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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi MMBT3640_D87Z

Name: MMBT3640_D87Z
Brand: onsemi
SKU: MMBT3640_D87Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: MMBT3640_D87Z

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: MMBT3640_D87Z.pdf

Description:: TRANS PNP 12V 0.2A SOT-23-3

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Product details

Overview

MMBT3640_D87Z from ON Semiconductor is a PNP bipolar junction transistor designed for high-speed saturated switching at up to 100 mA collector current, with −12 V V_CEO, −0.20 V V_CE(sat) at I_C = −10 mA/I_B = −1.0 mA, and 500 MHz f_T. It operates across −55°C to +150°C and is used in low-voltage logic interface and pulse generation circuits.

For engineers reviewing the MMBT3640_D87Z datasheet, pinout, applications, or equivalent options, key selection criteria include its SOT-23 package compatibility, guaranteed V_BE(sat) ≤ −1.00 V, fast turn-on/off times (t_on = 25 ns, t_off = 35 ns), and thermal resistance of 556°C/W on FR-4 PCB.

Technical Context

The MMBT3640_D87Z is a silicon PNP BJT fabricated in Fairchild's Process 65, optimized for saturated switching rather than linear amplification. Its design emphasizes low storage time (t_s = 20 ns) and minimal saturation voltage under defined drive conditions.

It supports DC and pulsed operation with validated performance at T_A = 25°C and extended reliability up to 65°C ambient. All absolute maximum ratings-including −12 V V_CEO, −200 mA I_C, and 225 mW P_D-are specified with derating above 25°C at 1.8 mW/°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−12 V: Maximum safe collector-emitter reverse bias before breakdown; defines usable supply headroom in PNP switch configurations.
I_C (Continuous)	−200 mA: Absolute max DC collector current; actual switching use limited to −100 mA per device description for reliable high-speed operation.
V_CE(sat)	−0.20 V at I_C = −10 mA / I_B = −1.0 mA: Confirmed low saturation voltage ensures minimal power loss and voltage drop in active-low switch stages.
f_T	500 MHz: Current gain–bandwidth product confirms suitability for RF-coupled switching and sub-100 ns digital signal paths.
t_off	35 ns at V_CC = −6 V, I_C = −50 mA: Verified turn-off delay enables >10 MHz square-wave switching without significant duty cycle distortion.
R_θJA	556°C/W: Thermal resistance on standard FR-4 board; requires careful layout or derating above 25°C ambient for sustained 200 mA operation.

Pinout & Package

SOT-23 (TO-236AB) 3-lead surface-mount package with gull-wing leads; marking "2J" on top surface. Device orientation follows JEDEC standard: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector (viewed from top, notch left).

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current source terminal for PNP operation	Connected to higher potential rail; must be routed with low-inductance path for fast switching integrity.
2 (Base)	Control input for forward-biased junction	Requires negative base drive relative to emitter; typical I_B = −1.0 mA for full saturation at I_C = −10 mA.
3 (Collector)	Current sink terminal	Connected to load and ground reference; voltage swing limited by V_CEO = −12 V rating.

Key Features

Feature	Design Value
High-speed switching	Verified t_on/t_off ≤ 60/75 ns at low V_CC, enabling clean edge transitions in 5–10 MHz clocked logic interfaces.
Low V_CE(sat)	−0.20 V at nominal drive ensures <10 mW conduction loss at 10 mA, critical for battery-powered level-shifting circuits.
Guaranteed f_T	500 MHz minimum allows stable operation in RF-coupled gate drivers and broadband pulse conditioning networks.
Robust thermal rating	Junction temperature range −55°C to +150°C supports deployment in automotive under-hood and industrial control environments.

Applications

Logic Level Translation	Pulse Width Modulation Driver
Use Scenario: Converting 3.3 V CMOS output to drive a 5 V TTL-compatible input in mixed-voltage microcontroller systems. IC Role / Device Role / Timing Role: PNP switch configured as active-low level shifter with emitter tied to 5 V, collector driving TTL input. Use Value: Delivers <100 ns propagation delay and <0.2 V output low voltage, meeting TTL VIH/VIL thresholds without external pull-ups.	Use Scenario: Driving gate of N-channel MOSFET in low-side PWM motor control stage using microcontroller GPIO. IC Role / Device Role / Timing Role: Fast-switching PNP buffer isolating MCU from MOSFET gate capacitance and providing strong sink current during turn-off. Use Value: Achieves 35 ns turn-off time and −0.20 V saturation, minimizing MOSFET cross-conduction risk at 20 kHz PWM frequency.
Digital Signal Inversion	Low-Voltage Sensor Interface
Use Scenario: Inverting open-drain sensor output (e.g., Hall effect switch) to active-high logic signal for FPGA input. IC Role / Device Role / Timing Role: Saturated PNP inverter with collector pull-up to 2.5 V rail; emitter grounded. Use Value: Provides rail-to-rail inversion with <50 ns delay and guaranteed VOH ≥ 2.4 V, compatible with LVCMOS25 inputs.	Use Scenario: Amplifying and conditioning weak analog pulses from photodiode-based smoke detector front-end. IC Role / Device Role / Timing Role: High-gain PNP preamplifier stage operating in common-emitter configuration with fixed bias. Use Value: Delivers h_FE ≥ 30 at I_C = −10 mA, supporting >40 dB small-signal gain while maintaining 500 MHz bandwidth for transient pulse fidelity.

Logic Level Translation

Pulse Width Modulation Driver

Use Scenario: Converting 3.3 V CMOS output to drive a 5 V TTL-compatible input in mixed-voltage microcontroller systems.

IC Role / Device Role / Timing Role: PNP switch configured as active-low level shifter with emitter tied to 5 V, collector driving TTL input.

Use Value: Delivers <100 ns propagation delay and <0.2 V output low voltage, meeting TTL VIH/VIL thresholds without external pull-ups.

Use Scenario: Driving gate of N-channel MOSFET in low-side PWM motor control stage using microcontroller GPIO.

IC Role / Device Role / Timing Role: Fast-switching PNP buffer isolating MCU from MOSFET gate capacitance and providing strong sink current during turn-off.

Use Value: Achieves 35 ns turn-off time and −0.20 V saturation, minimizing MOSFET cross-conduction risk at 20 kHz PWM frequency.

Digital Signal Inversion

Low-Voltage Sensor Interface

Use Scenario: Inverting open-drain sensor output (e.g., Hall effect switch) to active-high logic signal for FPGA input.

IC Role / Device Role / Timing Role: Saturated PNP inverter with collector pull-up to 2.5 V rail; emitter grounded.

Use Value: Provides rail-to-rail inversion with <50 ns delay and guaranteed VOH ≥ 2.4 V, compatible with LVCMOS25 inputs.

Use Scenario: Amplifying and conditioning weak analog pulses from photodiode-based smoke detector front-end.

IC Role / Device Role / Timing Role: High-gain PNP preamplifier stage operating in common-emitter configuration with fixed bias.

Use Value: Delivers h_FE ≥ 30 at I_C = −10 mA, supporting >40 dB small-signal gain while maintaining 500 MHz bandwidth for transient pulse fidelity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT3906LT1G	Lower f_T (250 MHz vs. 500 MHz); higher V_CE(sat) (−0.4 V min at same I_C/I_B)	Less suitable for >5 MHz switching; acceptable for general-purpose logic inversion below 1 MHz.	Select when cost sensitivity outweighs speed requirement and layout space permits minor thermal margin reduction.
DXT3640P5-7	Same die, SOT-523 package (smaller footprint, higher R_θJA = 625°C/W); identical electrical specs.	Enables ultra-compact designs but requires tighter thermal management at >50 mA continuous current.	Choose for space-constrained portable devices where board area savings justify additional thermal analysis.

Compared with MMBT3640_D87Z, MMBT3906LT1G trades speed and saturation performance for broader availability and lower unit cost, while DXT3640P5-7 retains identical electrical behavior in a smaller package with higher thermal resistance-requiring layout-level thermal mitigation for equivalent power handling.

Availability

MMBT3640_D87Z is available at Aetrix Electronics and suitable for logic level translation, PWM motor control, and digital signal inversion requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for MMBT3640_D87Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and logic solutions for automotive, industrial, and consumer markets.

The MMBT3640_D87Z belongs to ON Semiconductor's legacy Fairchild BJT portfolio, engineered for high-speed saturated switching in compact, cost-sensitive digital interface and pulse-generation applications.

FAQ

What is the maximum continuous collector current rating for MMBT3640_D87Z?

The MMBT3640_D87Z has an absolute maximum continuous collector current (I_C) of −200 mA at T_A = 25°C. However, the device description specifies optimal high-speed switching performance up to −100 mA. Derating is required above 25°C ambient per the 1.8 mW/°C thermal coefficient, and pulsed operation beyond steady-state limits requires consultation with ON Semiconductor.

Does MMBT3640_D87Z support operation at elevated temperatures like 105°C ambient?

Yes, the MMBT3640_D87Z is rated for junction temperatures up to +150°C and storage from −55°C to +150°C. At 105°C ambient, its usable power dissipation drops to approximately 81 mW (225 mW − (105 − 25) × 1.8 mW), limiting continuous I_C to roughly −90 mA assuming −0.25 V V_CE(sat); design validation under actual thermal conditions is required.

What is the guaranteed minimum current gain (h_FE) for MMBT3640_D87Z at typical operating conditions?

The MMBT3640_D87Z guarantees h_FE ≥ 30 at I_C = −10 mA and V_CE = −0.3 V, and ≥ 20 at I_C = −50 mA and V_CE = −1.0 V. These values are measured at T_A = 25°C; h_FE decreases with rising temperature and higher collector current, and must be verified per application.

Can MMBT3640_D87Z be used as a linear amplifier, or is it strictly for switching?

The MMBT3640_D87Z is characterized and optimized for saturated switching applications, with published parameters focused on V_CE(sat), switching times, and f_T. While it can operate linearly, no small-signal parameters (e.g., r_π, g_m) or linearity specs are provided in the datasheet, and its Process 65 fabrication targets switching-not analog fidelity-so linear use is not recommended without full characterization.

Is the SOT-23 package of MMBT3640_D87Z compatible with standard reflow profiles for lead-free assembly?

Yes, the SOT-23 package used by MMBT3640_D87Z complies with JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and supports standard lead-free reflow profiles (peak 260°C). The device is qualified for IPC/JEDEC standards, and no special baking or handling is required prior to assembly unless exposed to ambient >60% RH for >168 hours.

MMBT3640_D87Z Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 200 mA

Voltage - Collector Emitter Breakdown (Max):: 12 V

Vce Saturation (Max) @ Ib, Ic:: 600mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 10nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 30 @ 10mA, 300mV

Power - Max:: 225 mW

Frequency - Transition:: 500MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

MMBT3640_D87Z FAQ

1.How can I place an order for MMBT3640_D87Z through Aetrix?

Please submit a Request for Quotation (RFQ) for MMBT3640_D87Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for MMBT3640_D87Z reliable?

The price and inventory of MMBT3640_D87Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT3640_D87Z is usually 5 days.

3.What payment methods are accepted for MMBT3640_D87Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT3640_D87Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for MMBT3640_D87Z?

MMBT3640_D87Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your MMBT3640_D87Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for MMBT3640_D87Z?

For technical support, including MMBT3640_D87Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT3640_D87Z requirements.

6.How does Aetrix verify that MMBT3640_D87Z is sourced from the original manufacturer or authorized distributors?

All MMBT3640_D87Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT3640_D87Z meets industry standards.

7.What is the process for return or replacement of MMBT3640_D87Z?

All MMBT3640_D87Z units undergo pre-shipment inspection (PSI). If there is an issue with MMBT3640_D87Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The MMBT3640_D87Z part is unused and in its original packaging.

Return procedure for MMBT3640_D87Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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