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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MMBT2369ALT3G

Name: MMBT2369ALT3G
Brand: onsemi
SKU: MMBT2369ALT3G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MMBT2369ALT3G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MMBT2369ALT3G.pdf

Description:: TRANS NPN 15V 0.2A SOT23-3

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Product details

Overview

MMBT2369ALT3G from onsemi is an NPN silicon switching transistor in SOT-23 package, rated for V_CEO = 15 V, I_C = 200 mA, and V_CE(sat) ≤ 0.20 V at I_C = 10 mA / I_B = 1 mA. It delivers fast switching with t_on ≤ 12 ns and t_off ≤ 18 ns, and is AEC-Q101 qualified for automotive signal routing and load control.

For engineers reviewing the MMBT2369ALT3G datasheet, pinout, applications, or equivalent options, this page provides verified electrical parameters, thermal derating behavior, junction-to-ambient resistance (R_JA = 417 °C/W on alumina), saturation voltage limits across temperature, and confirmed SOT-23 Style 6 pin assignment.

Technical Context

This device operates as a general-purpose NPN bipolar junction transistor optimized for low-voltage, medium-current switching in digital logic interfaces and power management stages. Its design emphasizes low V_CE(sat) and fast turn-on/turn-off times under I_C/I_B = 10, enabling efficient drive of LEDs, relays, and small-signal MOSFET gates.

It supports operation from −55 °C to +150 °C with guaranteed h_FE ≥ 40 at I_C = 10 mA and V_CE = 1.0 V, and exhibits C_obo ≤ 4.0 pF at V_CB = 5 V - critical for high-frequency noise immunity and minimal capacitive loading in timing circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	15 V - Maximum collector-emitter voltage before breakdown under open-base conditions; defines safe operating range in low-side switch configurations.
I_C (continuous)	200 mA - Continuous collector current rating; sets upper limit for steady-state load driving without thermal runaway on FR-5 board.
V_CE(sat) max	0.20 V at I_C = 10 mA / I_B = 1 mA - Ensures <1 mW conduction loss per switch event, minimizing self-heating in battery-powered logic buffers.
t_off max	18 ns - Guarantees sub-20 ns turn-off delay in 100 MHz clocked systems, supporting clean edge transitions in pulse-width modulation drivers.
R_JA (alumina)	417 °C/W - Thermal resistance when mounted on 0.4 × 0.3 × 0.024 in. 99.5% alumina substrate; enables 300 mW dissipation at T_A = 25 °C.
h_FE min	40 at I_C = 10 mA / V_CE = 1.0 V - Provides sufficient DC gain to achieve full saturation with modest base drive, reducing MCU GPIO current burden.
C_obo	4.0 pF at V_CB = 5 V - Low output capacitance minimizes Miller effect and preserves signal integrity in high-speed digital interface applications.

Pinout & Package

SOT-23 (TO-236) surface-mount package, 2.90 mm × 1.30 mm × 1.00 mm body with 1.90 mm lead pitch. Compliant with JEDEC MO-178, RoHS, Pb-free, and halogen-free standards.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input node requiring ~1 mA drive to saturate 10 mA collector load; polarity-sensitive for NPN forward biasing.
2	Emitter	Common reference terminal tied to ground or low-side return path; carries full load current and must be routed with low-inductance trace.
3	Collector	Switched output node connected to load (e.g., LED anode or relay coil); reverse-biased during off-state up to 40 V (V_CES).

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing - suitable for under-hood infotainment and body control modules.
V_CE(sat) ≤ 0.20 V @ 10 mA	Reduces conduction loss by >50% versus standard 2N3904-class transistors, extending battery life in portable sensor nodes and wireless transceivers.
t_on/t_off ≤ 12/18 ns	Enables clean 50 MHz square-wave switching without overshoot or ringing, supporting precise timing in encoder interfaces and motor commutation logic.
−55 °C to +150 °C operation	Supports deployment in industrial PLC I/O modules and automotive engine control units where ambient temperatures exceed 125 °C.
C_obo ≤ 4.0 pF	Limits capacitive coupling between collector and base, preventing unintended turn-on in high-dV/dt environments such as solenoid driver outputs.

Applications

Automotive Door Module	Industrial Sensor Interface
Use Scenario: Driving window lift motor enable signals and mirror fold/unfold relays in centralized door control units. IC Role / Device Role / Timing Role: Low-side switch controlling 12 V DC loads with microsecond-level response to LIN bus commands. Use Value: V_CE(sat) ≤ 0.20 V ensures <2.4 mW power loss per channel at 12 V/100 mA, reducing thermal stress in compact multi-channel PCB layouts.	Use Scenario: Level-shifting and isolating analog sensor outputs (e.g., thermistor bridges) into 3.3 V ADC inputs of programmable logic controllers. IC Role / Device Role / Timing Role: Active pull-down stage converting 0–5 V sensor signals to 0–3.3 V logic-compatible levels with rail-to-rail swing. Use Value: Fast t_off ≤ 18 ns prevents sampling distortion during 1 MSPS ADC conversions, preserving measurement fidelity in real-time monitoring.
USB-C Power Delivery Logic	Smart Home Lighting Control
Use Scenario: Enabling/disabling USB-C CC line termination resistors and VCONN power paths based on port role negotiation. IC Role / Device Role / Timing Role: Bidirectional signal switch managing CC line pull-up/pull-down states with sub-20 ns transition control. Use Value: C_obo ≤ 4.0 pF avoids signal integrity degradation on 300 kHz PD communication lines, ensuring robust BMC encoding.	Use Scenario: PWM dimming control of white LED strings in Zigbee/Z-Wave enabled ceiling fixtures with integrated MCU. IC Role / Device Role / Timing Role: Gate driver for discrete MOSFETs delivering 100–200 mA LED current at 1–5 kHz PWM frequencies. Use Value: h_FE ≥ 40 at I_C = 30 mA allows direct GPIO drive without external base resistor networks, simplifying BOM and layout.

Automotive Door Module

Industrial Sensor Interface

Use Scenario: Driving window lift motor enable signals and mirror fold/unfold relays in centralized door control units.

IC Role / Device Role / Timing Role: Low-side switch controlling 12 V DC loads with microsecond-level response to LIN bus commands.

Use Value: V_CE(sat) ≤ 0.20 V ensures <2.4 mW power loss per channel at 12 V/100 mA, reducing thermal stress in compact multi-channel PCB layouts.

Use Scenario: Level-shifting and isolating analog sensor outputs (e.g., thermistor bridges) into 3.3 V ADC inputs of programmable logic controllers.

IC Role / Device Role / Timing Role: Active pull-down stage converting 0–5 V sensor signals to 0–3.3 V logic-compatible levels with rail-to-rail swing.

Use Value: Fast t_off ≤ 18 ns prevents sampling distortion during 1 MSPS ADC conversions, preserving measurement fidelity in real-time monitoring.

USB-C Power Delivery Logic

Smart Home Lighting Control

Use Scenario: Enabling/disabling USB-C CC line termination resistors and VCONN power paths based on port role negotiation.

IC Role / Device Role / Timing Role: Bidirectional signal switch managing CC line pull-up/pull-down states with sub-20 ns transition control.

Use Value: C_obo ≤ 4.0 pF avoids signal integrity degradation on 300 kHz PD communication lines, ensuring robust BMC encoding.

Use Scenario: PWM dimming control of white LED strings in Zigbee/Z-Wave enabled ceiling fixtures with integrated MCU.

IC Role / Device Role / Timing Role: Gate driver for discrete MOSFETs delivering 100–200 mA LED current at 1–5 kHz PWM frequencies.

Use Value: h_FE ≥ 40 at I_C = 30 mA allows direct GPIO drive without external base resistor networks, simplifying BOM and layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT3904LT1G	V_CEO = 40 V, V_CE(sat) = 0.2 V @ 10 mA, but h_FE min = 100 - higher gain but slower t_off (≤ 50 ns) and no AEC-Q101 qualification.	Preferred in non-automotive consumer electronics where higher voltage margin and gain outweigh speed and qualification needs.	Select MMBT3904LT1G only if system requires >15 V collector swing or tighter h_FE tolerance; not recommended for automotive or high-speed PWM.
BC846BMTF	V_CEO = 65 V, R_JA = 450 °C/W, t_off ≤ 20 ns - wider voltage range but slightly higher saturation voltage (0.25 V) and no AEC-Q101 validation.	Suitable for industrial AC/DC auxiliary supplies where 65 V breakdown margin is required for transient protection.	Choose BC846BMTF when designing for universal input SMPS feedback loops or mains-connected IoT gateways needing >40 V standoff.

Compared with MMBT3904LT1G and BC846BMTF, the MMBT2369ALT3G offers the best combination of automotive qualification, sub-20 ns switching, and ultra-low V_CE(sat) - making it optimal for space-constrained, thermally sensitive, and safety-critical low-voltage switching tasks.

Availability

MMBT2369ALT3G is available at Aetrix Electronics and suitable for automotive body electronics, industrial sensor signal conditioning, and smart lighting control requiring stable component supply and long-term lifecycle support.

Supply support for MMBT2369ALT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.

The MMBT2369ALT3G belongs to onsemi's precision bipolar switching transistor family designed specifically for AEC-Q101-compliant, high-reliability signal routing and load switching in harsh-environment electronics.

FAQ

What is the maximum continuous collector current rating for the MMBT2369ALT3G?

The MMBT2369ALT3G has a maximum continuous collector current (I_C) rating of 200 mA at T_A = 25 °C on an FR-5 board. Derating applies above 25 °C at 1.8 mW/°C, limiting usable current in elevated ambient conditions unless heatsinking is improved.

Is the MMBT2369ALT3G qualified for automotive applications?

Yes, the MMBT2369ALT3G is AEC-Q101 qualified and PPAP capable. Its qualification covers temperature cycling, highly accelerated life testing, and ESD robustness - confirming suitability for automotive body control, lighting, and infotainment subsystems.

What is the pin configuration of the MMBT2369ALT3G in the SOT-23 package?

The MMBT2369ALT3G uses SOT-23 Style 6 pinout: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. This matches JEDEC TO-236 outline and is verified in onsemi's mechanical drawings and marking diagrams.

How does the MMBT2369ALT3G compare to the standard MMBT2369L variant?

The MMBT2369ALT3G features tighter h_FE consistency (min 40 vs. 20 for MMBT2369L), lower V_CE(sat) (0.20 V vs. 0.25 V), and AEC-Q101 qualification - making it the preferred choice for automotive and high-reliability designs where parameter stability matters.

What thermal resistance values apply to the MMBT2369ALT3G on different substrates?

On FR-5 board, R_JA = 556 °C/W (PD = 225 mW); on 99.5% alumina substrate, R_JA = 417 °C/W (PD = 300 mW). These values define safe power dissipation limits and guide thermal pad layout decisions for high-duty-cycle operation.

MMBT2369ALT3G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 200 mA

Voltage - Collector Emitter Breakdown (Max):: 15 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 10mA, 100mA

Current - Collector Cutoff (Max):: 400nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 20 @ 100mA, 1V

Power - Max:: 225 mW

Frequency - Transition:: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

MMBT2369ALT3G FAQ

1.How can I place an order for MMBT2369ALT3G through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT2369ALT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT2369ALT3G reliable?

The price and inventory of MMBT2369ALT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT2369ALT3G is usually 5 days.

3.What payment methods are accepted for MMBT2369ALT3G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT2369ALT3G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT2369ALT3G?

MMBT2369ALT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT2369ALT3G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT2369ALT3G?

For technical support, including MMBT2369ALT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT2369ALT3G requirements.

6.How does Aetrix verify that MMBT2369ALT3G is sourced from the original manufacturer or authorized distributors?

All MMBT2369ALT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT2369ALT3G meets industry standards.

7.What is the process for return or replacement of MMBT2369ALT3G?

All MMBT2369ALT3G units undergo pre-shipment inspection (PSI). If there is an issue with MMBT2369ALT3G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT2369ALT3G part is unused and in its original packaging.

Return procedure for MMBT2369ALT3G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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