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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MMBT3416LT3

Name: MMBT3416LT3
Brand: onsemi
SKU: MMBT3416LT3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MMBT3416LT3

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: -

Datasheet:: MMBT3416LT3.pdf

Description:: TRANS NPN GP 25V 100MA SOT-23

Quantity:: RFQ Add To RFQ list

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Product details

Overview

MMBT3416LT3 from onsemi is an NPN silicon general-purpose amplifier transistor in SOT-23 package, rated for 40 V_CEO, 100 mA continuous collector current, and DC current gain (h_FE) of 75–225 at I_C = 2.0 mA. It operates across −55°C to +150°C junction temperature and serves as a low-noise signal amplifier in portable audio preamps, sensor interface stages, and discrete logic-level translators.

For engineers reviewing the MMBT3416LT3 datasheet, pinout, applications, or equivalent options, key selection criteria include its 40 V breakdown rating, 225 mW power dissipation on FR-5 board, low 0.3 V_CE(sat) at 50 mA/3 mA drive, and verified noise performance down to 1 kHz - critical for battery-powered analog front-ends and precision bias networks.

Technical Context

This NPN bipolar junction transistor features a planar epitaxial structure optimized for general-purpose linear amplification and switching. Its h_FE range (75–225) supports stable DC biasing across production lots, while thermal resistance R_JA = 556°C/W (FR-5) enables operation up to +125°C ambient with appropriate derating.

Small-signal characteristics include f_T > 250 MHz (typical), C_ob ≈ 4.5 pF at V_CB = 10 V, and input impedance h_ie ≈ 3.5 kΩ at I_C = 2 mA - confirming suitability for RF-coupled audio gain stages and fast-switching digital interfaces below 10 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	40 V - Maximum collector-emitter voltage before breakdown; sets safe operating voltage headroom for 3.3 V and 5 V rail applications.
I_C (continuous)	100 mA - Continuous collector current limit; supports moderate-drive signal conditioning without forced cooling.
h_FE	75–225 - DC current gain range at I_C = 2.0 mA, V_CE = 4.5 V; ensures predictable bias point stability across temperature and process variation.
V_CE(sat)	≤ 0.3 V at I_C = 50 mA, I_B = 3.0 mA - Low saturation voltage minimizes conduction loss in active-load or switch-mode configurations.
R_JA	556°C/W - Junction-to-ambient thermal resistance on FR-5 board; defines required PCB copper area and airflow for thermal management.
f_T	> 250 MHz - Current-gain bandwidth product; validates usability in wideband audio and low-MHz RF amplification stages.
Package	SOT-23 (TO-236) - Standard 3-pin surface-mount package with 2.90 × 1.30 × 1.00 mm footprint; compatible with automated pick-and-place and reflow.

Pinout & Package

SOT-23 (TO-236) package per Case 318, Style 6: 2.90 mm × 1.30 mm × 1.00 mm body, 1.90 mm lead pitch, Pb-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for forward-biased base-emitter junction; requires current-limited drive (e.g., via 10 kΩ resistor) to avoid overdrive.
2	Emitter	Current sink node; connected to ground or negative rail in common-emitter configuration; establishes reference for V_BE bias.
3	Collector	Output current source node; connects to load (e.g., pull-up resistor or next-stage input); must remain ≤ 40 V relative to emitter.

Key Features

Feature	Design Value
Low noise figure	1.0 dB at 1 kHz, I_C = 1.0 mA, R_S = 1 kΩ - enables high-fidelity audio preamplification without added op-amp stages.
Fast switching	t_on < 30 ns, t_off < 250 ns at I_C/I_B = 10 - supports clean digital signal inversion and pulse shaping up to 3 MHz.
High h_FE consistency	h_FE ≥ 75 guaranteed min at I_C = 2 mA - reduces need for emitter degeneration resistors in fixed-bias amplifier designs.
Wide temperature range	Junction operation from −55°C to +150°C - validated for automotive under-hood and industrial control environments.
Pb-free & RoHS	Halogen-free/BFR-free construction per J-STD-609 - meets global environmental compliance without performance trade-offs.

Applications

Portable Audio Preamp	Sensor Signal Conditioning
Use Scenario: Amplifying low-level microphone or piezoelectric sensor outputs in battery-powered wearables and IoT edge nodes. IC Role / Device Role / Timing Role: NPN common-emitter small-signal amplifier with DC-coupled input and emitter-degenerated bias network. Use Value: 1.0 dB noise figure at 1 kHz and 75–225 h_FE ensure high SNR and stable gain without trimming components.	Use Scenario: Converting weak analog signals from thermistors, strain gauges, or photodiodes into robust voltage levels for ADC input. IC Role / Device Role / Timing Role: Discrete transimpedance or voltage follower stage in multi-stage analog front-end (AFE). Use Value: Low V_CE(sat) (≤0.3 V) and tight h_FE distribution minimize offset drift and improve linearity over temperature.
Digital Logic Level Translation	Discrete Switch-Mode Driver
Use Scenario: Interfacing 1.8 V or 3.3 V microcontroller GPIOs to 5 V or 12 V peripheral control lines in embedded systems. IC Role / Device Role / Timing Role: Active-low NPN inverter with base resistor network and collector pull-up to higher rail. Use Value: Fast t_on/t_off (<30 ns/<250 ns) and guaranteed h_FE ≥ 75 ensure reliable level-shifting up to 3 MHz clock rates.	Use Scenario: Driving LEDs, relays, or small solenoids in industrial HMI panels and programmable logic controllers (PLCs). IC Role / Device Role / Timing Role: Saturated-switch configured NPN with base current limiting and flyback diode protection. Use Value: 100 mA I_C rating and 0.3 V_CE(sat) enable efficient 5 V/12 V loads with minimal heat generation on standard FR-5 PCB.

Portable Audio Preamp

Sensor Signal Conditioning

Use Scenario: Amplifying low-level microphone or piezoelectric sensor outputs in battery-powered wearables and IoT edge nodes.

IC Role / Device Role / Timing Role: NPN common-emitter small-signal amplifier with DC-coupled input and emitter-degenerated bias network.

Use Value: 1.0 dB noise figure at 1 kHz and 75–225 h_FE ensure high SNR and stable gain without trimming components.

Use Scenario: Converting weak analog signals from thermistors, strain gauges, or photodiodes into robust voltage levels for ADC input.

IC Role / Device Role / Timing Role: Discrete transimpedance or voltage follower stage in multi-stage analog front-end (AFE).

Use Value: Low V_CE(sat) (≤0.3 V) and tight h_FE distribution minimize offset drift and improve linearity over temperature.

Digital Logic Level Translation

Discrete Switch-Mode Driver

Use Scenario: Interfacing 1.8 V or 3.3 V microcontroller GPIOs to 5 V or 12 V peripheral control lines in embedded systems.

IC Role / Device Role / Timing Role: Active-low NPN inverter with base resistor network and collector pull-up to higher rail.

Use Value: Fast t_on/t_off (<30 ns/<250 ns) and guaranteed h_FE ≥ 75 ensure reliable level-shifting up to 3 MHz clock rates.

Use Scenario: Driving LEDs, relays, or small solenoids in industrial HMI panels and programmable logic controllers (PLCs).

IC Role / Device Role / Timing Role: Saturated-switch configured NPN with base current limiting and flyback diode protection.

Use Value: 100 mA I_C rating and 0.3 V_CE(sat) enable efficient 5 V/12 V loads with minimal heat generation on standard FR-5 PCB.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPS3904	Same SOT-23 package; h_FE = 100–300 at I_C = 1.0 mA; V_CEO = 40 V; slightly higher f_T (~300 MHz)	Higher gain spread may require tighter bias resistor tolerances; preferred where maximum small-signal gain is prioritized	Select MPS3904 when designing for higher open-loop gain or wider bandwidth; verify layout compatibility with identical pinout (Style 6).
BC846B	SOT-23 package; h_FE = 200–450 at I_C = 10 mA; V_CEO = 65 V; lower V_CE(sat) (0.25 V typ)	Higher voltage rating and tighter h_FE binning support more aggressive saturation switching and higher-rail interfaces	Choose BC846B for 24 V industrial control or where tighter h_FE tolerance reduces calibration burden; confirm same pin assignment (Base-Emitter-Collector).

Compared with MMBT3416LT3, MPS3904 offers higher typical f_T and broader h_FE range for wideband amplification, while BC846B provides superior voltage margin and lower saturation loss for higher-voltage switching - both share identical SOT-23 Style 6 pinout but differ in gain consistency and thermal derating behavior.

Availability

MMBT3416LT3 is available at Aetrix Electronics and suitable for portable audio preamps, sensor signal conditioning circuits, and digital logic level translation requiring stable component supply, consistent h_FE distribution, and RoHS-compliant packaging.

Supply support for MMBT3416LT3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The MMBT3416LT3 belongs to onsemi's general-purpose bipolar transistor family designed for cost-sensitive, high-reliability linear amplification and switching in consumer, computing, and industrial equipment.

FAQ

What is the maximum operating temperature for the MMBT3416LT3?

The MMBT3416LT3 has a specified junction and storage temperature range of −55°C to +150°C. Its thermal resistance R_JA is 556°C/W on FR-5 board, so sustained operation above +125°C ambient requires derating per the 1.8 mW/°C curve. The MMBT3416LT3 remains functional within full spec limits up to TJ = +150°C, verified by onsemi's thermal response data and SOA curves.

Does the MMBT3416LT3 support low-noise audio applications?

Yes - the MMBT3416LT3 delivers a noise figure of 1.0 dB at 1 kHz with I_C = 1.0 mA and R_S = 1 kΩ, and exhibits low noise voltage (en ≈ 3.0 nV/√Hz) and noise current (in ≈ 10 pA/√Hz). These values are measured and published in the official onsemi datasheet, making the MMBT3416LT3 suitable for microphone preamps and other low-level analog signal paths where SNR is critical.

Is the MMBT3416LT3 pin-compatible with the MPS3904?

Yes - both MMBT3416LT3 and MPS3904 use SOT-23 package Style 6 (Base–Emitter–Collector on pins 1–2–3), confirmed by onsemi's mechanical drawings and marking diagrams. No PCB layout changes are needed for substitution, though h_FE and f_T differences may require minor bias adjustment in precision gain stages.

What is the guaranteed minimum h_FE for the MMBT3416LT3 at 25°C?

The MMBT3416LT3 guarantees h_FE ≥ 75 at I_C = 2.0 mA and V_CE = 4.5 V, per the Electrical Characteristics table in the official onsemi datasheet (Rev. 5, October 2024). This minimum is tested and binned during production, ensuring predictable DC bias stability across manufacturing lots and temperature extremes.

Can the MMBT3416LT3 be used in switching applications?

Yes - the MMBT3416LT3 is characterized for switching with t_on < 30 ns and t_off < 250 ns at I_C/I_B = 10, and supports saturated operation with V_CE(sat) ≤ 0.3 V at I_C = 50 mA/I_B = 3.0 mA. Its safe operating area (SOA) curve confirms reliability up to 100 mA and 40 V in pulsed mode, making the MMBT3416LT3 viable for low-power digital interface and LED driver circuits.

MMBT3416LT3 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: -

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: -

Current - Collector (Ic) (Max):: -

Voltage - Collector Emitter Breakdown (Max):: -

Vce Saturation (Max) @ Ib, Ic:: -

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: -

Power - Max:: -

Frequency - Transition:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

MMBT3416LT3 FAQ

1.How can I place an order for MMBT3416LT3 through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT3416LT3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT3416LT3 reliable?

The price and inventory of MMBT3416LT3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT3416LT3 is usually 5 days.

3.What payment methods are accepted for MMBT3416LT3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT3416LT3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT3416LT3?

MMBT3416LT3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT3416LT3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT3416LT3?

For technical support, including MMBT3416LT3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT3416LT3 requirements.

6.How does Aetrix verify that MMBT3416LT3 is sourced from the original manufacturer or authorized distributors?

All MMBT3416LT3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT3416LT3 meets industry standards.

7.What is the process for return or replacement of MMBT3416LT3?

All MMBT3416LT3 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT3416LT3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT3416LT3 part is unused and in its original packaging.

Return procedure for MMBT3416LT3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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