Diodes Incorporated MMBT3904-13
- Part No.:
- MMBT3904-13
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
MMBT3904-13.pdf
- Description:
- TRANS NPN 40V 0.2A SOT-23-3
- Quantity:
- Payment:

- Shipping:

Inventory:7,169
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Product details
Overview
MMBT3904-13 from Diodes Incorporated is an NPN small-signal surface-mount transistor in SOT-23 package, rated for 40 V VCEO, 200 mA IC, and 350 mW PD. It delivers hFE = 100–300 at IC = 10–100 mA and fT = 300 MHz, serving as a general-purpose amplifier and switch in low-voltage logic interfaces and sensor signal conditioning circuits.
For engineers reviewing the MMBT3904-13 datasheet, MMBT3904-13 pinout, MMBT3904-13 application, or MMBT3904-13 equivalent, key selection criteria include verified VCEO/IC derating at +125°C, hFE consistency across IC = 1–50 mA, switching timing (tr/tf ≤ 35/50 ns), and SOT-23 thermal resistance (RJA = 357 K/W) under PCB-defined copper area conditions.
Technical Context
This epitaxial planar NPN transistor operates in active, saturation, and cutoff regions with defined DC gain curves (hFE = 40–300 across IC = 0.1–100 mA at VCE = 1 V) and small-signal parameters including hfe = 100–400 and fT = 300 MHz at VCE = 20 V, IC = 10 mA. Its breakdown ratings-V(BR)CEO = 40 V, V(BR)CBO = 60 V, V(BR)EBO = 5.0 V-are validated per pulse test (300 µs, 2% duty).
Switching behavior is characterized by td = 35 ns, tr = 35 ns, ts = 200 ns, and tf = 50 ns under VCC = 3.0 V, IC = 10 mA, and matched base drive (IB1 = IB2 = 1.0 mA), supporting medium-speed digital logic interfacing and PWM-driven LED bias control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 40 V - Maximum collector-emitter voltage before avalanche in common-emitter configuration; defines safe operating range in 3.3 V/5 V logic-level switching. |
| IC (cont.) | 200 mA - Continuous collector current limit at TA = 25°C; derates to ~120 mA at TA = 85°C per RJA = 357 K/W. |
| hFE | 100–300 - DC current gain at IC = 10–100 mA, VCE = 1 V; enables predictable base drive sizing for saturation in switching designs. |
| fT | 300 MHz - Transition frequency at VCE = 20 V, IC = 10 mA; supports amplification up to ~100 MHz with usable gain margin. |
| tr/tf | 35/50 ns - Rise/fall times under specified 3 V switching conditions; suitable for ≤3 MHz square-wave applications with minimal overshoot. |
| RJA | 357 K/W - Junction-to-ambient thermal resistance on standard FR-4 with minimal copper; requires thermal relief design for >100 mA continuous operation. |
Pinout & Package
Package: SOT-23 - Surface-mount plastic case with gull-wing leads, 0.008 g mass, compliant with MIL-STD-202 solderability requirements. Marking codes include K1N, R1A, or 1AM.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current sink terminal in common-emitter configuration | Connected to ground or low-impedance return path; sets reference for VBE bias and emitter degeneration stability. |
| 2 (Base) | Control input for minority-carrier injection | Receives current-limited drive (e.g., via 10 kΩ resistor); VBE(SAT) = 0.65–0.95 V defines required forward bias headroom. |
| 3 (Collector) | Current source terminal in common-emitter configuration | Connected to load (e.g., LED anode or logic gate input); VCE(SAT) ≤ 0.3 V at IC/IB = 10 ensures low conduction loss. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary PNP pairing | MMBT3906 available with matched VCEO, hFE, and switching specs for push-pull output stages. |
| Epitaxial planar die construction | Enables tight parameter distribution (e.g., hFE binning) and stable fT across temperature (-55°C to +150°C). |
| Low VCE(SAT) | ≤0.3 V at IC = 50 mA, IB = 5 mA - reduces power loss in saturated-switch applications like level translation. |
| High fT / low Cobo | 300 MHz fT with 4.0 pF Cobo - supports RF preamp use up to 50 MHz without external neutralization. |
Applications
| Logic-Level Signal Switching | Sensor Interface Amplification |
|---|---|
Use Scenario: Driving 5 V TTL inputs or enabling/disabling pull-up networks in microcontroller GPIO expansion. IC Role / Device Role: NPN switch operating in saturation/cutoff with base driven by 3.3 V MCU output through current-limiting resistor. Use Value: VCE(SAT) ≤ 0.3 V ensures <10 mW dissipation at 20 mA load, minimizing self-heating during sustained ON states. | Use Scenario: Amplifying low-amplitude analog signals from thermistors or photodiodes before ADC sampling. IC Role / Device Role: Common-emitter small-signal amplifier biased at IC = 1 mA, VCE = 5 V for linearity and noise performance. Use Value: NF = 5.0 dB at IC = 100 µA and RS = 1 kΩ enables sub-10 µV input-referred noise in precision front-ends. |
| PWM-Controlled LED Bias | Level Translation (3.3 V ↔ 5 V) |
Use Scenario: Modulating current through high-brightness LEDs using 1–10 kHz PWM from an embedded controller. IC Role / Device Role: Fast-switching NPN current sink with tr/tf ≤ 35/50 ns and ts = 200 ns to minimize duty-cycle distortion. Use Value: Consistent ts ensures accurate PWM edge timing across temperature, critical for color-mixing accuracy in RGB LED systems. | Use Scenario: Interfacing 3.3 V FPGA I/O to legacy 5 V peripheral buses requiring unidirectional voltage shift. IC Role / Device Role: Single-transistor level shifter with emitter follower or common-emitter topology depending on directionality. Use Value: hFE ≥ 100 at IC = 1 mA guarantees reliable turn-on with weak 3.3 V drive, eliminating need for external bias resistors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN small-signal transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847BW,115 | VCEO = 45 V, hFE = 200–450 (IC = 10 mA), RJA = 300 K/W | Higher hFE spread and lower thermal resistance enable tighter base drive control in low-power amplifiers. | Select when higher DC gain consistency or improved thermal performance is required at same SOT-23 footprint. |
| PN2222A-AP | VCEO = 40 V, IC = 600 mA, PD = 1 W, TO-92 package | Higher current/power rating but through-hole only; not drop-in compatible due to package mismatch. | Choose only if board redesign allows TO-92 mounting and >200 mA peak current is needed. |
Compared with BC847BW and PN2222A-AP, the MMBT3904-13 offers optimal balance of SOT-23 manufacturability, 200 mA capability, and 300 MHz fT for space-constrained digital and analog signal paths where thermal budget is moderate and lead-free reflow compatibility is mandatory.
Availability
MMBT3904-13 is available at Aetrix Electronics and suitable for logic-level signal switching, sensor interface amplification, and PWM-controlled LED bias applications requiring stable component supply and full RoHS compliance.
Supply support for MMBT3904-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, cost-optimized components for consumer, industrial, and computing markets.
The MMBT3904-13 belongs to Diodes' broad portfolio of small-signal transistors designed for high-volume, space-sensitive applications including portable electronics, IoT sensor nodes, and automotive body-control modules.
FAQ
What is the maximum allowable junction temperature for MMBT3904-13?
The absolute maximum junction temperature is +150°C, with storage temperature also rated from –55°C to +150°C. Operation above +125°C requires derating IC and PD based on RJA = 357 K/W and actual PCB copper area; no internal thermal shutdown is provided.
Can MMBT3904-13 be used in linear amplifier configurations?
Yes-it supports Class-A small-signal amplification with verified hfe = 100–400 and NF = 5.0 dB at IC = 100 µA. Stable biasing requires emitter degeneration and VCE ≥ 1 V to avoid Early effect distortion; fT = 300 MHz permits bandwidth up to ~50 MHz with gain ≤10.
Is MMBT3904-13 pin-compatible with other SOT-23 NPN transistors?
Yes-its pinout (Emitter-Base-Collector on pins 1-2-3) conforms to JEDEC standard SOT-23 layout. However, electrical parameters (e.g., hFE, VCE(SAT), fT) differ across manufacturers; direct substitution requires verification against target circuit's gain, speed, and thermal requirements.
Does MMBT3904-13 have qualified AEC-Q101 automotive grade variants?
No-the standard MMBT3904-13 is not AEC-Q101 qualified. Diodes Incorporated offers the MMBT3904Q-13 as the automotive-grade version, featuring extended temperature testing (–40°C to +125°C), enhanced process controls, and PPAP documentation for automotive applications.
MMBT3904-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 200 mA
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 1V
- Power - Max:
- 310 mW
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
MMBT3904-13 FAQ
1.How can I place an order for MMBT3904-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for MMBT3904-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for MMBT3904-13 reliable?
The price and inventory of MMBT3904-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for MMBT3904-13 is usually 5 days.
3.What payment methods are accepted for MMBT3904-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for MMBT3904-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for MMBT3904-13?
MMBT3904-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your MMBT3904-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for MMBT3904-13?
For technical support, including MMBT3904-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your MMBT3904-13 requirements.
6.How does Aetrix verify that MMBT3904-13 is sourced from the original manufacturer or authorized distributors?
All MMBT3904-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that MMBT3904-13 meets industry standards.
7.What is the process for return or replacement of MMBT3904-13?
All MMBT3904-13 units undergo pre-shipment inspection (PSI). If there is an issue with MMBT3904-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The MMBT3904-13 part is unused and in its original packaging.
Return procedure for MMBT3904-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
MMBT3904-13 Tags

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Diodes Incorporated

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Diodes Incorporated

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Micro Commercial Co

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Diodes Incorporated

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Nexperia USA Inc.

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