CE(sat), supporting both linear amplification (with f_T = 300MHz at V_CE = 20V, I_C = 20mA) and fast switching (t_d = 10ns, t_r = 25ns, t_s = 225ns). Its complementary PNP counterpart is MMBT2907A.

Rated for operation from −55°C to +150°C with JEDEC-compliant HBM ESD rating of 4,000V, it meets automotive reliability requirements per separate qualified variant (MMBT2222AQ), and features green molding compound (UL 94V-0, halogen/antimony-free).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	40 V - Maximum safe collector-emitter voltage before breakdown under open-base condition.
I_C (continuous)	600 mA - Continuous collector current limit defining usable load-driving capability in switching designs.
V_CE(sat)	< 300 mV @ I_C = 150mA, I_B = 15mA - Ensures minimal conduction loss and heat generation in saturated switch applications.
h_FE	35–300 - Wide DC current gain range supports biasing flexibility across operating currents (100µA–500mA) and temperatures.
f_T	300 MHz - Enables RF amplification up to VHF band and high-speed digital signal switching.
R_θJA	403 °C/W - Thermal resistance on minimal PCB pad layout; dictates maximum power dissipation (310 mW) at ambient.
ESD HBM	4,000 V - Robust electrostatic discharge immunity reduces handling sensitivity during assembly and field operation.

Pinout & Package

Package: SOT23 - surface-mount, 3-pin plastic package with matte tin terminals, 0.008g weight, UL 94V-0 rated, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal	Reference node for base-emitter junction; connects to ground or low-side return path in common-emitter configurations.
2 (Base)	Control input	Receives current-limited drive to modulate collector current; requires external resistor for bias stability.
3 (Collector)	Current source terminal	Delivers switched or amplified output current to load; connected to supply rail in low-side switch topology.

Key Features

Feature	Design Value
Low V_CE(sat)	<300 mV at 150mA enables efficient battery-powered switching with <100mW conduction loss.
Automotive-qualified variant	MMBT2222AQ meets AEC-Q101 stress test requirements for under-hood and body-control modules.
Green packaging	Halogen- and antimony-free molding compound (<900ppm Br/Cl, <1000ppm Sb) satisfies RoHS 3 and environmental compliance mandates.
High f_T & low C_obo	300MHz transition frequency and 8pF output capacitance support clean signal integrity in 10–100MHz amplifier stages.

Applications

LED Driver Circuit

Microcontroller GPIO Expander

Use Scenario: Driving discrete indicator LEDs or low-current LED strings from 3.3V/5V logic outputs.

IC Role / Device Role / Timing Role: NPN switch controlling LED anode-to-V_CC path with emitter grounded; operates in saturation region.

Use Value: V_CE(sat) < 300mV ensures >90% LED forward voltage utilization and minimal self-heating at 20mA.

Use Scenario: Amplifying weak analog sensor signals (e.g., thermistor, photodiode) into MCU ADC input range.

IC Role / Device Role / Timing Role: Common-emitter amplifier stage with adjustable gain via R_C/R_E; biased using h_FE-stable network.

Use Value: h_FE = 100 @ I_C = 1mA provides predictable DC gain and noise figure ≤4.0dB at 1kHz.

Power Supply Enable Switch

Level-Shifting Interface

Use Scenario: Enabling/disabling auxiliary 5V or 3.3V rails in multi-rail embedded systems.

IC Role / Device Role / Timing Role: High-side or low-side pass transistor controlled by PMIC enable signal; handles up to 500mA load.

Use Value: I_C = 600mA rating and R_θJA = 403°C/W allow continuous operation without heatsink at 25°C ambient.

Use Scenario: Translating 1.8V logic outputs to 3.3V or 5V domains in mixed-voltage microcontroller systems.

IC Role / Device Role / Timing Role: Active pull-up switch with base driven by low-voltage GPIO; collector tied to higher rail.

Use Value: Fast switching (t_r/t_f ≤ 25/60ns) supports >10MHz level-shifted clock/data signals with minimal distortion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PN2222A (ON Semiconductor)	V_CEO = 40V, I_C = 800mA, V_CE(sat) = 0.3V @ 150mA - higher current rating but no automotive qualification.	Lacks AEC-Q101 certification; suitable for commercial-grade consumer electronics only.	Select when higher I_C margin is needed and automotive compliance is not required.
BC847BW (Nexperia)	h_FE = 200–450 @ I_C = 10mA, V_CE(sat) = 0.25V @ 100mA - tighter h_FE binning and lower saturation voltage at light loads.	Optimized for precision biasing in analog front-ends; less suited for 500mA switching.	Prefer for low-noise amplification where gain consistency outweighs high-current capability.

Compared with PN2222A and BC847BW, MMBT2222AQ-7-F delivers balanced performance across switching efficiency (low V_CE(sat)), wide h_FE range, and automotive qualification - making it optimal for industrial control and automotive body electronics where reliability and thermal robustness are critical.

Availability

MMBT2222AQ-7-F is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller GPIO expansion, and power supply enable switching requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for MMBT2222AQ-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for industrial, automotive, and computing markets.

The MMBT2222A product line delivers cost-effective, RoHS-compliant NPN transistors optimized for general-purpose amplification and switching in space-constrained, thermally demanding applications.

FAQ

What is the difference between MMBT2222A and MMBT2222AQ?

The "Q" suffix denotes automotive qualification per AEC-Q101 standards, including extended temperature operation (−55°C to +150°C), enhanced ESD robustness, and rigorous stress testing. MMBT2222A is commercial-grade; MMBT2222AQ is identical in electrical specs but certified for automotive use cases such as body control modules and lighting drivers.

Can MMBT2222AQ-7-F replace PN2222A in existing designs?

Yes, with verification of thermal margins and drive conditions: both share SOT23 package, pinout (E-B-C), and V_CEO/I_C ratings. However, MMBT2222AQ-7-F has lower max I_C (600mA vs. 800mA) and slightly higher V_CE(sat) at 500mA, so confirm saturation behavior under worst-case load and ambient temperature.

Is the SOT23 package lead-free and RoHS compliant?

Yes - MMBT2222AQ-7-F uses matte tin-plated terminals and halogen/antimony-free green molding compound, fully compliant with EU RoHS 2015/863/EU (RoHS 3), with <900ppm bromine/chlorine and <1000ppm antimony, verified per Diodes Incorporated's quality documentation.

What is the recommended PCB pad layout for thermal performance?

Use Diodes' suggested SOT23 pad layout: 2.0mm × 0.8mm solder pad (C), 1.35mm X-dimension, 0.9mm Y, and 2.9mm Y1 - with 1oz copper on FR-4. This achieves R_θJA = 403°C/W; increasing copper area to 15mm × 15mm lowers it to 357°C/W for higher-power operation.

MMBT2222AQ-7-F Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 40 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 50mA, 500mA

Current - Collector Cutoff (Max):: 10nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 150mA, 10V

Power - Max:: 310 mW

Frequency - Transition:: 300MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

MMBT2222AQ-7-F FAQ

1.How can I place an order for MMBT2222AQ-7-F through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT2222AQ-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT2222AQ-7-F reliable?

The price and inventory of MMBT2222AQ-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT2222AQ-7-F is usually 5 days.

3.What payment methods are accepted for MMBT2222AQ-7-F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT2222AQ-7-F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT2222AQ-7-F?

MMBT2222AQ-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT2222AQ-7-F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT2222AQ-7-F?

For technical support, including MMBT2222AQ-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT2222AQ-7-F requirements.

6.How does Aetrix verify that MMBT2222AQ-7-F is sourced from the original manufacturer or authorized distributors?

All MMBT2222AQ-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT2222AQ-7-F meets industry standards.

7.What is the process for return or replacement of MMBT2222AQ-7-F?

All MMBT2222AQ-7-F units undergo pre-shipment inspection (PSI). If there is an issue with MMBT2222AQ-7-F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT2222AQ-7-F part is unused and in its original packaging.

Return procedure for MMBT2222AQ-7-F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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