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onsemi MMBT2222LT3
- Part No.:
- MMBT2222LT3
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
MMBT2222LT3.pdf
- Description:
- TRANS NPN 30V 0.6A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,599
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Product details
Overview
MMBT2222LT3 from onsemi is an NPN silicon general-purpose transistor in SOT-23 package, rated for 30 VCEO, 600 mA continuous collector current, and 225 mW power dissipation on FR-5 board. It delivers DC current gain (hFE) of 35–300 at IC = 0.1–150 mA, with VCE(sat) ≤ 0.4 V at IC = 150 mA / IB = 15 mA, and is widely used in low-voltage switching and amplification circuits in consumer and industrial control modules.
For engineers reviewing the MMBT2222LT3 datasheet, pinout, applications, or equivalent options, key selection criteria include its SOT-23 footprint compatibility, guaranteed hFE range across operating currents, VCE(sat) performance at drive levels up to 15 mA base current, and thermal derating behavior on standard PCB substrates.
Technical Context
The MMBT2222LT3 implements a planar epitaxial NPN structure optimized for medium-speed switching and linear amplification. Its junction temperature range spans −55°C to +150°C, and it features a 556°C/W thermal resistance (RJA) on FR-5 board, enabling stable operation in compact, unheatsinked layouts.
Electrical behavior is characterized by three distinct hFE test conditions (IC = 0.1 mA, 1 mA, and 10 mA), supporting both low-current biasing and higher-drive switching. Small-signal parameters include fT = 250 MHz, Cobo ≤ 8.0 pF, and Cibo ≤ 30 pF - confirming suitability for audio-frequency and low-MHz signal handling without parasitic resonance concerns.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 30 V - Maximum safe collector-emitter voltage before breakdown under open-base condition; defines upper rail limit in 24 V logic-level switch designs. |
| IC Continuous | 600 mA - Sustained collector current capability; supports relay drivers, LED arrays, and small solenoid loads without forced cooling. |
| hFE Range | 35 to 300 - Confirmed DC current gain spread across IC = 0.1–150 mA; enables robust bias design across production lots and temperature extremes. |
| VCE(sat) | ≤ 0.4 V at IC = 150 mA / IB = 15 mA - Low saturation voltage minimizes conduction loss and self-heating in high-duty-cycle switching applications. |
| fT | 250 MHz - Current-gain bandwidth product measured at IC = 20 mA / VCE = 20 V; validates usable gain up to mid-VHF for RF preamp or oscillator buffer roles. |
| PD (FR-5) | 225 mW at TA = 25°C - Absolute power dissipation limit on standard epoxy-fiberglass board; derates linearly at 1.8 mW/°C above ambient. |
Pinout & Package
SOT-23 (TO-236) surface-mount package, 2.90 mm × 1.30 mm × 1.00 mm body, 1.90 mm lead pitch. RoHS-compliant, Pb-free construction per onsemi specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal accepting forward-biased current to initiate conduction; requires ≥0.65 VBE to turn on, with typical VBE(sat) = 0.8–1.3 V depending on drive level. |
| 2 | Emitter | Current return path tied to circuit common; internally connected to substrate; must be referenced to lowest potential node in NPN switch configuration. |
| 3 | Collector | Output terminal sourcing current to load; withstands up to 30 V reverse bias when off; connects to positive supply or active load in common-emitter topology. |
Key Features
| Feature | Design Value |
|---|---|
| RoHS-compliant, Pb-free, halogen-free | Meets global environmental regulations without compromising solderability or long-term reliability in reflow assembly. |
| −55°C to +150°C operating range | Validated junction temperature tolerance supports deployment in automotive engine bays, industrial motor controls, and outdoor electronics enclosures. |
| Low VCE(sat) at IC = 150 mA | Ensures <150 mW conduction loss at full-rated current, reducing thermal stress and enabling smaller PCB copper areas. |
| High fT = 250 MHz | Enables stable small-signal amplification up to ~100 MHz with predictable gain roll-off, suitable for IF stages and pulse shaping. |
| Guaranteed hFE min/max across IC range | Eliminates need for binning or external gain compensation in production designs using fixed-base-resistor bias networks. |
Applications
| LED Driver Circuit | Microcontroller GPIO Expander |
|---|---|
|
Use Scenario: Driving 20 mA white LEDs from 3.3 V or 5 V microcontroller outputs via single-transistor switch. IC Role / Device Role: NPN low-side switch translating logic-level signals into higher-current LED paths. Use Value: VCE(sat) ≤ 0.4 V ensures >95% efficiency at 20 mA, while hFE ≥ 75 guarantees reliable saturation with 250 µA base drive from MCU pins. |
Use Scenario: Extending digital output capability of resource-constrained MCUs (e.g., PIC10F, STM32G0) to drive relays, buzzers, or indicator lamps. IC Role / Device Role: General-purpose interface transistor buffering weak GPIOs to handle 100–500 mA loads. Use Value: 600 mA IC rating and 225 mW PD allow direct drive of 5 V/100 mA relays without heatsinking or additional driver ICs. |
| Audio Pre-amplifier Stage | Power Supply Enable Switch |
|
Use Scenario: Low-noise voltage amplifier for electret microphone signals in battery-powered voice recorders or IoT sensors. IC Role / Device Role: Common-emitter small-signal amplifier with emitter degeneration for linearity and gain stability. Use Value: NF ≤ 4.0 dB at IC = 100 µA and f = 1 kHz, combined with hfe ≥ 300 at 1 mA, supports high-SNR analog front-end design. |
Use Scenario: Enabling/disabling 12 V auxiliary rails in embedded systems using 3.3 V logic-controlled power sequencing. IC Role / Device Role: High-side or low-side enable switch controlling PMOS/NMOS pass transistors or LDO enable inputs. Use Value: VCEO = 30 V safely accommodates 12 V rail transients and overshoots; fast switching (td/tr < 10/25 ns) prevents brownout during power-up. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PN2222A (ON Semiconductor) | TO-92 through-hole package; identical electrical specs (VCEO = 40 V, hFE = 100–300), but larger footprint and lower thermal resistance (RJA ≈ 200°C/W). | Preferred where manual prototyping, breadboarding, or legacy through-hole assembly is required; unsuitable for space-constrained SMT designs. | Select PN2222A only if SOT-23 footprint is unavailable or thermal margin exceeds 556°C/W requirement. |
| BC846B (Nexperia) | SOT-23 package; VCEO = 65 V, hFE = 200–450 at IC = 10 mA, but VCE(sat) = 0.5 V (min) at same IC/IB; fT = 250 MHz. | Better voltage headroom and gain consistency, but slightly higher saturation loss; suited for 5–24 V logic-level switching where VCE(sat) < 0.4 V is not critical. | Choose BC846B when higher VCEO or tighter hFE distribution is prioritized over minimal conduction loss at 150 mA. |
Compared with PN2222A and BC846B, the MMBT2222LT3 uniquely balances SOT-23 miniaturization, 30 V operational safety margin, sub-0.4 V saturation, and production-proven hFE spread - making it optimal for cost-sensitive, high-volume SMT designs requiring predictable turn-on and thermal behavior on standard FR-5 boards.
Availability
MMBT2222LT3 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller I/O expansion, audio pre-amplifiers, and power supply enable switches requiring stable component supply, consistent parametric performance, and RoHS-compliant manufacturing.
Supply support for MMBT2222LT3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, medical, and IoT applications.
The MMBT2222LT3 belongs to onsemi's general-purpose bipolar transistor product line, designed specifically for cost-effective, high-reliability discrete switching and amplification in space-constrained SMT applications across consumer, industrial, and computing markets.
FAQ
What is the maximum collector-emitter voltage rating for MMBT2222LT3?
The MMBT2222LT3 has a maximum collector-emitter voltage (VCEO) rating of 30 Vdc, specified under open-base conditions with IC = 10 mA. This rating applies across the full operating temperature range (−55°C to +150°C) and defines the absolute upper limit for safe DC voltage swing between collector and emitter terminals in the MMBT2222LT3.
Does MMBT2222LT3 support automotive-grade qualification?
No, the MMBT2222LT3 is not AEC-Q101 qualified. The automotive-grade variant is the SMMBT2222ALT3G (with "S" prefix), which carries AEC-Q101 qualification and PPAP capability. The MMBT2222LT3 is intended for industrial, consumer, and commercial applications where extended temperature operation (−55°C to +150°C) is required but formal automotive certification is not mandated.
What is the typical DC current gain (hFE) of MMBT2222LT3 at 10 mA collector current?
At IC = 10 mA and VCE = 10 V, the MMBT2222LT3 exhibits a minimum hFE of 75 and a maximum of 300, per the official onsemi datasheet. This wide but guaranteed spread allows robust bias network design without lot-to-lot gain calibration, especially in fixed-resistor base-drive configurations.
Can MMBT2222LT3 be used in switching applications above 100 kHz?
Yes - the MMBT2222LT3 has a current-gain bandwidth product (fT) of 250 MHz and documented switching times (td ≤ 10 ns, tr ≤ 25 ns), confirming reliable operation well above 100 kHz. However, actual usable frequency depends on load impedance, drive strength, and layout parasitics; for >1 MHz switching, verify SOA compliance using the Safe Operating Area curve in the MMBT2222LT3 datasheet.
What is the thermal resistance (RJA) of MMBT2222LT3 on FR-5 board?
The MMBT2222LT3 has a thermal resistance from junction-to-ambient (RJA) of 556°C/W when mounted on a standard FR-5 PCB (1.0 × 0.75 × 0.062 in.) at TA = 25°C. This value decreases linearly by 1.8 mW/°C above 25°C ambient, meaning the device dissipates 225 mW at 25°C but only ~180 mW at 50°C ambient - a critical parameter for thermal margin analysis in the MMBT2222LT3.
MMBT2222LT3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 600 mA
- Voltage - Collector Emitter Breakdown (Max):
- 30 V
- Vce Saturation (Max) @ Ib, Ic:
- 1.6V @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 150mA, 10V
- Power - Max:
- 300 mW
- Frequency - Transition:
- 250MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
MMBT2222LT3 FAQ
1.How can I place an order for MMBT2222LT3 through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBT2222LT3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBT2222LT3 reliable?
The price and inventory of MMBT2222LT3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT2222LT3 is usually 5 days.
3.What payment methods are accepted for MMBT2222LT3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT2222LT3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBT2222LT3?
MMBT2222LT3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBT2222LT3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBT2222LT3?
For technical support, including MMBT2222LT3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT2222LT3 requirements.
6.How does Aetrix verify that MMBT2222LT3 is sourced from the original manufacturer or authorized distributors?
All MMBT2222LT3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT2222LT3 meets industry standards.
7.What is the process for return or replacement of MMBT2222LT3?
All MMBT2222LT3 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT2222LT3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBT2222LT3 part is unused and in its original packaging.
Return procedure for MMBT2222LT3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMBT2222LT3 Tags
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MMBT3906LT1G
onsemi
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MMBT3904-7-F
Diodes Incorporated
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MMBT3904LT1G
onsemi
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MMBT3906-7-F
Diodes Incorporated
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MMBT3904-TP
Micro Commercial Co
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MMBT2222A-7-F
Diodes Incorporated
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BC846BLT1G
onsemi
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BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
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MMBT2222A-TP
Micro Commercial Co
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MMBTA06LT1G
onsemi
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MMBT2222ALT1G
onsemi
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