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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MMBT2222ATT1

Name: MMBT2222ATT1
Brand: onsemi
SKU: MMBT2222ATT1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MMBT2222ATT1

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: SC-75, SOT-416

Datasheet:: MMBT2222ATT1.pdf

Description:: TRANS NPN 40V 0.6A SC75 SOT416

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MMBT2222ATT1 from onsemi is an NPN silicon general-purpose transistor in SOT-416/SC-75 package, rated for 40 V_CEO, 600 mA_C, and 150 mW dissipation, with DC current gain (h_FE) of 35–100 at I_C = 150 mA, used in low-power switching and amplification circuits in automotive and industrial control modules.

For engineers reviewing the MMBT2222ATT1 datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO/I_C ratings, SOT-416 thermal performance, AEC-Q101 qualification, and h_FE consistency across temperature for reliable biasing in discrete amplifier stages and digital logic interface drivers.

Technical Context

This NPN bipolar junction transistor operates in active, saturation, and cutoff regions with verified switching times: t_d ≤ 10 ns, t_r ≤ 25 ns, t_s ≤ 225 ns, and t_f ≤ 60 ns under specified test conditions. Its f_T = 300 MHz supports RF pre-amplifier use up to VHF band when biased appropriately.

Thermal resistance R_JA = 833°C/W reflects FR4 PCB mounting with minimum footprint; junction temperature range −55°C to +150°C enables operation in under-hood automotive environments. Input impedance h_ie = 0.25–1.25 kΩ and noise figure NF ≤ 4.0 dB at 1 kHz support low-noise small-signal amplification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	40 V - Maximum collector-emitter voltage before breakdown; defines safe operating voltage headroom in 24 V automotive supply rails.
I_C (max)	600 mA - Continuous collector current limit; supports driving relays, LEDs, or logic-level MOSFET gates without external heat sinking.
P_D	150 mW - Total device dissipation at T_A = 25°C; requires thermal derating above 25°C ambient per R_JA = 833°C/W.
h_FE	35–100 - DC current gain range at I_C = 150 mA, V_CE = 10 V; enables predictable base drive calculation for saturated switch design.
f_T	300 MHz - Current-gain bandwidth product at I_C = 20 mA, V_CE = 20 V; validates suitability for VHF pre-amplifier and oscillator buffer stages.
V_CE(sat)	0.3–1.0 V - Collector-emitter saturation voltage at I_C/I_B = 10; determines power loss and voltage drop in low-side switching applications.
AEC-Q101	Qualified - Meets stress test requirements for automotive electronics; supports PPAP documentation for Tier 1 OEM programs.

Pinout & Package

SOT-416/SC-75 three-terminal surface-mount package (1.60 × 0.80 × 0.80 mm, 1.00 mm pitch), optimized for high-density PCB layouts and automated assembly. Thermal performance validated on FR4 with minimum recommended footprint.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Current-controlled input terminal; requires series resistor to limit I_B and ensure saturation at target I_C.
2	Emitter	Common reference node for NPN configuration; connected to ground or low-side return path in switch designs.
3	Collector	Output current terminal; handles switched load current up to 600 mA with V_CE ≤ 40 V.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive under-hood applications including engine control, body electronics, and lighting modules.
Pb-free, Halogen-free/BFR-free	Complies with RoHS Directive 2011/65/EU and JESD204B material restrictions for green manufacturing.
V_CEO = 40 V, I_C = 600 mA	Enables direct replacement of legacy TO-92 transistors in space-constrained SMT designs without sacrificing voltage/current margin.
f_T = 300 MHz	Supports stable small-signal amplification up to 100 MHz with adequate gain margin for broadband sensor signal conditioning.
R_JA = 833°C/W	Allows thermal modeling on standard FR4 boards; derates to ~90 mW at 85°C ambient, sufficient for intermittent duty-cycle loads.

Applications

Automotive Body Control Module	Industrial PLC Digital Input Interface
Use Scenario: Level-shifting and isolation of 12 V/24 V sensor signals into 3.3 V/5 V microcontroller GPIO inputs. IC Role / Device Role / Timing Role: NPN switch configured as active-low inverter with pull-up resistor; provides galvanic decoupling and voltage translation. Use Value: Leverages V_CEO = 40 V rating and AEC-Q101 qualification to withstand load-dump transients while maintaining <1 µs response time for fast edge detection.	Use Scenario: Driving optocoupler LEDs in isolated digital input channels of programmable logic controllers. IC Role / Device Role / Timing Role: Low-side current sink for 10–20 mA LED current; operates in saturation with V_CE(sat) ≤ 0.3 V to minimize power loss. Use Value: Delivers consistent h_FE ≥ 75 at I_C = 15 mA ensures reliable turn-on across temperature, reducing need for base current trimming.
Consumer Appliance Motor Driver Stage	Medical Diagnostic Instrument Signal Amplifier
Use Scenario: Controlling small DC brush motors (<5 W) in smart home appliances via PWM from MCU output pins. IC Role / Device Role / Timing Role: Low-side PWM switch with flyback diode protection; handles 300–500 mA peak motor current during stall conditions. Use Value: 600 mA I_C rating and 150 mW P_D allow short-duration stall tolerance without thermal shutdown; t_f ≤ 60 ns minimizes shoot-through risk in half-bridge variants.	Use Scenario: First-stage pre-amplification of low-level biopotential signals (ECG, EEG) before ADC sampling. IC Role / Device Role / Timing Role: Common-emitter amplifier with emitter degeneration resistor; biased for low-noise operation at I_C = 100 µA–1 mA. Use Value: NF ≤ 4.0 dB at 1 kHz and h_fe = 75–375 enable >60 dB open-loop gain with minimal added noise, preserving signal integrity in analog front-end chains.

Automotive Body Control Module

Industrial PLC Digital Input Interface

Use Scenario: Level-shifting and isolation of 12 V/24 V sensor signals into 3.3 V/5 V microcontroller GPIO inputs.

IC Role / Device Role / Timing Role: NPN switch configured as active-low inverter with pull-up resistor; provides galvanic decoupling and voltage translation.

Use Value: Leverages V_CEO = 40 V rating and AEC-Q101 qualification to withstand load-dump transients while maintaining <1 µs response time for fast edge detection.

Use Scenario: Driving optocoupler LEDs in isolated digital input channels of programmable logic controllers.

IC Role / Device Role / Timing Role: Low-side current sink for 10–20 mA LED current; operates in saturation with V_CE(sat) ≤ 0.3 V to minimize power loss.

Use Value: Delivers consistent h_FE ≥ 75 at I_C = 15 mA ensures reliable turn-on across temperature, reducing need for base current trimming.

Consumer Appliance Motor Driver Stage

Medical Diagnostic Instrument Signal Amplifier

Use Scenario: Controlling small DC brush motors (<5 W) in smart home appliances via PWM from MCU output pins.

IC Role / Device Role / Timing Role: Low-side PWM switch with flyback diode protection; handles 300–500 mA peak motor current during stall conditions.

Use Value: 600 mA I_C rating and 150 mW P_D allow short-duration stall tolerance without thermal shutdown; t_f ≤ 60 ns minimizes shoot-through risk in half-bridge variants.

Use Scenario: First-stage pre-amplification of low-level biopotential signals (ECG, EEG) before ADC sampling.

IC Role / Device Role / Timing Role: Common-emitter amplifier with emitter degeneration resistor; biased for low-noise operation at I_C = 100 µA–1 mA.

Use Value: NF ≤ 4.0 dB at 1 kHz and h_fe = 75–375 enable >60 dB open-loop gain with minimal added noise, preserving signal integrity in analog front-end chains.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC846B,215	Higher h_FE (200–450), lower V_CEO (65 V), same SOT-23 package but larger footprint than SOT-416.	Preferred where higher gain stability is needed at low I_C; less suitable for ultra-high-density layouts due to larger package size.	Select BC846B,215 when gain linearity at I_C < 10 mA is critical and board space permits SOT-23.
PN2222A-RTK/P	TO-92 through-hole package, identical electrical specs but no AEC-Q101 qualification or Pb-free marking.	Used in prototyping, educational kits, or non-automotive production where RoHS compliance and automotive reliability are not required.	Choose PN2222A-RTK/P only for cost-sensitive, non-automotive, through-hole assembly; not suitable for AEC-Q101 or SMT volume production.

Compared with BC846B,215 and PN2222A-RTK/P, the MMBT2222ATT1 uniquely combines AEC-Q101 qualification, SOT-416 miniaturization, and verified 40 V/600 mA capability-making it the preferred choice for automotive-grade, space-constrained switching and amplification where reliability and manufacturability are jointly prioritized.

Availability

MMBT2222ATT1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial PLC interfaces, and consumer appliance motor control requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for MMBT2222ATT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The MMBT2222ATT1 belongs to onsemi's general-purpose bipolar transistor product line, engineered for robust, low-cost switching and amplification in space-constrained, thermally demanding environments-including under-hood automotive systems.

FAQ

What is the maximum continuous collector current rating for MMBT2222ATT1?

The MMBT2222ATT1 has a maximum continuous collector current (I_C) rating of 600 mA at T_A = 25°C. This rating assumes operation within the SOA limits defined in the datasheet and requires appropriate thermal derating above ambient temperatures-e.g., ~90 mA at 125°C ambient based on R_JA = 833°C/W. The MMBT2222ATT1 must not be operated beyond its Safe Operating Area curve, especially under pulsed or high-V_CE conditions.

Is MMBT2222ATT1 qualified for automotive applications?

Yes, the MMBT2222ATT1 is AEC-Q101 qualified and PPAP capable, as confirmed by the NSV prefix in the ordering part number NSVMMBT2222ATT1G. This qualification covers stress testing for temperature cycling, humidity, mechanical shock, and ESD-ensuring reliability in automotive body control, lighting, and infotainment systems. The MMBT2222ATT1 meets all requirements for Grade 2 (−40°C to +105°C) and extended temperature operation up to +150°C junction.

What is the typical DC current gain (h_FE) of MMBT2222ATT1 at 150 mA collector current?

At I_C = 150 mA, V_CE = 10 V, and T_A = 25°C, the MMBT2222ATT1 exhibits a DC current gain (h_FE) ranging from 35 to 100, per the datasheet's "ON CHARACTERISTICS" table. This spread reflects process variation; design margins should accommodate the minimum value (35) for guaranteed saturation in switching applications. The MMBT2222ATT1 maintains usable h_FE down to −55°C and up to 125°C, though gain decreases at temperature extremes.

Does MMBT2222ATT1 have RoHS and halogen-free compliance?

Yes, the MMBT2222ATT1 is Pb-free, halogen-free/BFR-free, and fully RoHS compliant per EU Directive 2011/65/EU, as explicitly stated in the "Features" section of the official datasheet. The "G" suffix in MMBT2222ATT1G denotes Pb-free packaging, and the NSV prefix confirms conformance to automotive material content standards. The MMBT2222ATT1 meets JEDEC JS709C and IPC-1752A requirements for hazardous substance declarations.

What is the thermal resistance (R_JA) of MMBT2222ATT1 and how is it measured?

The MMBT2222ATT1 has a thermal resistance from junction-to-ambient (R_JA) of 833°C/W, measured on a standard FR4 printed circuit board using the minimum recommended footprint per the datasheet's Note 1. This value assumes no copper pour or thermal vias; adding 1 cm² of 2-oz copper on the collector pad reduces R_JA by ~200°C/W. The MMBT2222ATT1's R_JA directly determines allowable power dissipation at elevated ambient temperatures-e.g., 90 mW at 85°C ambient.

MMBT2222ATT1 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: SC-75, SOT-416

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 40 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 50mA, 500mA

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 150mA, 10V

Power - Max:: 150 mW

Frequency - Transition:: 300MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SC-75, SOT-416

MMBT2222ATT1 FAQ

1.How can I place an order for MMBT2222ATT1 through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT2222ATT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT2222ATT1 reliable?

The price and inventory of MMBT2222ATT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT2222ATT1 is usually 5 days.

3.What payment methods are accepted for MMBT2222ATT1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT2222ATT1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT2222ATT1?

MMBT2222ATT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT2222ATT1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT2222ATT1?

For technical support, including MMBT2222ATT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT2222ATT1 requirements.

6.How does Aetrix verify that MMBT2222ATT1 is sourced from the original manufacturer or authorized distributors?

All MMBT2222ATT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT2222ATT1 meets industry standards.

7.What is the process for return or replacement of MMBT2222ATT1?

All MMBT2222ATT1 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT2222ATT1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT2222ATT1 part is unused and in its original packaging.

Return procedure for MMBT2222ATT1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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