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onsemi MMBT2369LT3G
- Part No.:
- MMBT2369LT3G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
MMBT2369LT3G.pdf
- Description:
- TRANS NPN 15V 0.2A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:6,701
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Product details
Overview
MMBT2369LT3G from onsemi is an NPN silicon switching transistor in SOT-23 package, rated for 15 VCEO, 200 mA continuous collector current, and 0.25 VCE(sat) at IC = 10 mA / IB = 1 mA. It delivers fast switching with ton ≤ 12 ns and toff ≤ 18 ns, and is widely used in low-power digital logic interface and signal routing circuits.
For engineers reviewing the MMBT2369LT3G datasheet, pinout, applications, or equivalent options, key selection criteria include its guaranteed hFE ≥ 40 at 10 mA, VBE(sat) ≤ 0.85 V, thermal resistance of 556 °C/W on FR-5 board, and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This device operates as a general-purpose NPN bipolar junction transistor optimized for high-speed switching rather than linear amplification. Its design emphasizes low saturation voltage, tight hFE distribution, and stable performance across −55 °C to +150 °C junction temperature range.
It supports DC biasing with VEB ≤ 4.5 V and withstands VCB up to 40 V in cutoff. The 4.0 pF Cobo at 5 V and fT ≥ 100 MHz (hfe = 5.0) confirm suitability for RF-coupled switching and pulse generation up to ~50 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 15 V - Maximum safe collector-emitter voltage under open-base conditions; defines rail compatibility in 12 V logic and sensor interface circuits. |
| IC (continuous) | 200 mA - Continuous collector current handling capacity; supports driving small relays, LEDs, or logic gates without forced cooling. |
| VCE(sat) | 0.25 V max at IC = 10 mA / IB = 1 mA - Ensures <1 mW power loss in saturated switch mode, minimizing self-heating in battery-powered systems. |
| hFE | 40–120 - DC current gain range at IC = 10 mA / VCE = 1 V; enables reliable base drive design with margin for temperature and process variation. |
| toff | 10–18 ns - Turn-off time at IC = 10 mA; allows operation in PWM control up to ~30 MHz with minimal dead-time overhead. |
| RJA (FR-5) | 556 °C/W - Junction-to-ambient thermal resistance on standard PCB; determines maximum power dissipation before derating at elevated ambient temperatures. |
| Cobo | 4.0 pF max at VCB = 5 V - Output capacitance limiting high-frequency signal coupling and affecting rise/fall edge fidelity in fast-switching nodes. |
Pinout & Package
SOT-23 (TO-236) surface-mount package, 2.90 × 1.30 × 1.00 mm, Pb-free, RoHS-compliant, with gull-wing leads and moisture sensitivity level (MSL) 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal for forward-biasing the BE junction; requires ~0.7–0.85 V drive and 1 mA typical base current to saturate at 10 mA collector load. |
| 2 | Emitter | Current return path; internally connected to substrate; must be tied to lowest potential node in common-emitter configuration. |
| 3 | Collector | Output current sink terminal; connects to load (e.g., LED anode or relay coil); rated for 40 V breakdown in open-emitter condition. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control modules and body electronics where reliability over temperature cycling and vibration is critical. |
| Low VCE(sat) | 0.25 V max ensures <2.5% voltage drop across switch at 10 mA, preserving headroom in 3.3 V and 5 V logic-level interfaces. |
| Fast switching | ton ≤ 12 ns and toff ≤ 18 ns enable clean pulse transmission in clock buffering, data line steering, and gate driving for low-side MOSFETs. |
| Pb-free & RoHS compliant | Meets global environmental regulations; compatible with lead-free reflow profiles (peak ≤ 260 °C) and halogen-free board assembly requirements. |
| Wide TJ range | −55 °C to +150 °C operation supports deployment in industrial motor drives, outdoor sensors, and under-hood automotive modules. |
Applications
| Logic Level Translation | LED Driver Switch |
|---|---|
|
Use Scenario: Converting 1.8 V or 3.3 V microcontroller GPIO outputs to drive 5 V TTL/CMOS inputs. IC Role / Device Role / Timing Role: NPN switch configured in common-emitter topology to invert and level-shift signals. Use Value: Guaranteed hFE ≥ 40 ensures full saturation with 1 mA base drive, enabling robust noise margin and <10 ns propagation delay. |
Use Scenario: Driving indicator LEDs in portable medical devices and handheld test equipment. IC Role / Device Role / Timing Role: Low-side current sink switch controlling LED cathode connection to ground. Use Value: VCE(sat) ≤ 0.25 V minimizes power loss and heat generation, extending battery life and avoiding thermal derating at 20 mA LED current. |
| Relay Coil Driver | PWM Signal Buffer |
|
Use Scenario: Activating 5 V/12 V electromagnetic relays in HVAC controllers and PLC I/O modules. IC Role / Device Role / Timing Role: Saturated switch interfacing MCU output to relay coil with flyback diode protection. Use Value: 200 mA IC rating accommodates typical 40–100 mA relay coils; fast toff reduces contact arcing during deactivation. |
Use Scenario: Isolating and amplifying PWM signals from microcontrollers to motor driver enable inputs. IC Role / Device Role / Timing Role: High-speed digital buffer stage restoring signal integrity and current drive capability. Use Value: 100 MHz fT and 4 pF Cobo preserve PWM edge sharpness up to 20 kHz, preventing duty cycle distortion in closed-loop motor control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN switching transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC846B,215 (Nexperia) | VCEO = 65 V, hFE = 200–450, VCE(sat) = 0.25 V @ 100 mA - higher voltage rating but looser hFE spread and slower toff (25 ns). | Preferred in 24 V industrial control where overvoltage margin is critical; less optimal for low-voltage, high-speed timing-critical paths. | Select BC846B,215 when system voltage exceeds 15 V or tighter hFE tolerance is not required. |
| PN2222A (ON Semiconductor) | TO-92 package, VCEO = 40 V, IC = 800 mA, toff = 250 ns - higher current and voltage, but significantly slower and through-hole only. | Suitable for prototyping and low-frequency relay/LED drivers where PCB space and speed are not constrained. | Choose PN2222A for breadboard development or legacy through-hole designs requiring higher current headroom. |
Compared with BC846B,215 and PN2222A, the MMBT2369LT3G offers the best balance of speed, low-voltage saturation, and SOT-23 footprint for space-constrained 3.3 V/5 V digital interface applications - especially where AEC-Q101 compliance and consistent toff < 18 ns are mandatory.
Availability
MMBT2369LT3G is available at Aetrix Electronics and suitable for logic level translation, LED driver switching, and relay coil driving requiring stable component supply in automotive, industrial, and portable electronics programs.
Supply support for MMBT2369LT3G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The MMBT2369LT3G belongs to onsemi's general-purpose bipolar transistor product line, engineered for high-reliability, high-speed switching in compact SOT-23 packages for cost-sensitive and space-constrained embedded systems.
FAQ
What is the maximum operating temperature for the MMBT2369LT3G?
The MMBT2369LT3G has a specified junction and storage temperature range of −55 °C to +150 °C. This wide range enables use in under-hood automotive environments and industrial enclosures without external thermal management. Derating begins above 25 °C per the 1.8 mW/°C thermal coefficient on FR-5 board. The MMBT2369LT3G maintains functional hFE and VCE(sat) performance across this full range when operated within its absolute maximum ratings.
Is the MMBT2369LT3G pin-compatible with other SOT-23 NPN transistors?
The MMBT2369LT3G uses Style 6 pinout (Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector), matching industry-standard SOT-23 NPN assignments. However, pin compatibility alone does not guarantee functional equivalence - parameters like hFE, VCE(sat), and switching speed differ across variants. Always verify electrical behavior in circuit simulation or prototype testing before substitution. The MMBT2369LT3G's specific timing and gain characteristics are validated per its datasheet, not assumed from package alignment.
Does the MMBT2369LT3G require a base resistor in switching applications?
Yes, the MMBT2369LT3G requires an external base resistor to limit IB and ensure saturation without overstressing the driving source. For example, with a 3.3 V GPIO driving the base and VBE(sat) ≈ 0.85 V, a 2.2 kΩ resistor delivers ~1.1 mA IB, sufficient to saturate the MMBT2369LT3G at IC = 10 mA (hFE ≥ 40). Omitting the resistor risks excessive base current, thermal runaway, or damage to the driving IC. The MMBT2369LT3G datasheet specifies IB = 1 mA as the reference condition for VCE(sat) measurement.
What packaging format is available for the MMBT2369LT3G?
The MMBT2369LT3G is supplied in tape-and-reel format with 10,000 units per reel, optimized for automated SMT placement. Its SOT-23 package features gull-wing leads, Pb-free terminations, and RoHS compliance. The marking "M" indicates Pb-free construction, and date code orientation follows onsemi's standard convention. No tray or tube options are listed for this variant - the MMBT2369LT3G is exclusively offered in 10k tape-and-reel per the official ordering information.
How does the MMBT2369LT3G compare to the MMBT2369ALT3G variant?
The MMBT2369ALT3G is the "A" version with enhanced hFE performance: minimum hFE = 40 at IC = 10 mA / VCE = 0.35 V (vs. 1.0 V for standard MMBT2369LT3G), and lower VCE(sat) = 0.20 V at same conditions. The MMBT2369LT3G remains suitable for general-purpose switching where tighter gain or ultra-low saturation is not required. Both share identical pinout, package, and AEC-Q101 qualification - the choice depends on whether the application demands improved low-VCE performance under partial saturation.
MMBT2369LT3G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 200 mA
- Voltage - Collector Emitter Breakdown (Max):
- 15 V
- Vce Saturation (Max) @ Ib, Ic:
- 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):
- 400nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 40 @ 10mA, 350mV
- Power - Max:
- 225 mW
- Frequency - Transition:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
MMBT2369LT3G FAQ
1.How can I place an order for MMBT2369LT3G through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBT2369LT3G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBT2369LT3G reliable?
The price and inventory of MMBT2369LT3G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT2369LT3G is usually 5 days.
3.What payment methods are accepted for MMBT2369LT3G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT2369LT3G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBT2369LT3G?
MMBT2369LT3G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBT2369LT3G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBT2369LT3G?
For technical support, including MMBT2369LT3G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT2369LT3G requirements.
6.How does Aetrix verify that MMBT2369LT3G is sourced from the original manufacturer or authorized distributors?
All MMBT2369LT3G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT2369LT3G meets industry standards.
7.What is the process for return or replacement of MMBT2369LT3G?
All MMBT2369LT3G units undergo pre-shipment inspection (PSI). If there is an issue with MMBT2369LT3G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBT2369LT3G part is unused and in its original packaging.
Return procedure for MMBT2369LT3G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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