Infineon Technologies MMBT2907ALT1HTSA1

Overview

MMBT2907ALT1HTSA1 from ON Semiconductor is a PNP silicon switching transistor in SOT-23 package, rated for 60 V V_CEO, 600 mA I_C, and 330 mW P_tot at T_S ≤ 77 °C, with V_CE(sat) = 0.4 V (IC = 150 mA, IB = 15 mA), h_FE = 100 min (IC = 1 mA, V_CE = 10 V), and f_T = 200 MHz - used in low-voltage logic-level switching and complementary pair circuits with MMBT2222A.

For engineers reviewing the MMBT2907ALT1HTSA1 datasheet, MMBT2907ALT1HTSA1 pinout, MMBT2907ALT1HTSA1 application, or MMBT2907ALT1HTSA1 equivalent, key selection criteria include verified V_CE(sat) at high I_C, thermal resistance R_thJS ≤ 220 K/W, AEC-Q101 qualification, RoHS compliance, and SOT-23 footprint compatibility in space-constrained PCBs.

Technical Context

This PNP bipolar junction transistor operates as a saturated switch in DC-coupled digital interface and level-shifting stages, supporting fast switching with t_d = 10 ns, t_r = 40 ns, t_stg = 80 ns, and t_f = 30 ns under standardized test conditions (V_CC = 30 V, I_C = 150 mA).

Its complementary NPN counterpart is MMBT2222A; both share identical SOT-23 packaging, AEC-Q101 qualification, and Pb-free construction. Device behavior is characterized across temperature (–50 °C to +150 °C) and current (100 µA to 500 mA) ranges, with h_FE and V_CE(sat) curves provided in official application plots.

Key Specifications

Pinout & Package

SOT-23 surface-mount plastic package with gull-wing leads, 1.3 mm × 2.9 mm footprint, 1.15 mm height, and moisture sensitivity level (MSL) 1 - suitable for reflow soldering per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching transistor applications.

Compared with MMBT2907ALT1HTSA1, MMBT2907AWT1G offers identical performance in alternate packaging, while PN2907A trades SMT scalability and speed for through-hole ease-of-use - making the original optimal for AEC-Q101-compliant, high-density automotive PCBs.

Availability

MMBT2907ALT1HTSA1 is available at Aetrix Electronics and suitable for automotive body control units, industrial PLC output stages, and consumer appliance power sequencing requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for MMBT2907ALT1HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, and medical markets.

This device belongs to ON Semiconductor's general-purpose bipolar transistor product line, designed specifically for robust, cost-effective switching in automotive and industrial control systems where reliability and thermal performance are critical.

FAQ

Is MMBT2907ALT1HTSA1 pin-compatible with MMBT2222A?

No - MMBT2907ALT1HTSA1 is a PNP transistor with pinout E-B-C (Pin 1–2–3), while MMBT2222A is NPN with pinout E-B-C reversed (Pin 1–2–3 = E-B-C for NPN, but internal doping polarity and biasing are opposite). They are complementary in function but not pin-swappable without circuit redesign.

What is the maximum operating temperature for continuous use?

The junction temperature limit is 150 °C, and the storage temperature range is –65 °C to +150 °C. For continuous operation at full 600 mA I_C, derating per the P_tot vs. T_S curve is required - at T_S = 77 °C, P_tot = 330 mW is the absolute maximum; above that, power must be reduced linearly to maintain T_j ≤ 150 °C.

Does this part support pulse operation beyond its DC ratings?

Yes - the permissible pulse load curve shows P_tot(max)/P_tot(DC) ratio up to 10× for pulse widths ≤ 100 µs (duty cycle ≤ 2%). At t_p = 10 µs, peak current can reach ~1.9 A assuming V_CE ≈ V_CE(sat), provided thermal mass and layout allow transient junction temperature to remain below 150 °C.

How does the AEC-Q101 qualification impact design validation?

AEC-Q101 certification confirms successful completion of stress tests including HTGB (1000 hrs at 150 °C), temperature cycling (1000 cycles, –40 °C to +125 °C), and ESD (HBM ≥ 2 kV), eliminating need for duplicate qualification by Tier 1 suppliers - accelerating automotive program timelines and reducing validation overhead.