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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MMBT2222LT1

Name: MMBT2222LT1
Brand: onsemi
SKU: MMBT2222LT1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MMBT2222LT1

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: -

Datasheet:: MMBT2222LT1.pdf

Description:: TRANS NPN 30V 600MA SOT23

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MMBT2222LT1 from onsemi is an NPN silicon general-purpose transistor in SOT-23 package, rated for 30 V_CEO, 600 mA continuous collector current, and 225 mW power dissipation on FR-5 board. It delivers DC current gain (h_FE) of 35–300 at I_C = 0.1–150 mA, with V_CE(sat) ≤ 0.4 V at I_C = 150 mA / I_B = 15 mA, and is widely used in low-voltage switching and amplification circuits such as LED drivers and signal buffering.

For engineers reviewing the MMBT2222LT1 datasheet, pinout, applications, or equivalent options, this page provides verified electrical parameters, SOT-23 terminal mapping, real-world use cases in industrial control and consumer electronics, and two validated alternative transistors with documented functional trade-offs.

Technical Context

The MMBT2222LT1 operates as a discrete bipolar junction transistor with fixed NPN polarity and no integrated biasing or protection circuitry. Its DC current gain varies significantly with collector current - 35 min at 0.1 mA, 75 min at 10 mA, and 30–50 min at 150 mA - indicating strong current-dependent amplification behavior. The device exhibits f_T = 250 MHz at I_C = 20 mA, supporting RF-capable small-signal amplification up to UHF frequencies.

Thermal performance is defined by R_JA = 556 °C/W on FR-5 board and 417 °C/W on alumina substrate, requiring careful PCB layout for sustained >200 mA operation. Switching characteristics are specified only for the MMBT2222A variant; the MMBT2222LT1 shares identical structure but lacks published t_d/t_r/t_s/t_f values in its datasheet revision.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	30 V - Maximum safe collector-emitter voltage before breakdown; sets upper rail limit in 24 V logic-level switching.
I_C Continuous	600 mA - Sustained current-handling capability; supports driving medium-power loads like relays or multiple LEDs.
P_D (FR-5)	225 mW - Power dissipation limit at 25°C ambient; derates 1.8 mW/°C above ambient, constraining thermal design.
h_FE (I_C = 10 mA)	75 min - Minimum DC current gain at mid-range bias; ensures reliable saturation with ~133 µA base drive for 10 mA collector load.
V_CE(sat)	≤ 0.4 V at I_C = 150 mA / I_B = 15 mA - Low saturation voltage reduces conduction loss and self-heating in switch-mode operation.
f_T	250 MHz - Unity-gain bandwidth; enables stable small-signal amplification up to ~100 MHz with adequate gain margin.
C_obo	≤ 8.0 pF - Output capacitance at 10 V reverse bias; limits high-frequency response and affects stability in RF amplifier stages.

Pinout & Package

SOT-23 (TO-236) surface-mount package, 2.90 × 1.30 × 1.00 mm body size, 1.90 mm lead pitch. RoHS-compliant, Pb-free construction.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Current-controlled input node; requires series resistor to limit I_B and prevent thermal runaway during saturation.
2	Emitter	Common reference terminal; tied to ground or low-side return path; carries full load current in common-emitter configuration.
3	Collector	Output current sink node; connects to load and positive supply; voltage swing limited by V_CEO = 30 V rating.

Key Features

Feature	Design Value
RoHS-compliant, Pb-free, halogen-free	Meets global environmental regulations without compromising solderability or reliability in reflow assembly.
Low V_CE(sat) at medium current	0.4 V max at 150 mA enables <100 mW conduction loss per transistor, reducing thermal stress in dense PCB layouts.
High f_T for general-purpose BJT	250 MHz allows use in IF amplifiers, oscillator buffers, and fast-switching applications beyond basic digital logic interfacing.
Wide h_FE range across operating currents	35–300 span supports both low-current sensing (µA bias) and higher-current switching (150 mA), easing design reuse.
Specified C_ibo and C_obo	25–30 pF input and ≤8 pF output capacitance enable predictable impedance matching and stability analysis in RF designs.

Applications

LED Driver Circuit	Microcontroller GPIO Expander
Use Scenario: Driving 20 mA white LEDs from 3.3 V or 5 V microcontroller outputs. IC Role / Device Role / Timing Role: Discrete NPN switch controlling LED anode current path to ground; acts as level-shifting current sink. Use Value: V_CE(sat) ≤ 0.4 V ensures >2.9 V forward voltage remains across LED at 20 mA, maintaining brightness and efficiency.	Use Scenario: Amplifying weak analog sensor signals (e.g., thermistor divider) into ADC-input range. IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier with fixed bias network; provides 20–50× voltage gain at audio/DC frequencies. Use Value: h_FE ≥ 75 at 10 mA enables stable gain with minimal base current loading on high-impedance sources.
Industrial Relay Interface	Consumer Audio Preamp Stage
Use Scenario: Isolating and driving 12 V/24 V relay coils from low-voltage logic controllers. IC Role / Device Role / Timing Role: High-side or low-side switch interfacing PLC output to inductive load; handles flyback energy via external diode. Use Value: 30 V V_CEO and 600 mA I_C support direct coil drive up to 720 mW, eliminating need for driver ICs in cost-sensitive systems.	Use Scenario: Boosting microphone-level signals (−60 dBV) to line-level (−10 dBV) in portable speakers or voice recorders. IC Role / Device Role / Timing Role: Single-stage Class-A amplifier with emitter degeneration; operates at 1–5 mA quiescent current for low noise. Use Value: NF ≤ 4.0 dB at 100 µA and 1 kHz ensures clean signal amplification without introducing audible hiss in battery-powered devices.

LED Driver Circuit

Microcontroller GPIO Expander

Use Scenario: Driving 20 mA white LEDs from 3.3 V or 5 V microcontroller outputs.

IC Role / Device Role / Timing Role: Discrete NPN switch controlling LED anode current path to ground; acts as level-shifting current sink.

Use Value: V_CE(sat) ≤ 0.4 V ensures >2.9 V forward voltage remains across LED at 20 mA, maintaining brightness and efficiency.

Use Scenario: Amplifying weak analog sensor signals (e.g., thermistor divider) into ADC-input range.

IC Role / Device Role / Timing Role: Common-emitter small-signal amplifier with fixed bias network; provides 20–50× voltage gain at audio/DC frequencies.

Use Value: h_FE ≥ 75 at 10 mA enables stable gain with minimal base current loading on high-impedance sources.

Industrial Relay Interface

Consumer Audio Preamp Stage

Use Scenario: Isolating and driving 12 V/24 V relay coils from low-voltage logic controllers.

IC Role / Device Role / Timing Role: High-side or low-side switch interfacing PLC output to inductive load; handles flyback energy via external diode.

Use Value: 30 V V_CEO and 600 mA I_C support direct coil drive up to 720 mW, eliminating need for driver ICs in cost-sensitive systems.

Use Scenario: Boosting microphone-level signals (−60 dBV) to line-level (−10 dBV) in portable speakers or voice recorders.

IC Role / Device Role / Timing Role: Single-stage Class-A amplifier with emitter degeneration; operates at 1–5 mA quiescent current for low noise.

Use Value: NF ≤ 4.0 dB at 100 µA and 1 kHz ensures clean signal amplification without introducing audible hiss in battery-powered devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PN2222A (ON Semiconductor)	TO-92 through-hole package; same V_CEO = 40 V, higher h_FE (100 min at 150 mA), but larger footprint and lower f_T (250 MHz vs. MMBT2222LT1's 250 MHz - identical).	Preferred for prototyping or legacy through-hole boards; unsuitable for space-constrained SMT designs.	Select PN2222A when manual assembly, breadboarding, or thermal mass requirements favor leaded packages.
BC817-40 (Nexperia)	SOT-23 package; V_CEO = 45 V, I_C = 500 mA, h_FE = 250–630 at 100 mA; tighter h_FE distribution but higher V_CE(sat) (0.7 V typical at 500 mA).	Better suited for higher-voltage industrial sensors; less optimal for low-loss 3.3 V LED switching due to higher saturation loss.	Choose BC817-40 when system voltage exceeds 30 V or tighter h_FE binning is required for production consistency.

Compared with PN2222A and BC817-40, the MMBT2222LT1 offers the best balance of SMT compatibility, low V_CE(sat), and proven reliability in high-volume consumer electronics - making it ideal for cost-sensitive, space-limited 3–24 V switching where moderate gain and UHF capability are needed.

Availability

MMBT2222LT1 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller interface expansion, and industrial relay control requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for MMBT2222LT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The MMBT2222LT1 belongs to onsemi's general-purpose bipolar transistor product line, designed specifically for cost-effective, high-reliability discrete switching and amplification in consumer, computing, and industrial end equipment.

FAQ

What is the maximum collector-emitter voltage rating for the MMBT2222LT1?

The MMBT2222LT1 has a maximum collector-emitter voltage (V_CEO) rating of 30 V DC. This value is confirmed in the "Maximum Ratings" table of the official onsemi datasheet (Rev. 12, August 2021) and defines the absolute upper limit for safe operation in common-emitter configurations. Exceeding 30 V risks avalanche breakdown and permanent device failure, especially under transient conditions.

Does the MMBT2222LT1 support automotive-grade qualification?

No, the MMBT2222LT1 is not AEC-Q101 qualified. Only the SMMBT2222AL and MMBT2222AL variants carry the "S" prefix and are explicitly listed as AEC-Q101 qualified and PPAP capable in the onsemi datasheet. The MMBT2222LT1 is intended for commercial and industrial applications where extended temperature range (−55°C to +150°C) and robustness are required, but formal automotive certification is not mandated.

What is the typical DC current gain (h_FE) of the MMBT2222LT1 at 10 mA collector current?

The MMBT2222LT1 specifies a minimum DC current gain (h_FE) of 75 at I_C = 10 mA and V_CE = 10 V, per the "ELECTRICAL CHARACTERISTICS" table in the onsemi datasheet. Typical values observed in production lots range from 100 to 200, but design must be based on the guaranteed 75 minimum to ensure functionality across process and temperature variations.

Can the MMBT2222LT1 be used in RF amplifier applications?

Yes, the MMBT2222LT1 supports RF amplifier use up to approximately 100 MHz due to its 250 MHz current-gain bandwidth product (f_T). The datasheet confirms f_T = 250 MHz at I_C = 20 mA and V_CE = 20 V, and small-signal parameters including C_ibo (≤30 pF) and C_obo (≤8 pF) are fully characterized - enabling stable gain and impedance matching in VHF front-end and IF stages.

What is the thermal resistance (R_JA) of the MMBT2222LT1 on standard FR-5 PCB?

The MMBT2222LT1 has a thermal resistance from junction-to-ambient (R_JA) of 556 °C/W when mounted on a standard FR-5 board (1.0 × 0.75 × 0.062 in.) at T_A = 25°C, as stated in the "THERMAL CHARACTERISTICS" section. This value assumes minimal copper pour; adding thermal vias and 1-in² copper pad can reduce effective R_JA by ~30%, critical for sustained operation above 200 mA.

MMBT2222LT1 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: *

Package/Case:: -

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

Transistor Type:: -

Current - Collector (Ic) (Max):: -

Voltage - Collector Emitter Breakdown (Max):: -

Vce Saturation (Max) @ Ib, Ic:: -

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: -

Power - Max:: -

Frequency - Transition:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

MMBT2222LT1 FAQ

1.How can I place an order for MMBT2222LT1 through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT2222LT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT2222LT1 reliable?

The price and inventory of MMBT2222LT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT2222LT1 is usually 5 days.

3.What payment methods are accepted for MMBT2222LT1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT2222LT1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT2222LT1?

MMBT2222LT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT2222LT1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT2222LT1?

For technical support, including MMBT2222LT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT2222LT1 requirements.

6.How does Aetrix verify that MMBT2222LT1 is sourced from the original manufacturer or authorized distributors?

All MMBT2222LT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT2222LT1 meets industry standards.

7.What is the process for return or replacement of MMBT2222LT1?

All MMBT2222LT1 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT2222LT1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT2222LT1 part is unused and in its original packaging.

Return procedure for MMBT2222LT1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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