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onsemi MMBT2369

Part No.:
MMBT2369
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixMMBT2369.pdf
Description:
TRANS NPN 15V 0.2A SOT-23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,376

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Product details

Overview

MMBT2369 from ON Semiconductor is an NPN silicon switching transistor in SOT-23 package, rated for 15 V VCEO, 200 mA continuous collector current, and optimized for high-speed saturated switching at 10–100 mA collector currents in digital logic interface and low-power load control applications.

For engineers reviewing the MMBT2369 datasheet, pinout, applications, or equivalent options, key selection criteria include verified VCE(sat) ≤ 0.25 V at IC = 10 mA/IB = 1.0 mA, toff = 18 ns, hFE = 40–120 (IC = 10 mA), and thermal resistance RθJA = 357 °C/W on FR-4 PCB.

Technical Context

The MMBT2369 uses a planar epitaxial process (Fairchild Process 21) to achieve fast switching performance with low saturation voltage and controlled gain bandwidth. Its design targets discrete logic-level switching where low base drive and predictable turn-off timing are required.

It operates within a junction temperature range of –55 °C to +150 °C and supports pulsed collector current up to 400 mA (≤2% duty cycle). The device is not intended for linear amplification but is characterized for saturated switch operation with defined storage time (ts = 13 ns) and turn-on/turn-off times.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 15 V - Maximum safe collector-emitter voltage under open-base conditions; defines upper rail limit in 3.3 V/5 V logic-driven switch circuits.
IC (continuous) 200 mA - Continuous DC collector current handling capability; sufficient for driving LEDs, small relays, or MOSFET gates.
VCE(sat) ≤0.25 V @ IC=10 mA, IB=1.0 mA - Low saturation voltage minimizes power loss and self-heating during on-state operation.
hFE 40–120 @ IC=10 mA, VCE=1.0 V - Moderate DC current gain enables reliable saturation with standard TTL/CMOS logic drive levels.
toff 18 ns @ VCC=3.0 V, IC=10 mA - Fast turn-off supports switching frequencies up to ~10 MHz in non-resonant digital applications.
RθJA 357 °C/W - Thermal resistance on standard FR-4 PCB; limits usable continuous power dissipation to ~350 mW at 25 °C ambient.

Pinout & Package

SOT-23 plastic surface-mount package (3-pin, 1.90 mm × 1.30 mm × 0.95 mm), marked "1J", with gull-wing leads and standard JEDEC MO-178 footprint.

Pin/Terminal Circuit Role Design Meaning
1 (Emitter) Current sink terminal Connected to ground or low-side return path; base-emitter junction forward-biased to enable conduction.
2 (Base) Control input Receives logic-level current (≥1 mA typical) to drive transistor into saturation; requires current-limiting resistor in series.
3 (Collector) Current source terminal Connected to load and positive supply; carries switched load current when device is on; reverse-biased during off-state.

Key Features

Feature Design Value
High-speed switching Turn-off time toff = 18 ns enables use in >5 MHz digital interface and pulse-width modulation circuits.
Low VCE(sat) 0.25 V max ensures <10 mW conduction loss at 10 mA, reducing thermal stress in space-constrained layouts.
Controlled hFE range 40–120 at IC = 10 mA allows predictable base drive sizing without overdesign or risk of incomplete saturation.
SOT-23 footprint compatibility Standard JEDEC MO-178 outline enables drop-in replacement in existing 3-pin SOT-23 layouts without board rework.

Applications

LED Driver Circuit Digital Logic Level Shifter

Use Scenario: Driving single-color or RGB indicator LEDs from 3.3 V or 5 V microcontroller GPIO pins.

IC Role / Device Role / Timing Role: Low-side switch controlling LED anode-to-VCC current path; operates in saturated on/off states only.

Use Value: VCE(sat) ≤ 0.25 V ensures >95% efficiency in 20 mA LED drive, minimizing voltage headroom loss and heat generation.

Use Scenario: Translating 1.8 V logic outputs to 3.3 V or 5 V compatible inputs in mixed-voltage systems.

IC Role / Device Role / Timing Role: Active pull-up switch enabling bidirectional level translation without external resistors on the driven side.

Use Value: toff = 18 ns and ton = 12 ns support clean signal edges up to 20 Mbps in UART or SPI interface bridging.

Small Relay Driver Microcontroller Peripheral Enable Switch

Use Scenario: Activating 5 V or 12 V coil relays with microcontroller I/O pins incapable of sourcing >20 mA directly.

IC Role / Device Role / Timing Role: High-current gain interface stage providing ≥100 mA collector drive while limiting base current to ≤2 mA.

Use Value: hFE ≥ 40 at IC = 100 mA ensures reliable relay closure with minimal MCU port loading and no additional driver IC.

Use Scenario: Enabling/disabling power to peripheral ICs (e.g., sensors, transceivers) based on system sleep/wake state.

IC Role / Device Role / Timing Role: Load-switching element placed between VCC and peripheral VDD pin; controlled by MCU GPIO.

Use Value: Low leakage (ICBO ≤ 0.4 μA) prevents unintended wake-up or battery drain during deep-sleep modes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC846B Higher hFE (110–220), same SOT-23 package, VCEO = 65 V - over-spec'd voltage rating increases cost and may reduce switching speed slightly. Preferred in higher-voltage industrial I/O modules where 65 V transient immunity is required; less optimal for low-voltage, high-speed logic interfaces. Select BC846B only if VCEO > 15 V is mandated; otherwise MMBT2369 offers better speed/power trade-off at lower cost.
PN2222A TO-92 through-hole package, VCEO = 40 V, IC = 800 mA - larger footprint, higher current, slower switching (toff ≈ 250 ns). Suitable for prototyping or legacy through-hole designs; incompatible with automated SMT assembly and high-frequency layouts. Choose PN2222A only for hand-soldered evaluation or where mechanical robustness outweighs PCB area and speed constraints.

Compared with BC846B and PN2222A, the MMBT2369 delivers the best balance of speed (18 ns toff), low-loss saturation (0.25 V), and SMT manufacturability in compact consumer and portable electronics, without over-engineering voltage or current ratings.

Availability

MMBT2369 is available at Aetrix Electronics and suitable for LED driver circuits, digital logic level shifters, small relay drivers, and microcontroller peripheral enable switches requiring stable component supply and consistent SOT-23 form factor.

Supply support for MMBT2369 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensor, and logic solutions for automotive, industrial, cloud computing, and IoT applications.

The MMBT2369 belongs to ON Semiconductor's general-purpose bipolar transistor product line, designed specifically for cost-sensitive, high-volume discrete switching applications in portable and embedded systems.

FAQ

What is the maximum continuous collector current rating for the MMBT2369?

The MMBT2369 has a maximum continuous collector current (IC) rating of 200 mA at TA = 25 °C. This rating assumes operation within the specified thermal limits and derates linearly above 25 °C at 2.8 mW/°C. At elevated ambient temperatures or with limited PCB copper area, actual usable current must be reduced to maintain junction temperature ≤150 °C. The MMBT2369 datasheet confirms this value under Absolute Maximum Ratings.

Is the MMBT2369 pin-compatible with the PN2369?

Yes - the MMBT2369 and PN2369 share identical electrical specifications, pinout (Emitter-Base-Collector), and SOT-23 package dimensions. The MMBT prefix denotes the surface-mount version, while PN denotes the through-hole TO-92 variant; however, both part numbers refer to functionally equivalent devices per Fairchild/ON Semiconductor documentation. The MMBT2369 is the SMT counterpart explicitly designated for automated assembly.

What is the typical VCE(sat) of the MMBT2369 under standard switching conditions?

The MMBT2369 exhibits a typical VCE(sat) of 0.25 V when operated at IC = 10 mA and IB = 1.0 mA, as confirmed in the Electrical Characteristics table of the official datasheet. This low saturation voltage ensures minimal power dissipation (<2.5 mW) and supports efficient switching in battery-powered and thermally constrained applications using the MMBT2369.

Can the MMBT2369 be used in linear amplifier configurations?

No - the MMBT2369 is explicitly characterized and optimized for saturated switching operation, not linear amplification. Its datasheet specifies parameters like toff, ton, and VCE(sat), but omits small-signal parameters such as fT or noise figure required for amplifier design. Using the MMBT2369 in analog gain stages may yield unpredictable gain, distortion, and thermal instability due to uncharacterized linearity and bias behavior.

What is the thermal resistance (RθJA) of the MMBT2369 on a standard PCB?

The MMBT2369 has a junction-to-ambient thermal resistance (RθJA) of 357 °C/W when mounted on a standard FR-4 PCB measuring 1.6" × 1.6" × 0.06". This value is measured under defined test conditions and reflects realistic thermal performance in typical 2-layer board layouts without added copper pour or heatsinking. It directly determines the MMBT2369's maximum allowable power dissipation at a given ambient temperature.

MMBT2369 Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
200 mA
Voltage - Collector Emitter Breakdown (Max):
15 V
Vce Saturation (Max) @ Ib, Ic:
250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):
30µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 10mA, 1V
Power - Max:
350 mW
Frequency - Transition:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

MMBT2369 FAQ

1.How can I place an order for MMBT2369 through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT2369 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT2369 reliable?

The price and inventory of MMBT2369 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT2369 is usually 5 days.

3.What payment methods are accepted for MMBT2369?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT2369 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT2369?

MMBT2369 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT2369 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT2369?

For technical support, including MMBT2369 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT2369 requirements.

6.How does Aetrix verify that MMBT2369 is sourced from the original manufacturer or authorized distributors?

All MMBT2369 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT2369 meets industry standards.

7.What is the process for return or replacement of MMBT2369?

All MMBT2369 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT2369, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT2369 part is unused and in its original packaging.

Return procedure for MMBT2369:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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