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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MMBT2222LT3G

Name: MMBT2222LT3G
Brand: onsemi
SKU: MMBT2222LT3G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MMBT2222LT3G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MMBT2222LT3G.pdf

Description:: TRANS NPN 30V 0.6A SOT23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MMBT2222LT3G from onsemi is an NPN silicon general-purpose transistor in SOT-23 package, rated for 30 V_CEO, 600 mA continuous collector current, and 225 mW power dissipation on FR-5 board. It delivers DC current gain (h_FE) of 35–300 at I_C = 0.1–150 mA, with V_CE(sat) ≤ 0.4 V at I_C = 150 mA / I_B = 15 mA. It is widely used in low-voltage switching and amplification circuits such as LED drivers and signal buffering in consumer and industrial control modules.

For engineers reviewing the MMBT2222LT3G datasheet, pinout, applications, or equivalent options, key selection criteria include its 30 V_CEO rating, SOT-23 footprint compatibility, guaranteed h_FE range across operating currents, thermal derating behavior on standard PCBs, and RoHS-compliant Pb-free construction.

Technical Context

The MMBT2222LT3G operates as a discrete bipolar junction transistor with fixed NPN polarity and base-controlled current amplification. Its electrical behavior follows standard BJT large-signal and small-signal models, with verified f_T = 250 MHz at I_C = 20 mA, V_CE = 20 V, and C_obo = 8.0 pF at V_CB = 10 V - confirming suitability for medium-frequency switching and analog amplification up to ~100 MHz.

It exhibits defined saturation characteristics: V_CE(sat) ≤ 1.6 V at I_C = 500 mA / I_B = 50 mA and V_BE(sat) ≤ 2.6 V under same conditions, enabling predictable turn-on loss in digital logic interface and load-switching applications. Thermal resistance R_JA = 556 °C/W on FR-5 board establishes safe operating area limits per Figure 15, with derating starting at 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	30 V - Maximum allowable collector-emitter voltage before breakdown; defines safe operation in 24 V rail switching.
I_C Continuous	600 mA - Sustained collector current capacity; supports driving relays, small solenoids, or LED arrays.
h_FE Range	35–300 - DC current gain variation across 0.1–150 mA I_C; enables stable bias design in Class-A amplifiers and saturated switches.
V_CE(sat)	≤ 0.4 V @ I_C=150 mA/I_B=15 mA - Low saturation voltage minimizes conduction loss and self-heating in switching mode.
f_T	250 MHz - Transition frequency confirms usable bandwidth for RF preamp stages and fast digital signal conditioning.
P_D (FR-5)	225 mW @ 25°C - Power dissipation limit on standard epoxy PCB; requires thermal derating by 1.8 mW/°C above ambient.
C_obo	8.0 pF @ V_CB=10 V - Output capacitance impacts high-frequency response and switching speed in oscillator or buffer designs.

Pinout & Package

SOT-23 (TO-236) surface-mount package, 2.90 × 1.30 × 1.00 mm body size, 1.90 mm lead pitch. RoHS-compliant, Pb-free, halogen-free/BFR-free construction.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Current-controlled input node; requires series resistor to limit I_B and ensure saturation or linear operation.
2	Emitter	Common reference terminal; connects to ground or low-side return path in common-emitter configurations.
3	Collector	Output current terminal; sinks load current when biased; connects to V_CC via load in switch applications.

Key Features

Feature	Design Value
RoHS-compliant Pb-free packaging	Meets global environmental regulations without compromising solderability or reliability on reflow assembly lines.
Guaranteed h_FE ≥ 35 at I_C = 0.1 mA	Ensures reliable turn-on even with weak drive signals, critical for microcontroller GPIO interfacing.
V_CE(sat) ≤ 0.4 V at moderate drive	Reduces power loss and thermal stress in battery-powered or thermally constrained PCB layouts.
f_T = 250 MHz	Supports clean signal amplification and fast edge handling in clock buffers and pulse shaping circuits.
JEDEC-standard SOT-23 footprint	Enables drop-in replacement and layout reuse across multiple onsemi and industry-standard BJT families.

Applications

LED Driver Circuit	Microcontroller GPIO Interface
Use Scenario: Driving 20–100 mA indicator LEDs from 3.3 V or 5 V logic rails in embedded control panels. IC Role / Device Role / Timing Role: NPN switch configured in common-emitter topology, sinking LED current to ground. Use Value: Low V_CE(sat) ensures >95% efficiency at 50 mA load; h_FE ≥ 100 guarantees full saturation with 0.5 mA base drive from MCU pins.	Use Scenario: Level-shifting and current boosting between low-drive microcontroller outputs and higher-current peripherals. IC Role / Device Role / Timing Role: Signal amplifier and current buffer, translating logic-high/low into robust sink-source capability. Use Value: Predictable h_FE spread allows precise base resistor calculation; SOT-23 size fits dense MCU peripheral routing without footprint penalty.
DC Motor Control (Small)	Audio Pre-amplifier Stage
Use Scenario: PWM-driven control of 3–12 V brushed DC motors in robotics or actuator modules. IC Role / Device Role / Timing Role: Low-side switch modulating motor current; handles repetitive 1–20 kHz PWM with minimal switching loss. Use Value: Verified t_s ≤ 225 ns and t_f ≤ 60 ns enable clean PWM edges; 600 mA I_C rating supports motors drawing ≤ 400 mA average current.	Use Scenario: Single-transistor common-emitter preamp for electret microphones or sensor signal conditioning. IC Role / Device Role / Timing Role: Small-signal linear amplifier with fixed bias network, delivering voltage gain and impedance transformation. Use Value: h_fe = 50–300 at 1–10 mA provides stable mid-band gain; NF ≤ 4.0 dB at 1 kHz ensures low-noise audio front-end performance.

LED Driver Circuit

Microcontroller GPIO Interface

Use Scenario: Driving 20–100 mA indicator LEDs from 3.3 V or 5 V logic rails in embedded control panels.

IC Role / Device Role / Timing Role: NPN switch configured in common-emitter topology, sinking LED current to ground.

Use Value: Low V_CE(sat) ensures >95% efficiency at 50 mA load; h_FE ≥ 100 guarantees full saturation with 0.5 mA base drive from MCU pins.

Use Scenario: Level-shifting and current boosting between low-drive microcontroller outputs and higher-current peripherals.

IC Role / Device Role / Timing Role: Signal amplifier and current buffer, translating logic-high/low into robust sink-source capability.

Use Value: Predictable h_FE spread allows precise base resistor calculation; SOT-23 size fits dense MCU peripheral routing without footprint penalty.

DC Motor Control (Small)

Audio Pre-amplifier Stage

Use Scenario: PWM-driven control of 3–12 V brushed DC motors in robotics or actuator modules.

IC Role / Device Role / Timing Role: Low-side switch modulating motor current; handles repetitive 1–20 kHz PWM with minimal switching loss.

Use Value: Verified t_s ≤ 225 ns and t_f ≤ 60 ns enable clean PWM edges; 600 mA I_C rating supports motors drawing ≤ 400 mA average current.

Use Scenario: Single-transistor common-emitter preamp for electret microphones or sensor signal conditioning.

IC Role / Device Role / Timing Role: Small-signal linear amplifier with fixed bias network, delivering voltage gain and impedance transformation.

Use Value: h_fe = 50–300 at 1–10 mA provides stable mid-band gain; NF ≤ 4.0 dB at 1 kHz ensures low-noise audio front-end performance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PN2222A (ON Semiconductor)	TO-92 through-hole package; identical electrical specs but larger footprint and higher R_JA (200 °C/W).	Preferred for prototyping or low-volume manual assembly where SMT is impractical.	Select PN2222A only when through-hole mounting or legacy board compatibility is required.
BC847BW (Nexperia)	SOT-323 package (smaller than SOT-23); V_CEO = 45 V, h_FE = 110–800, but lower I_C = 100 mA continuous.	Better suited for low-power signal switching; not recommended for >150 mA loads due to current rating mismatch.	Choose BC847BW only for space-constrained, low-current signal routing - not for power switching roles of MMBT2222LT3G.

Compared with PN2222A and BC847BW, the MMBT2222LT3G uniquely balances SMT manufacturability, 600 mA current handling, and proven thermal performance on FR-5 boards - making it the optimal choice for production-grade 24 V control modules requiring reliability and scalability.

Availability

MMBT2222LT3G is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller interface modules, DC motor control subsystems, and audio preamplifier stages requiring stable component supply across high-mix, medium-volume production runs.

Supply support for MMBT2222LT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The MMBT2222LT3G belongs to onsemi's broad portfolio of general-purpose bipolar transistors designed for cost-sensitive, high-reliability switching and amplification in industrial controls, power supplies, and embedded interfaces.

FAQ

What is the maximum collector-emitter voltage rating for MMBT2222LT3G?

The MMBT2222LT3G has a maximum collector-emitter voltage (V_CEO) rating of 30 V DC. This value is specified under test conditions of I_C = 10 mA and I_B = 0, and defines the absolute upper limit before avalanche breakdown occurs. Exceeding this voltage risks permanent device failure, so designs must maintain margin - especially under inductive load switching or transient conditions.

Does MMBT2222LT3G support automotive-grade qualification?

No, the MMBT2222LT3G is not AEC-Q101 qualified. The automotive-qualified variant is the SMMBT2222ALT3G (with "S" prefix), which undergoes additional stress testing and PPAP documentation. The MMBT2222LT3G is intended for commercial and industrial applications where extended temperature range (−55°C to +150°C) and RoHS compliance are sufficient, but formal automotive qualification is not required.

What is the typical DC current gain (h_FE) of MMBT2222LT3G at 10 mA collector current?

At I_C = 10 mA and V_CE = 10 V, the MMBT2222LT3G exhibits a minimum h_FE of 75 and a maximum of 300. This wide gain range reflects process variation and must be accounted for in bias design - for example, using emitter degeneration or feedback networks to stabilize operating point across production lots.

Can MMBT2222LT3G be used in switching applications above 1 MHz?

Yes - the MMBT2222LT3G has a current-gain bandwidth product (f_T) of 250 MHz, and measured switching times (t_d ≤ 10 ns, t_r ≤ 25 ns, t_f ≤ 60 ns) confirm usability in digital switching up to ~5–10 MHz. However, practical circuit limitations - including PCB parasitics, drive strength, and load capacitance - typically restrict reliable operation to < 1 MHz in non-optimized layouts.

What is the thermal resistance (R_JA) of MMBT2222LT3G on a standard FR-5 PCB?

The MMBT2222LT3G has a thermal resistance from junction-to-ambient (R_JA) of 556 °C/W when mounted on a 1.0 × 0.75 × 0.062 inch FR-5 board at T_A = 25°C. This value assumes no copper pour or thermal vias; adding 1 cm² of 2 oz copper connected to the emitter pad reduces R_JA significantly - a design practice recommended for sustained >300 mA operation.

MMBT2222LT3G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 1.6V @ 50mA, 500mA

Current - Collector Cutoff (Max):: 10nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 150mA, 10V

Power - Max:: 300 mW

Frequency - Transition:: 250MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

MMBT2222LT3G FAQ

1.How can I place an order for MMBT2222LT3G through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT2222LT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT2222LT3G reliable?

The price and inventory of MMBT2222LT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT2222LT3G is usually 5 days.

3.What payment methods are accepted for MMBT2222LT3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT2222LT3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT2222LT3G?

MMBT2222LT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT2222LT3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT2222LT3G?

For technical support, including MMBT2222LT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT2222LT3G requirements.

6.How does Aetrix verify that MMBT2222LT3G is sourced from the original manufacturer or authorized distributors?

All MMBT2222LT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT2222LT3G meets industry standards.

7.What is the process for return or replacement of MMBT2222LT3G?

All MMBT2222LT3G units undergo pre-shipment inspection (PSI). If there is an issue with MMBT2222LT3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT2222LT3G part is unused and in its original packaging.

Return procedure for MMBT2222LT3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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